A5084990171- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Magnetic and transport properties of perovskites and related materials
- Physics of Superconductivity and Magnetism
- Heusler alloys: electronic and magnetic properties
- Iron-based superconductors research
- Thermal properties of materials
- Rare-earth and actinide compounds
- Advanced Condensed Matter Physics
- Thermal Expansion and Ionic Conductivity
- Semiconductor materials and interfaces
- Thermal Radiation and Cooling Technologies
- Superconductivity in MgB2 and Alloys
- Topological Materials and Phenomena
- Magnetic Properties of Alloys
- Intermetallics and Advanced Alloy Properties
- Magnetic properties of thin films
- Magnetic Properties and Applications
- Quantum Dots Synthesis And Properties
- Superconducting Materials and Applications
- Advanced Thermodynamics and Statistical Mechanics
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
- MXene and MAX Phase Materials
- Multiferroics and related materials
Council of Scientific and Industrial Research
2016-2025
Academy of Scientific and Innovative Research
2015-2025
CSIR National Physical Laboratory of India
2009-2023
Saha Institute of Nuclear Physics
2020
International Iberian Nanotechnology Laboratory
2019
Indian Institute of Technology Bhubaneswar
2019
National Physical Laboratory
2006-2017
National Institute of Solar Energy
2017
Delhi Technological University
2015
University of Delhi
2015
Single-phase cool white-light emitting BaNb<sub>2</sub>O<sub>6</sub>:Dy<sup>3+</sup> phosphors have been synthesized and their structural, luminescence colorimetric properties investigated in detail.
Modern-day applications demand onboard electricity generation that can be achieved using piezoelectric phenomena. Reducing the dimensionality of materials is a pathway to enhancing properties. Transition-metal dichalcogenides have been shown exhibit high piezoelectricity. Monolayer MoS2 possesses strong piezoelectricity otherwise negligible in its bulk form. The presence sulfur vacancy defects two-dimensional starkly reduce output due enhanced charge screening. Oxygen passivation offers...
A very recent report on the observation of superconductivity in Bi(4)O(4)S(3) [Mizuguchi, Y.; http://arxiv.org/abs/1207.3145] could potentially reignite search for a broad range layered sulfides. We here synthesis at 500 °C by vacuum encapsulation technique and its basic characterizations. The as-synthesized was contaminated with small amounts Bi(2)S(3) Bi impurities. majority phase found to be tetragonal (space group I4/mmm) lattice parameters = 3.9697(2) Å c 41.3520(1) Å. Both AC DC...
In the past decade, significant efforts have been made to develop efficient half-Heusler (HH) based thermoelectric (TE) materials. However, their practical applications remain limited due various challenges occurring during fabrication of TE devices, particularly development stable contacts with low interfacial resistance. this study, we an effort explore a contact material resistance for n-type TiCoSb-based material, specifically Ti0.85Nb0.15CoSb0.96Bi0.04 as proof concept, using...
A substantial enhancement in <italic>ZT</italic> ∼ 1.2 at 900 °C has been realized p-type nanostructured Si<sub>80</sub>Ge<sub>20</sub> alloys by creating nano-to-meso scale defect features.
Despite Hf-free half-Heusler (HH) alloys being currently explored as an important class of cost-effective thermoelectric materials for power generation, owing to their thermal stability coupled with high cost Hf, figure-of-merit (ZT) still remains far below unity. We report a state-of-the-art ∼ 1 at 873 K in n-type V-doped Zr1–xVxNiSn HH alloy, synthesized employing arc-melting followed by spark plasma sintering. The efficacy V dopant on the Zr-site is evidenced enhanced properties realized...
ZrCoSb based half-Heusler (HH) alloys have been widely studied as a p-type thermoelectric (TE) material for power generation applications in the mid-temperature regime. However, their intrinsically high thermal conductivity has found to be detrimental improvement figure-of-merit (ZT), which presently is far below unity. In current work, state-of-the-art ZT ∼1.1 at 873 K was realized an optimized composition of nanostructured Zr1-xHfxCoSb0.9Sn0.1 HH by employing compositional modulation i.e....
Compositional tailoring enables fine-tuning of thermoelectric (TE) transport parameters by synergistic modulation electronic and vibrational properties. In the present work, aspects compositionally tailored defects have been explored in ZrNiSn-based half-Heusler (HH) TE materials to achieve high performance cost effectiveness n-type Hf-free HH alloys. off-stoichiometric Ni-rich ZrNi1+xSn alloys a low Ni doping limit (x < 0.1), excess induces (Ni/vacancy antisite + interstitials), which tend...
Defect engineering of thermoelectric (TE) materials enables the alteration their crystal lattice by creating an atomic-scale disorder, which can facilitate a synergistic modulation electrical and phonon transport, leading to enhancement TE properties. This work employs compositional nonstoichiometry strategy for manipulation Ni-vacancies Ni-interstitials through Ni-deficient Ni-excess compositions (Zr, Hf)Ni1±xSn-based half-Heusler (HH) alloys realize state-of-the-art figure-of-merit (ZT)...
ZrNiSn-based half-Heusler (HH) alloys are well-established for n-type mid-temperature thermoelectric applications because of their chemical and thermal stability narrow band gap driven semiconducting behavior. Here, we observed a high figure merit, ZT ∼ 1, at 873 K in aliovalent Nb-doped composition Zr1–xNbxNiSn (x = 0–0.035) x 0.03 HH alloy prepared by employing combination arc-melting spark plasma sintering. The merit is attributed to synergistic enhancement the power factor with...
We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing conventional fusion method followed by spark plasma sintering. Their properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value figure-of-merit as compared to Cu3SbSe3, which is primarily due electrical conductivity. The compatibility factor was found be ∼1.2 0.2 V−1 for at 550 K. results mechanical these two compounds their microhardness fracture toughness...
Intrinsically ultra-low thermal conductivity and electrical transport in single-phase Cu<sub>2</sub>SbSe<sub>3</sub> synthesized employing a solid state reaction spark plasma sintering.
Electronic band structure and partial density of states for <italic>Cmcm</italic> phase SnSe.
The full-Heusler (FH) inclusions in the half-Heusler (HH) matrix is a well-studied approach to reduce lattice thermal conductivity of ZrNiSn HH alloy. However, excess Ni may lead situ formation FH and/or alloys with interstitial defects. develops intermediate electronic states band gap and also generates defects scatter phonons, thus providing additional control tailor phonon transport properties synergistically. In this work, we present implication isoelectronic Ge-doping on thermoelectric...
We report the experimental and theoretical study on magnetic nature of Bi3Ni system. The structure is found to be orthorhombic (Pnma) with lattice parameters a = 8.879{\AA} b 4.0998{\AA} c 4.099{\AA}. title compound synthesized via solid state reaction route by quartz vacuum encapsulation 5N purity stoichiometric ingredients Ni Bi. superconducting transition temperature 4.1 K as confirmed from magnetization specific heat measurements. lower critical field (Hc1) irreversibility (Hirr) are...
The enhancement of thermoelectric figure-of-merit with SiC dispersion in SiGe nanostructured alloy.