A5048195350- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Neural Networks and Reservoir Computing
- Gas Sensing Nanomaterials and Sensors
- Silicon Nanostructures and Photoluminescence
- Diamond and Carbon-based Materials Research
- Semiconductor Lasers and Optical Devices
- Quantum Information and Cryptography
- Transition Metal Oxide Nanomaterials
- Analytical Chemistry and Sensors
- Spectroscopy and Laser Applications
- Gold and Silver Nanoparticles Synthesis and Applications
- Space Satellite Systems and Control
- Fluid Dynamics and Thin Films
- Bluetooth and Wireless Communication Technologies
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Ga2O3 and related materials
- Theoretical and Computational Physics
- Photonic Crystals and Applications
- Solid State Laser Technologies
- Plasmonic and Surface Plasmon Research
- Thermal properties of materials
- Nanowire Synthesis and Applications
- Copper-based nanomaterials and applications
Bauman Moscow State Technical University
2020-2024
All Russia Research Institute of Automatics
2020-2024
Herzen University
2007-2008
St. Petersburg State Technological Institute
2006
Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for state-of-the-art single-photon sources still underdeveloped. Here, we report labs-scale process optimization optical characterization of tunable applications. We demonstrate lowest propagation losses...
Abstract Silicon nitride (Si 3 N 4 ) photonic integrated circuits (PICs) are of great interest due to their extremely low propagation loss and higher integration capabilities. The number applications based on the silicon photonics platform continues grow, including Internet Things (IoT), artificial intelligence (AI), light detection ranging (LiDAR), hybrid neuromorphic quantum computing. It's potential for CMOS compatibility, as well advances in heterogeneous with silicon‐on‐insulator,...
In recent years, we have been witnessing the intensive development of optical gas sensors. Thin palladium and platinum films as well tungsten trioxide with or catalysts are widely used for hydrogen detection, constants these materials required sensor development. We report parameters retrieved from a set ellipsometric transmission spectra electron-beam evaporated palladium, platinum, films. The were 81 nm, 162 515 nm thick metal thin 5-7 nm. Ultrathin shown to be successfully described by...
At the present time, ultrahigh performance superconducting nanowire single-photon detectors are key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning material properties is powerful resource for fabricating with desired properties. Here, we report on major theoretical relations between ultrathin niobium nitride (NbN) film detector characteristics, as well dependence NbN reactive magnetron sputtering recipes. Based this study,...
Silver and gold are the most commonly used materials in optics plasmonics. has lowest optical losses visible near-infrared wavelength range, but it faces a serious problem—degradation over time. It been repeatedly reported that properties of silver thin films rapidly degrade when exposed to atmosphere. This phenomenon was described by various mechanisms: rapid oxidation, sorption sulfur or oxygen, formation compounds with chlorine, sulfur, oxygen. In this work, we systematically studied...
We present tunable photonic integrated circuits platform with low losses in a wide wavelength bandwidth from 900 to 1550 nm based on Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> waveguides.
Recently, silicon nitride (Si3N4) photonic integrated circuits (PICs) are of a great interest due to their extremely low waveguides losses. The number Si3N4 photonics platform applications is constantly growing including the Internet Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR) devices, hybrid neuromorphic quantum computing. Their heterogeneous integration with III-V leads new advanced large scale PICs thousands elements. Here, we review key trends in...
Photonic integrated circuits (PICs) play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To fully harness their benefits, an efficient coupling mechanism is required to successfully launch light into waveguides from fibers. This study introduces low-loss strategies implementation for silicon nitride platform. Here we present overview...
A new SNSPD topology is proposed, in which, according to the simulation results, least current crowding effect observed, which makes it most preferable for creation of an with a high quantum efficiency and low dark count rate.
Nowadays ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning material properties is powerful resource for fabricating with desired properties. Here, we report on major theoretical relations between ultrathin niobium nitride (NbN) films characteristics, as well NbN dependence reactive magnetron sputtering recipes. Based this study formulate exact...
In this work we present developed silicon nitride high confinement thermally- and E/O tuned platform, that shows propagation losses lower than 0.05 dB/cm for 1550 nm wavelength 0.30 935 wavelength. This results are achieved by material properties optimization scattering on roughness stitching errors minimization. We also show here nanophotonic devices fabricated basing technology, automatic fiber coupling wire bonding.
In this work, we show possible ways and give guidelines for silicon nitride photonic integrated circuits fabrication process optimization, suitable near-IR telecom bandwidth. Most attention is focused on minimization of scattering losses originating from e-beam lithography dry etching nitride.
We report nitrogen plasma modification of the ZnS: Cu, Br electroluminescence phosphor. Modification resulted in 30% improvement Al EL brightness at 220V drive. In same time emission peak shifted from 486 to 504nm due increase relative intensity green band spectrum. Thus treatment is a perspective method for control and spectra ZnS phosphors.
Abstract— Second harmonic generation (SHG) in ZnS‐based materials is reported. ZnS, ZnS:Cu, Br, and Al, Br samples were studied. Phosphor powders subjected to 30‐mJ pulses from YAG:Nd infrared laser. The wavelength of the generated green emission was 532 nm, exactly one‐half that incident laser light (1064 nm). However, non‐linear dependence intensity on pump observed only for powder. It concluded aluminum co‐doping crucial properties.
Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for state-of-the-art single-photon sources still underdeveloped. Here, we report labs-scale process optimization optical characterization of tunable applications. We demonstrate lowest propagation losses...