Safa Kasap

ORCID: 0000-0002-2392-3954
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About
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Research Areas
  • Phase-change materials and chalcogenides
  • Glass properties and applications
  • Luminescence Properties of Advanced Materials
  • Advanced Semiconductor Detectors and Materials
  • Chalcogenide Semiconductor Thin Films
  • Radiation Detection and Scintillator Technologies
  • Thin-Film Transistor Technologies
  • Digital Radiography and Breast Imaging
  • Advanced X-ray and CT Imaging
  • Transition Metal Oxide Nanomaterials
  • Solid-state spectroscopy and crystallography
  • Nonlinear Optical Materials Studies
  • Semiconductor materials and devices
  • Material Dynamics and Properties
  • CCD and CMOS Imaging Sensors
  • Nuclear materials and radiation effects
  • Photorefractive and Nonlinear Optics
  • Silicon Nanostructures and Photoluminescence
  • Ga2O3 and related materials
  • Liquid Crystal Research Advancements
  • Gas Sensing Nanomaterials and Sensors
  • Photonic and Optical Devices
  • Silicon and Solar Cell Technologies
  • Quantum Dots Synthesis And Properties
  • Advanced Memory and Neural Computing

University of Saskatchewan
2015-2024

Cisco Systems (United States)
2020

Saskatoon Medical Imaging
2017

Victoria University of Wellington
2011

Health Sciences Centre
2004

University of Toronto
2004

Sunnybrook Health Science Centre
2004

University of Miyazaki
2003

Imperial College London
1985-1999

Bulgarian Academy of Sciences
1997

The x-ray sensitivity of a high-resistivity photoconductor sandwiched between two parallel plate electrodes and operating under constant field is analysed by considering charge carrier generation that follows the photon absorption profile taking into account both electron hole trapping phenomena but neglecting recombination, bulk space diffusion effects. amount collected in external circuit due to distributed electrons holes through detector calculated integrating Hecht collection efficiency...

10.1088/0022-3727/33/21/326 article EN Journal of Physics D Applied Physics 2000-10-17

Advances in active-matrix array flat panels for displays over the last decade have led to development of flat-panel X-ray image detectors. Recent detectors shown quality exceeding that film/screen cassettes. They can also permit instantaneous capture, readout, and display digital images and, hence, enable clinical transition radiography. There are two general approaches panel detector technology: 1) direct 2) indirect conversion. The present paper outlines operating principles...

10.1109/jproc.2002.1002529 article EN Proceedings of the IEEE 2002-04-01

Abstract We describe the progress in science and technology of stabilized a‐Se from its early use xerography xeroradiography to present commercial modern flat panel X‐ray imagers ultrasensitive video tubes which utilize impact ionization drifting holes. Both electrons holes can drift a‐Se, is a distinct advantage since photogeneration charge carriers occurs throughout bulk photoconductive layer. An photoconductor has be operated at high fields ensure that efficiency sufficiently large...

10.1002/pssb.200982007 article EN physica status solidi (b) 2009-07-07

Unlike other major medical imaging methods, such as computed tomography, ultrasound, nuclear medicine and magnetic resonance imaging—all of which are digital—conventional x-ray remains a largely analog technology. Making the transition from to digital could bring several advantages imaging: Contrast aspects image quality be improved by means processing; radiological images compared more easily with those obtained modalities; electronic distribution within hospitals would make remote access...

10.1063/1.881994 article EN Physics Today 1997-11-01

10.1023/a:1008993813689 article EN Journal of Materials Science Materials in Electronics 2000-01-01

The measurement of spatially resolved high doses in microbeam radiation therapy has always been a challenging task, where combination dose response and spatial resolution (microns) is required for synchrotron peaked around 50 keV. x-ray induced Sm3+ → Sm2+ valence conversion doped fluorophosphates glasses tested use dosimetry therapy. efficiency depends almost linearly on the irradiation up to ∼5 Gy saturates at exceeding ∼80 Gy. shows strong correlation with absorbance glass which related...

10.1063/1.3633102 article EN Applied Physics Letters 2011-09-19

There is a special need to develop dosimetry technique with large‐dynamic range and high‐spatial resolution characterize the microstructured X‐ray beams used in microbeam radiation therapy ( MRT ) for cancer. We report synthesis characterization of oxyfluoride glass‐ceramic (SiO 2 –Al O 3 –CaF –CaO–SmF plates, which contain trivalent‐samarium‐doped calcium fluoride (CaF :Sm 3+ nanocrystals, use as dosimetric detector material, particularly applications. Our approach utilizes extent Sm →Sm 2+...

10.1111/jace.12938 article EN Journal of the American Ceramic Society 2014-04-16

A generalized expression for charge carrier transport and absorption-limited sensitivity of x-ray photoconductors is derived by analytically solving the continuity equation both holes electrons considering drift in presence deep traps. The normalized applied to stabilized a-Se HgI2. In latter case, model fitted published data determine electron hole ranges (6.4×10−6 cm2/V 7×10−8 cm2/V, respectively) screen-printed polycrystalline

10.1063/1.1454213 article EN Applied Physics Letters 2002-03-04

Abstract Alloys of sulfur, selenium and tellurium, often referred to as chalcogenide semiconductors, offer a highly versatile, compositionally-controllable material platform for variety passive active photonic applications. They are optically nonlinear, photoconductive materials with wide transmission windows that present various high- low-index dielectric, low-epsilon plasmonic properties across ultra-violet, visible infrared frequencies, in addition an, non-volatile, electrically/optically...

10.1088/2515-7647/ac9a91 article EN cc-by Journal of Physics Photonics 2022-10-14

Electron time-of-flight transient photocurrents have been investigated in stabilized a-Se as a function of electric field, annealing, aging (relaxation), and alloying with As doping Cl. The distribution localized states (DOS) has by comparing the measured calculated photocurrents. samples were prepared conventional vacuum deposition techniques. theoretical analysis multiple-trapping transport done discretization continuous DOS use Laplace transform formalism. resulting distinct features: A...

10.1063/1.1835560 article EN Journal of Applied Physics 2005-01-13

The review of avalanche multiplication experiments clearly confirms the existence impact ionization effect in this class semiconductors. semilogarithmic plot coefficient (α) versus reciprocal field (1∕F) for holes a-Se and electrons a-Si:H places phenomena amorphous semiconductors at much higher fields than those typically reported crystalline with comparable bandgaps. Furthermore, contrast to well established concepts semiconductors, increases increasing temperature. McKenzie Burt [S. M. G....

10.1063/1.1763986 article EN Journal of Applied Physics 2004-08-02
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