A5100389522- Advanced Surface Polishing Techniques
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Force Microscopy Techniques and Applications
- Advanced materials and composites
- Advanced ceramic materials synthesis
- MXene and MAX Phase Materials
- Semiconductor materials and devices
- Advanced machining processes and optimization
- Microstructure and mechanical properties
- Tribology and Wear Analysis
- Electronic and Structural Properties of Oxides
- Nanowire Synthesis and Applications
- Lubricants and Their Additives
- Integrated Circuits and Semiconductor Failure Analysis
- Chalcogenide Semiconductor Thin Films
- Aluminum Alloys Composites Properties
- Graphene research and applications
- Quantum Dots Synthesis And Properties
- Carbon Nanotubes in Composites
- Boron and Carbon Nanomaterials Research
- Advanced Semiconductor Detectors and Materials
- Advanced Photocatalysis Techniques
- Electrocatalysts for Energy Conversion
- Surface and Thin Film Phenomena
Dalian University of Technology
2016-2025
Guizhou University
2022-2025
Ningxia University
2025
Level (Czechia)
2025
Hainan University
2022-2024
Hangzhou Dianzi University
2024
Beijing University of Posts and Telecommunications
2023-2024
Changchun University of Chinese Medicine
2024
Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute
2024
Changchun Institute of Applied Chemistry
2024
Novel 3D Ni 1− x Co Se 2 mesoporous nanosheet networks with tunable stoichiometry are successfully synthesized on foam (Ni MNSN/NF ranging from 0 to 0.35). The collective effects of special morphological design and electronic structure engineering enable the integrated electrocatalyst have very high activity for hydrogen evolution reaction (HER) excellent stability in a wide pH range. 0.89 0.11 is revealed exhibit an overpotential (η 10 ) 85 mV at −10 mA cm −2 alkaline medium (pH 14) η 52...
Nanostructures in silicon (Si) induced by phase transformations have been investigated during the past 50 years. Performances of nanostructures are improved compared to that bulk counterparts. Nevertheless, confinement and loading conditions insufficient machine fabricate high-performance devices. As a consequence, fabricated nanoscale deformation at speeds m/s not demonstrated yet. In this study, grinding or scratching speed 40.2 was performed on custom-made setup an especially designed...
Abstract With the development of electronic devices such as integrated circuits toward continual increase in power density and consumption, efficient heat dissipation low thermal expansion materials become one most important issue. However, conventional polymers have problem poor performance, which hinder application for devices. In this work, two-dimensional material, MXene (Ti 3 C 2 ), is used reinforcement additive to optimize properties polymers. We reported preparation multilayer Ti by...
Toxic and corrosive solutions are widely used in the preparation of abrasives chemical mechanical polishing (CMP) sapphire wafers, resulting potential environmental pollution.
Silicon (Si) dominates the integrated circuit (IC), semiconductor, and microelectronic industries. However, it is a challenge to achieve sub-angstrom surface of Si. Chemical mechanical polishing (CMP) widely used in manufacturing Si, while toxic polluted slurries are usually employed CMP, resulting pollution environment. In this study, novel environmentally friendly CMP was developed, which slurry composed ceria, hydrogen peroxide, sodium pyrophosphate, carboxymethyl cellulose, carbonate,...
Chemical mechanical polishing (CMP) is widely used to achieve an atomic surface globally, yet its cross-scale mechanisms are elusive.
Highly aligned SnO2 nanorods on graphene 3-D array structures were synthesized by a straightforward nanocrystal-seeds-directing hydrothermal method. The diameter and density of the grown can be easily tuned as required varying seeding concentration temperature. used gas sensors exhibit improved sensing performances to series gases in comparison that nanorod flowers. For arrays optimal distribution, these proved exert an enhanced sensitivity reductive (especially H2S), which was twice high...
In this study, a novel approach of high speed scratching is carried out on silicon (Si) wafers at nanoscale depths cut to investigate the fundamental mechanisms in wafering solar cells. The conducted Si wafer 150 mm diameter with an ultraprecision grinder 8.4 15 m/s. Single-point diamonds tip radius 174, 324, and 786 nm, respectively, are used study. study finds that onset chip formation, amorphous layer formed topmost residual scratch, followed by pristine crystalline lattice beneath. This...