The temperature dependence of the thermo-optic coefficient for crystalline silicon has been measured in range between room and 550 K at wavelength 1523 nm by means an interferometric technique. This technique, which requires a very simple experimental setup, is based on observation fringe pattern produced changes Fabry–Perot resonator. Measurement results indicate that independent sample doping crystal plane orientation. data appear to be agreement with few values reported date this...

A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence of the difference between forward voltages appearing two biased at different constant currents, in a range from 30 °C up to 300 °C, was used for sensing. high sensitivity 5.11 mV/°C measured. This is, best our knowledge, first experimental result about proportional-to-absolute-temperature made with SiC diodes, showing both good degree linearity and long-term stability performance.

Indoor positioning is an emerging technology with wide applications. Augmented and mixed reality need accurate real-time of user's limbs or direction sight in real time, reference points within the environment. Positioning also required for mall navigation, elderly people movements monitoring, many others contexts. mobile units (MUs) can be provided by multilateration techniques that compute location MU starting from distance measurements between a set beacons. In this paper, nonlinear...

The thermo-optic coefficient ∂n/∂T has been measured from room temperature to 600 K at the wavelength of 1523 nm in three important semiconductors for fiber-optic device fabrication, namely, InP, GaAs, and 6H–SiC. adopted technique is very simple based on observation periodicity signal transmitted, desired wavelength, by an étalon made material under test, when it experiences a variation. values InP GaAs are agreement with previously reported ones, but increase weak quadratic dependence. SiC...

The temperature dependence of the thermo-optic coefficients lithium niobate has been measured in range between 320 and 515 K for both wavelengths 632 1523 nm ordinary extraordinary refractive indices. experimental data, carried out by means a simple interferometric technique, have compared with two theoretical models that follow different approaches treating effect. results show good agreement ones.

Radio Frequency Energy harvesting is a research topic of increasing interest, related to sustainability, which could become promising alternative existing energy resources. The paper will show all the activities addressed design wideband system recover from electromagnetic sources present in environment. main idea develop battery-free wireless sensors able capture available into mentioned bandwidth. flnal goal realize self-powered Wireless Networks based on Ultra Lower Power | ULP minimizing...

Indoor positioning of objects and people is becoming great importance in the Internet Things (IoT), in-home automation, navigation malls, airports, or very large buildings. Positioning determined by multiple distance measurements between reference points sensors. Distance measurement uses time flight an ultrasonic signal traveling from emitter to receiving This requires close synchronization sensors a sharp resolution arrival (TOA) signal. Usually, TOA detected using cross-correlation...

In this work, we present a graphene-based photodetector specifically engineered to op-erate at wavelength of 1310 nm. The device leverages the SPARK effect, previously investigated only 1550 It features hybrid waveguide structure comprising hy-drogenated amorphous silicon, graphene, and crystalline silicon. Upon optical illumi-nation, defect states release charge carriers into graphene layer, modulating thermionic current across graphene/crystalline silicon Schottky junction. photo-detector...

The demand for faster and more efficient optical communication systems has driven significant advancements in integrated photonic technologies, with switches playing a pivotal role high-speed, low-latency data transmission. In this work, we introduce novel design an adiabatic switch based on the thermo-optic effect using silicon-on-insulator (SOI) technology. approach relies slow signal evolution, minimizing power dissipation addressing challenges of traditional switches. Machine learning...

In this work, we present a graphene-based photodetector operating at wavelength of 1310 nm. The device leverages the SPARK effect, which has previously been investigated only 1550 It features hybrid waveguide structure comprising hydrogenated amorphous silicon, graphene, and crystalline silicon. Upon optical illumination, defect states release charge carriers into graphene layer, modulating thermionic current across graphene/crystalline silicon Schottky junction. demonstrates peak...

The thermo-optic coefficient (dn/dT) of crystalline silicon has been critically analyzed in the temperature range 300–600 K, at fiber optic communication wavelength 1.5 μm. dependence attributed to variation interband transition energies some critical points band structure. experimental data have fitted using single and double oscillator models. In particular, model, which is physically correlated structure, exploited extrapolate (critical points) combined density states. extracted...

Waveguides and interferometric light amplitude modulators for application at the 1.3- 1.55-/spl mu/m fiber communication wavelengths have been fabricated with thin-film hydrogenated amorphous silicon its related alloys. The technique adopted growth is plasma- enhanced chemical vapor deposition, which has shown to give lowest defect concentration in film. Consequently proposed waveguiding structures take advantage of low optical absorption by a-Si:H photon energies below energy gap. In...

The linear dependence on temperature of the voltage drop V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> across a forward-biased 4H-SiC p-i-n diode is investigated experimentally. results show that fabricated sensor has high degree linearity in range from room up to 573 K corresponding root-mean-square error lower than 0.5%. A maximum sensitivity 2.66 mV/K was calculated. low saturation current diode, well below forward biasing also at...

The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature range from T = 85 up to 443 K is presented. linear dependence on forward voltage drop, different bias currents, investigated through an analytical study temperature-dependent physical parameters. A high sensitivity 1.18 mV/K was observed constant current I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> 80 μA. device exhibits good degree linearity with...

Indoor localization and tracking of persons assets with centimeter-level accuracy for inventory, security, medical monitoring, training, as well gesture interfaces domotics, is highly desirable in the framework emerging IoT paradigm. Low cost, tiny, battery, or batteryless operated position sensors are required. 3-D can be computed by combining three more distance measurements between sensor reference points. Our aim to give capability measuring from a point radio frequency identification...

Silicon photonics is a new emerging and disruptive technology aimed at using cost-effective silicon-based materials for the generation, control, detection of modulated light signals optical communication. Hydrogenated amorphous silicon (a-Si:H) particularly promising platform enabling desired matching between electronics on-chip photonics. Thin a-Si:H layers can be in fact deposited CMOS-compatible low-temperature plasma-enhanced chemical vapor deposition technique, with no impact all on...

The forward current-voltage characteristics (IF-VF) of aluminum (Al)-implanted 4H-SiC p-i-n diodes are investigated by means a numerical simulation study that takes into account both intrinsic and doping-induced deep defects, namely, the Z1/2 EH6/7 centers inside drift region an electrically active trap concentration anode due to Al <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ion implantation process. From experimental results,...

Silicon carbide (SiC) power MOSFETs are available only for high-power and medium-to-high-voltage applications, generally above 600 V, because lower blocking voltages, they comparatively provide advantages in terms of efficiency. There applications,however, which ruggedness reliability as important efficiency, such optimizers photovoltaic (PV) modules, fall within the low power, voltage category dc-dc converters. These circuits, maximize energy produced by each single PV module, operate...

The current–voltage characteristics of Al/Ti/4H-SiC Schottky barrier diodes have been investigated in the 85–445 K temperature range by means a combined numerical and analytical simulation study. Simulation results showed good agreement with measurements whole explored current from 10 μA to mA. main device electrical parameters, namely height (BH) ideality factor, were found be strongly temperature-dependent. In particular, factor decreases while BH increases increasing temperature. observed...