A5089763009- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Spectroscopy and Laser Applications
- Terahertz technology and applications
- Genetic diversity and population structure
- Topological Materials and Phenomena
- Evolution and Paleontology Studies
- Genomics and Phylogenetic Studies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Radiation Effects in Electronics
- Random lasers and scattering media
Leibniz Association
2024
Universität Hamburg
2024
Leibniz Institute for the Analysis of Biodiversity Change
2023-2024
Institute for Physics of Microstructures
2018-2020
N. I. Lobachevsky State University of Nizhny Novgorod
2018-2020
Phylogenetic tree reconstruction with molecular data is important in many fields of life science research. The gold standard this discipline the phylogenetic based on Maximum Likelihood method. In study, we present neural networks to predict best model sequence evolution and correct topology for four alignments nucleotide or amino acid data. We trained different architectures using simulated a wide range evolutionary models, parameters branch lengths. By comparing accuracy prediction...
Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/HgCdTe quantum well (QW) heterostructures are studied in 5–20 µm wavelength range regard to long‐wavelength lasing applications. The authors obtain carrier lifetimes using time‐resolved photoconductivity measurements show that the dominating mechanism of recombination changes radiative process non‐radiative one as bandgap is decreased, limiting “operating” temperature for SE. suggest decreasing QW width should reverse...
Abstract Phylogenetic tree reconstruction with molecular data is important in many fields of life science research. The gold standard this discipline the phylogenetic based on Maximum Likelihood method. In study, we explored utility neural networks to predict correct model sequence evolution and topology for four alignments. We trained different architectures using simulated nucleotide amino acid alignments a wide range evolutionary models, parameters branch lengths. By comparing accuracy...
Stimulated emission (SE) at wavelengths up to 24 μm (12.5 THz) and down 2.8 is demonstrated from HgCdTe quantum well (QW) heterostructures. Non-radiative Auger recombination show be mitigated due relativistic energy spectrum. Pump-probe carrier lifetime measurements that further increase in SE wavelength feasible 60 (5 THz). In the short range temperatures available with Peltier coolers.
AbstractWe report on the stimulated emission obtained in wavelength range of 20.3–17.4 μm interband transitions at T = 8–50 K HgCdTe quantum wells placed a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with are interesting for designing long-wavelength lasers operating 25–60 μm, which is not covered by currently available cascade lasers. It shown that maximum temperature determined position lateral maxima dispersion dependences first valence subband well....
Stimulated emission (SE) at wavelengths up to 20.3 μm (14.7 THz) is demonstrated from HgCdTe based quantum well heterostructures. The mitigation of Auger processes resulting «graphene-like» energy spectrum in structures under study exemplified. By studying the carrier lifetime via time resolved photoconductivity and transmission pump-probe measurements we show that further increase SE wavelength feasible discuss promising routes towards 5 – 15 THz frequency domain, where cascade lasers are...
AbstractStimulated emission from a heterostructure with Hg_0 . 903Cd_0 097Te/Cd_0 7Hg_0 3Te quantum wells, placed in waveguide layer of wide-gap CdHgTe, is obtained at wavelengths 14–11 μm and temperatures 18–80 K. The threshold Auger recombination energy calculated for set heterostructures wells pure HgTe band gap 90 meV (wavelength 14 μm). possibility fabricating lasers operating working higher than that liquid nitrogen demonstrated.
В гетероструктурах с квантовыми ямами Hg(Cd)Te/CdHgTe в области длин волн 3-4 мкм выполнены исследования стимулированного излучения на межзонных переходах зависимости от длины волны накачки. Минимальное значение пороговой плотности мощности и максимальная температура, при которых удается получить стимулированное излучение, соответствуют энергиям кванта накачки вблизи ширины запрещенной зоны барьеров. структуре толщиной покровного слоя 150 нм непрерывной накачке температурах выше 200 K было...
Based on the results of measuring characteristics CMOS ICs in dose range up to 0.5 Mrad with an intensity 0.1 rad / s, changes concentration defects Nit, Not were calculated, and parameters SPICE models MOS transistors IC identified. Circuitry modeling made it possible estimate critical value for degradation studied ICs.