A5000787240- 2D Materials and Applications
- Perovskite Materials and Applications
- Graphene research and applications
- Electronic and Structural Properties of Oxides
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Plasmonic and Surface Plasmon Research
- Metamaterials and Metasurfaces Applications
- Neural Networks and Reservoir Computing
- Organic and Molecular Conductors Research
- Quantum, superfluid, helium dynamics
- Environmental Monitoring and Data Management
- Atomic and Subatomic Physics Research
- Radiation Detection and Scintillator Technologies
- Optical and Acousto-Optic Technologies
- Gas Sensing Nanomaterials and Sensors
- Advanced MEMS and NEMS Technologies
- Advanced Semiconductor Detectors and Materials
- Conducting polymers and applications
- Topological Materials and Phenomena
- Laser Design and Applications
- MXene and MAX Phase Materials
- Analytical Chemistry and Sensors
- Polydiacetylene-based materials and applications
- Luminescence Properties of Advanced Materials
Harvard University
2018-2024
Institute for Information Recording
1991-1993
Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables formation excitons holes distinct layers, producing interlayer with large binding energy a long lifetime. Employing heterostructures monolayer TMDs, we realize optical electrical generation long-lived neutral charged excitons. We...
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, excitons extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications coupling circularly polarized light to selective valley spin$^{1-4}$. atomically thin MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructures, the unique...
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments long lifetimes, allowing their spatial distribution be tuned on demand. Here, we employ electrostatic gates trap IEs control density. By electrically modulating the IE Stark shift, electron-hole pair...
Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization programmable, active with fast, tunable components is among outstanding challenges in field. Here, we experimentally demonstrate a few-pixel beam steering based electrostatic gate control excitons an atomically thin semiconductor strong light-matter interactions. By combining high reflectivity MoSe2 monolayer graphene split-gate geometry, shape...
The optical and electronic properties of van der Waals (vdW) heterostructures depend strongly on the atomic stacking order constituent layers. This is exemplified by periodic variation local registry, known as moire patterns, giving rise to superconductivity ferromagnetism in twisted bilayer graphene novel exciton states transition metal dichalcogenides (TMD) heterobilayers. However, presence nanometer-scale superlattices typically deduced indirectly, because conventional imaging techniques,...
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, excitons extremely inefficient optical emitters. Large spin-orbit coupling in transition metal dichalcogenides (TMDs) couples circularly polarized light to with selective valley spin. Here, we demonstrate electrically controlled brightening of spin-triplet interlayer a MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructure. The atomic registry...
Abstract Transition metal dichalcogenide (TMD) semiconductor heterostructures are actively explored as a new platform for quantum optoelectronic systems. Most state of the art devices make use insulating hexagonal boron nitride (hBN) that acts wide-bandgap dielectric encapsulating layer also provides an atomically smooth and clean interface is paramount proper device operation. We report observation large, through-hBN photocurrents generated upon optical excitation hBN encapsulated MoSe 2...
Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization programmable, active with fast, tunable components is among outstanding challenges in field. Here, we experimentally demonstrate a few-pixel beam steering based electrostatic gate control excitons an atomically thin semiconductor strong light-matter interactions. By combining high reflectivity MoSe2 monolayer graphene split-gate geometry, shape...
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments long lifetimes, allowing their spatial distribution be tuned on demand. Here, we employ electrostatic gates trap IEs control density. By electrically modulating the IE Stark shift, electron-hole pair...
The possibility of data recording in alkaline-earth phosphors doped with rare-earth ions is demonstrated. results experimental studies optical, electronic, and structural properties SrS CaS sulfides activated by Eu (Ce) Sm are reported.
This paper discusses, for the first time, possibility of application new recording medium with effect photoluminescence. Optimization parameters four-layer were held purpose effective use energy and read-out radiation getting maximum signal-to-noise ratio.
Photoluminescent (PL) spectra of SnO<SUB>2</SUB>, In<SUB>2</SUB>O<SUB>3</SUB>, Y<SUB>2</SUB>O<SUB>3</SUB>, Yb<SUB>2</SUB>O<SUB>3</SUB>, CaO oxides and their mixtures, doped with rare-earth ions have been studied. The possibility use for electroluminescent (EL) displays was considered. It is shown, that under Ar laser excitation the luminescence one can get display color range from green to red. PL Eu<SUP>3+</SUP> are characterized by substantially greater set emission lines than...