Ziye Zhu

ORCID: 0000-0002-2758-9615
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About
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Research Areas
  • 2D Materials and Applications
  • Electronic and Structural Properties of Oxides
  • Multiferroics and related materials
  • Ferroelectric and Piezoelectric Materials
  • Perovskite Materials and Applications
  • Heusler alloys: electronic and magnetic properties
  • MXene and MAX Phase Materials
  • Advanced Condensed Matter Physics
  • ZnO doping and properties
  • Acoustic Wave Resonator Technologies
  • Photorefractive and Nonlinear Optics
  • Topological Materials and Phenomena
  • Copper-based nanomaterials and applications
  • Advanced Photocatalysis Techniques
  • Material Science and Thermodynamics
  • Graphene research and applications
  • Advanced Sensor and Energy Harvesting Materials
  • Chalcogenide Semiconductor Thin Films
  • Spectroscopy and Laser Applications
  • Physics of Superconductivity and Magnetism
  • Ga2O3 and related materials
  • Advanced Thermoelectric Materials and Devices
  • Organic and Molecular Conductors Research
  • Advanced Nanomaterials in Catalysis
  • Crystal Structures and Properties

University of Science and Technology of China
2012-2025

Eastern Institute of Technology
2025

Westlake University
2020-2025

Zhejiang University
2022-2024

Hubei University of Automotive Technology
2018-2022

Jiangsu University
2022

Jiangsu Normal University
2019-2020

Xuzhou University of Technology
2020

State Council of the People's Republic of China
2020

Northwestern Polytechnical University
2016

Magnetoelectric coupling is crucial for uncovering fundamental phenomena and advancing technologies in high-density data storage energy-efficient devices. The emergence of altermagnets, which unify the advantages ferromagnets antiferromagnets, offers unprecedented opportunities magnetoelectric coupling. However, electrically tuning altermagnets remains an outstanding challenge. Here, we demonstrate how this challenge can be overcome by using antiferroelectricity ferroelectricity to modulate...

10.1103/physrevlett.134.106801 article EN Physical Review Letters 2025-03-13

On account of the high theoretical capacity and preferable electrochemical reversibility, tin selenides have emerged as potential anode materials in field sodium ion batteries (SIBs). Unfortunately, large volume changes, low electrical conductivity, shuttling effect polyselenides impeded their real application. In this work, we present a spatially confined reaction approach for controllable fabrication SnSe spheres, which are embedded polydopamine (PDA)-derived N, Se dual-doped carbon...

10.1021/acsami.1c22817 article EN ACS Applied Materials & Interfaces 2022-01-13

High-mobility layered semiconductors have the potential to enable next-generation electronics and computing. This paper demonstrates that ultrahigh electron mobility observed in semiconductor Bi2O2Se originates from an incipient ferroelectric transition endows material with a robust protection against degradation by Coulomb scattering. Based on first-principles calculations of electron-phonon interaction ionized impurity scattering, it is shown can reach 104 106 cm2 V-1 s-1 over wide range...

10.1021/jacs.1c12681 article EN Journal of the American Chemical Society 2022-03-02

Phase engineering by strain in 2D semiconductors is of great importance for a variety applications. Here, study the strain-induced ferroelectric (FE) transition bismuth oxyselenide (Bi2 O2 Se) films, high-performance (HP) semiconductor next-generation electronics, presented. Bi2 Se not FE at ambient pressure. At loading force ≳400 nN, piezoelectric responses exhibit butterfly loops magnitude and 180° phase switching. By carefully ruling out extrinsic factors, these features are attributed to...

10.1002/adma.202300450 article EN Advanced Materials 2023-03-04

Van der Waals (vdWs) materials are promising candidates for hetero-integration with silicon photonics toward miniaturization and integration. VdWs like molybdenum telluride black phosphorus, despite being prominent, exhibit air sensitivity, their room temperature emissions can be significantly broadened by tens of meV. Here, a self-encapsulation strategy is developed to scalably synthesize robust 2D vdWs ErOCl sub-meV narrow at the telecom C-band. Diverse rare earth also grown via chemical...

10.1002/adma.202404698 article EN Advanced Materials 2025-01-15

Two-dimensional (2D) materials with giant nonlinear optical (NLO) responses are essential for the development of advanced on-chip NLO devices. Using first-principles calculations, we predict a remarkable strain-induced enhancement second-harmonic generation (SHG) in high-performance 2D semiconductors Bi$_2$O$_2$X (X = S, Se, Te). The SHG susceptibilities under strain on order 1~nm/V, rivalling highest values reported among materials. This response originates from gauge-invariant geometric...

10.48550/arxiv.2501.16741 preprint EN arXiv (Cornell University) 2025-01-28

Strain-regulated ferroelectric (FE) materials have long attracted significant attention due to their diverse applications. While soft-phonon theory and the (pseudo) Jahn-Teller effect achieved considerable success in providing phenomenological descriptions general understanding, detailed connection between these perspectives microscopic dependence on strain regulation remains unclear. Here, under framework of density-functional perturbation (DFPT), we demonstrate that Berry curvature...

10.48550/arxiv.2502.01463 preprint EN arXiv (Cornell University) 2025-02-03

We discover that a large family of [Pb2F2]- and [Bi2O2]-based mixed-anion materials with litharge-type structural unit are highly polarizable layered semiconductors in proximity to strain-induced ferroelectricity. First-principles calculations demonstrate this materials, compounds as diverse PbFBr, BiOCl, BiCuOSe, Bi2OS2, Bi5O4S3Cl exhibit static dielectric constants an order magnitude higher than typical semiconductors. Additionally, they undergo ferroelectric transition when subjected few...

10.1021/acs.nanolett.5c00569 article EN Nano Letters 2025-02-27

Valleytronics, utilizing the valley degree of freedom in electrons, has potential for advancing next-generation nonvolatile storage. However, practical implementation remains challenging due to limited control over valleytronic properties. Here, we propose ferroelectric HfCl2/Sc2CO2 van der Waals heterostructure as a platform overcome these limitations, enabling tunable and behaviors. Our findings show that electric polarization state Sc2CO2 monolayer governs electronic properties...

10.1063/5.0264472 article EN Applied Physics Letters 2025-03-01

One-dimensional (1D) van der Waals (vdW) heterostructures, formed between coaxial nanotubes of transition metal dichalcogenides (TMDCs), have emerged as a new area endeavor in nanoscience. A key to designing and engineering the properties such 1D vdW heterostructures lies on understanding band alignment heterostructures. However, how curvature, tube diameters, intertube coupling affect band-edge levels TMDC remains unknown. Here, through comprehensive first-principles calculations analyses,...

10.1038/s41524-023-01052-1 article EN cc-by npj Computational Materials 2023-05-31

We propose a van der Waals heterostructure CuInP2S6/germanene by combining two dimensional ferroelectric semiconductor CuInP2S6 with germanene. By density functional theory calculations, we find that the metal-semiconductor transition can be realized in controlling polarization direction. induces sublattice imbalance of germanene interface interaction and thus makes it become normal semiconductor. Then, opposite states lead to different band alignment finally determine its metallic or...

10.1063/1.5100240 article EN Applied Physics Letters 2019-06-03

Spin–orbit coupling in chiral materials can induce chirality-dependent spin splitting, enabling electrical manipulation of polarization. Here, we use first-principles calculations to investigate the electronic states one-dimensional (1D) semiconductor InSeI, which has two enantiomorphic configurations with left- and right-handedness. We find that opposite exist right-handed 1D InSeI significant splitting spin-momentum collinear locking. Although at conduction band minimum (CBM) valence...

10.1063/5.0164202 article EN Applied Physics Letters 2023-10-23

Topological phase transitions can be controlled by nonvolatile electric-fields through ferroelectric heterostructure engineering.

10.1039/d3tc04392d article EN Journal of Materials Chemistry C 2024-01-01

Despite being an oxide, the delafossite ${\mathrm{PdCoO}}_{2}$ has exceptionally high electrical conductivity that rivals those of most conductive elemental metals, enabling a multitude exotic transport phenomena. However, reasons behind its unusually remained elusive for decades. Using first-principles calculations and theoretical modeling, we reveal ultrahigh at room temperature originates from contributions both Fermi velocities weak electron-phonon coupling, which leads to coupling...

10.1103/physrevb.109.075110 article EN Physical review. B./Physical review. B 2024-02-06

Carbonaceous catalysts are potential alternatives to metal catalysts. Graphene has been paid much attention for its high surface area and light weight. Here, hydrogenated graphene prepared by a simple gamma ray irradiation of oxide aqueous suspension at room temperature. Transmission electron microscopic, element analysis, X-ray photoelectron spectroscopy, UV-Vis spectrophotometer studies verified the hydrogenation graphene. The as-prepared can be used as metal-free carbonaceous catalyst...

10.1088/1674-0068/25/03/335-338 article EN Chinese Journal of Chemical Physics 2012-06-01

In recent years, low-dimensional ferromagnetic semiconductors have attracted tremendous interest due to their great significance for both fundamental physics and device applications. this work, a one dimensional (1D) semiconductor $\mathrm{CrSb}{\mathrm{Se}}_{3}$ with high Curie temperature $({T}_{\mathrm{C}})$ sizable magnetic anisotropy is proposed based on the first-principle calculations theoretical model. Quasi-1D chain structure moderate cleavage energy of...

10.1103/physrevb.104.085429 article EN Physical review. B./Physical review. B 2021-08-25

Two-dimensional (2D) magnetic semiconductor materials with the electric-field-tunable spin polarization and carrier-transport anisotropy are of great significance for fundamental physics device application. Here we propose a general strategy to tune anisotropic effective mass in 2D A-type antiferromagnetic (AFM) bilayer system. We take AFM $\mathrm{CrSBr}$ (with intralayer ferromagnetic interlayer coupling) as an example confirm this design principle. Firstly, vertical electric field can...

10.1103/physrevapplied.18.064086 article EN Physical Review Applied 2022-12-28

Two-dimensional multiferroics have attracted tremendous attention due to their intriguing physics and promising applications. However, it has been a major challenge discover design two-dimensional multiferroic materials with large electric polarization strong magnetoelectric coupling. In this work, we propose strategy van der Waals heterostructure coupling by stacking transition metal phthalocyanine (TMPc) molecule ferroelectric monolayer In2Se3. By first-principles electronic structure...

10.1063/5.0012039 article EN publisher-specific-oa Applied Physics Letters 2020-08-24

The layered oxychalcogenide semiconductor ${\mathrm{Bi}}_{2}{\mathrm{O}}_{2}\mathrm{Se}$ (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattice constants, the perovskite oxide ${\mathrm{SrTiO}}_{3}$ (STO) has been demonstrated be an excellent substrate for wafer-scale growth atomically thin BOS films. However, structural electronic BOS/STO interface remain poorly understood. Here, through first-principles study, we reveal...

10.1103/physrevb.108.245304 article EN Physical review. B./Physical review. B 2023-12-20

We demonstrate that biaxially strained Bi 2 O Se holds unusual quadruple-well dipole orders, a two-step 90° ferroelectric switching and various types of spontaneous topological domain structures.

10.1039/d3tc04733d article EN Journal of Materials Chemistry C 2024-01-01

Abstract Monolayer semiconductors with unique mechanical responses are promising candidates for novel electromechanical applications. Here, through first-principles calculations, we discover that the monolayer β - <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:msub> <mml:mi>TeO</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:mrow> </mml:math> , a high-mobility p -type and environmentally stable 2D semiconductor, exhibits an unusual out-of-plane...

10.1088/1361-648x/ad4249 article EN Journal of Physics Condensed Matter 2024-04-23

Electric-controlled ferromagnetism could be realized in a two-dimensional ferroelectric heterostructure CuInP<sub>2</sub>S<sub>6</sub>/InSe through carrier confinement induced by electric polarization switching and the Stoner mechanism.

10.1039/d0tc04272b article EN Journal of Materials Chemistry C 2020-01-01

Abstract The α -Fe 2 O 3 nanoparticles were prepared via the alcohol solution combustion process of ferric nitrate. scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS). X-ray diffraction (XRD), and vibrating sample magnetometer (VSM) taken to characterize nanoparticles. average particle sizes as-prepared approximately 180 nm, their magnetic property was 0.42 emu·g −1 after measurement. different concentrations BSA solutions adsorption times investigated investigate...

10.1088/2053-1591/ac73e3 article EN cc-by Materials Research Express 2022-05-26
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