A5028969032- Aluminum Alloys Composites Properties
- Semiconductor materials and devices
- Graphene research and applications
- Advanced ceramic materials synthesis
- ZnO doping and properties
- Tribology and Wear Analysis
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
- Heat Transfer and Optimization
- Silicon Carbide Semiconductor Technologies
- Thermal Radiation and Cooling Technologies
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- 2D Materials and Applications
- Electron and X-Ray Spectroscopy Techniques
- Supercapacitor Materials and Fabrication
- Polymer crystallization and properties
- Additive Manufacturing and 3D Printing Technologies
- Boron and Carbon Nanomaterials Research
- Advanced Thermoelectric Materials and Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Nanostructures and Photoluminescence
- Metal and Thin Film Mechanics
- Advanced Machining and Optimization Techniques
- Topological Materials and Phenomena
University of Maryland, College Park
2018-2021
Leibniz-Institut für Verbundwerkstoffe GmbH
2000-2002
In this work, π-plasmon dispersion and plasmon-exciton coupling in single-crystal 1T-TiSe2 along the ΓM¯ direction were investigated by using momentum (q)-resolved electron energy loss spectroscopy (EELS), ω-q map. Both π plasmon at 7 eV + σ ∼19.7 observed EELS spectrum. Furthermore, exhibits an unexpected behavior that transitions from a square root of q dependence (q1/2) to quadratic (q2) with increasing values. A low excitation ∼2.3 was also observed, which can be attributed mode (or...
Chemical and structural features of (2¯01) β-Ga2O3 interfaces with SiO2 Al2O3 gate oxides formed by low pressure chemical vapor deposition (SiO2) atomic layer (Al2O3) were investigated analytical electron microscopy in order to identify that may explain electrical properties recently observed the same samples. Cross-sectional transmission at Ga2O3/SiO2 interface revealed nanoscale interfacial roughness increasing higher post-deposition annealing temperature. At Ga2O3/Al2O3 interface, a few...
We report a transmission electron microscopy (TEM) study of the impacts phosphorus and boron passivation processes at 4H-SiC/SiO2 interfaces. The chemical electronic structures these interfaces have been analyzed using high-resolution TEM spatially resolved energy-loss spectroscopy (EELS), uncovering range phenomena caused by presence B P within their respective boro- phosphosilicate glass (BSG/PSG) layers. process was observed to induce roughness SiC/PSG interface on order 100s nm. Within...
The gadolinium sesquioxide (Gd2O3) with its bandgap of ∼5.4 eV and high dielectric permittivity refractive index has been used widely in optics, magnetic resonance imaging, k dielectrics. Electron energy loss spectroscopy (EELS) reveals spectral features at 13.5 15 eV, which can be interpreted as surface volume plasmons, respectively. unusual exciton polariton, resonances associated excitonic onsets, was also observed ∼7.5 eV. Because the differences electronic structures between cubic...
The presence of intrinsic defects in topological crystalline insulator materials has been predicted to improve the thermoelectric figure-of-merit values literature. Performing atomic-resolved high angle annular dark field imaging, momentum-resolved electron energy loss spectroscopy, and spectroscopic diffraction, we observed those defects, including interstitial Se atoms vacancies, cause localized mirror symmetry breaking further result anisotropic π-plasmon dispersion along ΓX¯ ΓM¯...