A5005655859- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Ferroelectric and Piezoelectric Materials
- Microwave Dielectric Ceramics Synthesis
- Phase-change materials and chalcogenides
- Crystallography and molecular interactions
- Dielectric properties of ceramics
- Magnetic Properties and Applications
- Magnetic properties of thin films
- Chalcogenide Semiconductor Thin Films
- Photonic and Optical Devices
- Magnetic Properties of Alloys
- Quantum Dots Synthesis And Properties
- Dielectric materials and actuators
- Plasmonic and Surface Plasmon Research
- Semiconductor materials and devices
- Optical Coatings and Gratings
- Advanced Fiber Optic Sensors
- Semiconductor materials and interfaces
- Magnetic Properties and Synthesis of Ferrites
- Nonlinear Optical Materials Studies
- Electromagnetic wave absorption materials
- Photonic Crystals and Applications
- Semiconductor Lasers and Optical Devices
- Glass properties and applications
University of Science and Technology of China
2024-2025
Hefei National Center for Physical Sciences at Nanoscale
2024-2025
Chinese Academy of Sciences
2024
Zhejiang University
2018
National Taipei University of Technology
2017
Shaanxi University of Science and Technology
2013-2015
National Taiwan University
2003-2013
Ministry of Education of the People's Republic of China
2013
A flexible surface acoustic wave (SAW) strain sensor in the frequency range of 162–325 MHz was developed based on a single crystalline LiNbO3 thin film with dual resonance modes, namely, Rayleigh mode and thickness shear (TSM). This SAW could handle wide up to ±3500 με owing its excellent flexibility, which is nearly six times detecting bulk piezoelectric substrate sensors. The exhibited high sensitivity 193 Hz/με maximum hysteresis less than 1.5%. temperature coefficients frequency, for TSM...
Abstract For solar cells, interfacial chemical coordination, carrier transport, and energy alignment play critical roles in transport determine the final conversion efficiency. As an emerging technology, high‐efficiency Sb 2 (S,Se) 3 cells typically utilize cadmium sulfide (CdS) as electron layer. However, poor electrical contact between F‐doped SnO (FTO) substrate CdS presents a significant challenge to improving device performance. Here, ultrathin layer is introduced, fabricated via bath...
We report on experimental investigations of the growth Ge1-xSnx film with thickness above critical using Molecular Beam Epitaxy. A series films various Sn compositions up to 14% are deposited a Ge buffer layer for at low temperatures close melting point Sn. Analysis measurements shows that is defect free in XTEM image and distributed almost uniformly 9.3%. The composition higher than theoretically predicted cause energy band change from an indirect direct bandgap; thus, present investigation...
Antimony selenosulfide Sb 2 (S x Se 1− ) 3 is featured as a stable, environment‐friendly, and low‐cost light‐harvesting material with tunable bandgap in the range of 1.1–1.8 eV, satisfying requirement indoor photovoltaics (IPVs). Up to now, certified efficiency solar cell 1.45 eV has broken 10% under standard illumination (AM1.5G). However, this not suitable for IPVs terms spectral matching. Herein, first time, effect optical on photovoltaic performance devices AM1.5G light conditions...
The recording mechanism of Ge∕Au bilayer and its dynamic tests for write-once blue laser high density DVD (HD DVD) are investigated. It is found that Ge2Au3 phase nucleated between amorphous Ge crystalline Au layer after room temperature deposition. Crystallization interface at 170–190°C induced by the sites interface, structure further heated to 200–450°C. After heating above 320°C, crystallized segregated grain boundary. test results show this films can be applied 1×–2× HD DVD-R.
Ge ∕ Au bilayer thin films were fabricated by magnetron sputtering method, the temperature dependence of resistance from room to 500°C and concentration depth profiles are measured. From measurement, we found two phase change phenomena which occurred at 175 360°C. The element as-deposited recorded region indicate that Au–Ge alloy is initially formed Ge∕Au interface. dominant diffusion atom path layer layer. optimum simulated bit error rate value about 1.4×0−6 9.0mW under time high definition...
The Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">100-x</sub> Cu xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> thin films (x=50 at.%-69 at.%) were deposited on nature oxidized Si (100) wafer by dc co-sputtering of and targets. Microstructures was analyzed X-ray diffractometer. optical thermal properties measured from static test. It found that the as-deposited phase single supersaturated epsiv-Cu...
Fe/sub 3/O/sub 4/ powder was mixed with MgO and then sintered in an atmosphere of argon at various temperatures for 3 h to form Mg-doped ferrites. The effects the sintering temperature, microstructure, Mg content on magnetoresistance ferrites were investigated. X-ray diffraction chemical titration analysis Fe/sup 2+/ 3+/ ions indicate that nonstoichiometric phases 4+X/ MgFe/sub 2/O/sub 4-x/ coexisted sample. temperature dependence resistivity examined. A plot log /spl rho/ against T/sup...
50 nm Ag1−xSbx (x=10.8–25.5) thin films were prepared by magnetron sputtering. Thermal analysis shows that the phase change occurs around 250°C. The optical property show as-deposited Ag80.9Sb19.1 have high reflectivity of about 62%–73%. After heat treatment at 300°C, contrast film is 12.5%–17% for wavelengths between 400 and 800nm. Dynamic test using as memory layer write once disk, a carrier-to-noise ratio 45dB can be achieved λ=657nm, numerical aperture 0.65, linear velocity 3.5m∕s.
Abstract Suppression of charge recombination caused by unfavorable grain boundaries (GBs) in polycrystalline thin films is essential for improving the optoelectronic performance semiconductor devices. For emerging antimony selenide (Sb 2 Se 3 ) materials, unique quasi‐1D structure intensifies dependence GB properties on size and orientation, which also increases impact defects related to device performance. However, these characteristics pose significant challenges preparation films. In this...
Abstract A family of structure-dependent integration methods has been proposed by Gui et al . for time integration. Although it desirable numerical properties, such as unconditional stability, explicit formulation and second-order accuracy, some adverse a poor capability to capture structural nonlinearity, an overshoot in high frequency steady- state response weak instability the nonzero initial conditions. The causes these properties are explored. nonlinearity may originate from convergence...
A novel bio-sensing technique based on Brownian motion change with use of a micro-particle-tracking-velocimetry (micro-PT V) has been successfully developed to measure the antigen-antibody interactions. The rapid interaction between antigen, C-reactive protein (CRP), and nanobeads conjugated antibody, anti-CRP, enabled real-time detection CRP be easily carried out. During binding process CRP, mean value beads diameter increased so that velocity decreased increasing time. Moreover, higher...
The Fe3O4 powder was mixed with Co-ferrite then sintering in argon atmosphere at temperatures between 1000 °C and 1250 for 4 hours. Effects of the temperature, microstructure content on magnetoresistance sintered ferrite mixture were investigated. 0 mol% 32.28 mol%. It found that Co ions dispersed uniformly all samples by analysis element mapping scanning electron microscopy. maximum ratio room temperature is about 7.45% when 4.26 1200 °C. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)