Hydrogen interactions with imperfections in crystalline metals and semiconductors are reviewed. Emphasis is given to mechanistic experiments theoretical advances contributing predictive understanding. Important directions for future research discussed.

We present data on oxygen diffusivity in silicon for the temperature range 270–400 °C. The is determined from recovery kinetics of a stress induced dichroism 9-μm infrared absorption band. combine our well dispersed (i.e., crystals heat treated at 1350 °C 20 h), with Mikkelsen’s recent mass transport work higher to obtain diffusivity, D=0.17 exp (−2.54/kT), 330–1240 have also found that atomic hopping times can be as much 100 faster not received treatment.

Several new infrared absorption bands have been discovered in hydrogen passivated silicon doped with P, As, and Sb. The frequency shift upon substitution of D for H confirms the assignment these to donor-H complexes. Thermal annealing experiments, which both due complexes free carriers were measured, confirm that donor passivation is complex formation, yield stability Our results suggest bonded Si rather than directly.

We present Raman and infrared absorption data for ${\mathrm{Ba}}_{2}$${\mathrm{YCu}}_{3}$${\mathrm{O}}_{\mathrm{x}}$ with 7>x>6 several samples well-characterized oxygen content. Over this range the material has an oxygen-deficient tripled perovskite structure whose superconductivity properties depend critically on x. An orthorhombic-to-tetragonal transition occurs x\ensuremath{\approxeq}6.5. have examined both phases frequency \ensuremath{\omega}>400...

Hydrogen has a strong influence on the electrical properties of transparent conducting oxides where it can give rise to shallow donors and passivate deep compensating defects. We have carried out infrared absorption experiments H- D-doped β-Ga2O3 that involve temperature- polarization-dependent effects as well relative D-concentrations probe defect structures hydrogen form. The results analysis these data, coupled with detailed theoretical calculations, show dominant O-H vibrational line...

The annealing behavior of the free-carrier absorption, O-H vibrational and photoluminescence lines previously associated with H-related donors in ZnO has been studied. One set defects gives rise to local mode absorption at either 3326 or $3611\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$, relative intensities these depending on source starting material. These anneal away together 150 \ifmmode^\circ\else\textdegree\fi{}C along $\ensuremath{\sim}80%$ free carriers introduced by...

An O–H stretching line at 3326.3cm−1 was previously assigned to a shallow donor that is introduced into ZnO by H. This infrared has been found appear in as-grown samples when they are annealed near 400 °C without an external source of H, showing there H-containing defect commercially available not seen spectroscopy can be converted donor. The interstitial H2 molecule suggested as candidate for the “hidden” H species.

Acceptor-hydrogen complexes for the group III acceptors, B, Al, and Ga, in Si have been studied with low-temperature infrared spectroscopy. The Si-H stretching band narrows dramatically upon cooling to low temperature thereby aiding detection of vibrations Al Ga acceptor-H complexes. frequency 2201 cm−1 we measured Al-H complex is reasonable agreement prediction made by G. DeLeo W. B. Fowler [Phys. Rev. B 31, 6861 (1985)] (2220 a 〈111〉 interstitial configuration H). Assignment new...

The infrared spectra of acceptor-H centers in passivated Si for B, Al, and Ga provide evidence an unexpected low-frequency excitation the complexes. broad vibrational bands observed near 2000 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ at room temperature shift to higher frequency narrow dramatically upon cooling He temperature. While B-H--related band remains structureless intermediate temperatures, Al-H Ga-H complexes show thermally populated sidebands low-energy side main bands. indicate...

The effect of hydrogen plasma exposure on the deep level defects present in GaAs grown by molecular beam epitaxy (MBE) has been investigated transient spectroscopy and photoluminescence. three commonly observed MBE layers, M1, M2, M4 levels, found to be at a total concentration 5×1013 cm−3, are completely passivated plasma. At low carrier concentration, samples where surface recombination is suppressed thin GaxAl1−xAs cap, passivation these increases photoluminescence efficiency factors 30...

β-Ga2O3 is a transparent conducting oxide with wide bandgap (4.9 eV) whose properties are generating widespread interest. It has been found that hydrogen can play key role in the conductivity of Ga2O3 by passivating deep defects and acting as shallow donor. Recent vibrational spectroscopy experiments have dominant center polarized O-H line at 3437 cm−1. These along theoretical analysis assign this to defect consisting two equivalent H atoms trapped relaxed Ga vacancy. An expansion research...

β-Ga2O3 is an ultrawide bandgap semiconductor that attracting much attention for applications in next-generation high-power, deep UV, and extreme-environment devices. Hydrogen impurities have been found to a strong effect on the electrical properties of β-Ga2O3. This Tutorial survey what has learned about O–H centers from their vibrational properties. More than dozen, discovered by infrared absorption spectroscopy. Theory predicts defect structures with H trapped at split configurations...

The motion of hydrogen in the B-H complex silicon has been studied. An applied stress is used to produce a preferential alignment at temperatures sufficiently high for H move within (above \ensuremath{\sim}60 K). This complexes detected by comparing optical-absorption strengths stretching vibration light polarized parallel and perpendicular axis. From kinetics decay after removed we show that from bond-centered site around B atom thermally activated with an activation energy 0.19 eV.

The effect of hydrogen plasma exposure upon shallow donors and DX centers in silicon-doped AlGaAs has been investigated by deep level transient spectroscopy capacitance versus voltage measurements. Following to a for 30 min at 250 °C, the center activity are reduced an order magnitude throughout 1.6-μm-thick layer molecular beam epitaxially grown AlGaAs. Isochronal annealing studies showed that both donor electrical recover together about 400 °C. recovery mimics behavior GaAs activation...

Single crystals of superconducting ${\mathrm{Ba}}_{2}M{\mathrm{Cu}}_{3}{\mathrm{O}}_{x}$ ($M=\mathrm{Y},\phantom{\rule{0ex}{0ex}}\mathrm{G}\mathrm{d}$) have been used for a study the polarization dependence Raman spectra so as to better understand lattice dynamics and role O defects in these materials. Several prominent vibrational bands strong can all be attributed specific modes with ${A}_{g}$ symmetry. Broad features between 500 600 ${\mathrm{cm}}^{\ensuremath{-}1}$ are suggested related...

We report the results of a uniaxial stress study vibrational absorption due to hydrogen-passivated boron acceptors and arsenic donors in silicon. Under stress, H-related bands shift split frequency. From observed splittings intensity ratios we determine that symmetry both centers is trigonal. For B-H observe large sensitivity which speculate tendency H move off 〈111〉 axis complex under compression. The two As-H are confirmed be stretching doubly degenerate wagging modes. Our provide support...

We have studied the Cu-O vibrations in $M{\mathrm{Ba}}_{2}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7}$ systems with $M=\mathrm{Y},\phantom{\rule{0ex}{0ex}}\mathrm{E}\mathrm{u},\phantom{\rule{0ex}{0ex}}\mathrm{a}\mathrm{n}\mathrm{d}\phantom{\rule{0ex}{0ex}}\mathrm{G}\mathrm{d}$ by Raman spectroscopy. The observed features are similar three systems. four bands 300-700 ${\mathrm{cm}}^{\ensuremath{-}1}$ frequency region exhibit isotopic shifts upon $^{18}\mathrm{O}$ substitution implying that these modes...

In this paper we present a theoretical analysis of the intramolecular stretching spectrum D2O in H2O and for both ice I amorphous solid water H2O(as). The model includes dependence harmonic (krr) stretch–stretch interaction (krr′) force constants on hydrogen bonding as well Fermi resonance between fundamentals bending overtone. Provided that width mode is broadened by intermolecular coupling, then reproduces anomalously large widths splittings recently reported Devlin et al. value constant...

The problem of hydrogenation InP without surface degradation has been surmounted by exposure the to a hydrogen plasma through thin SiNx(H) cap layer. This layer is H permeable at temperature 250 °C, but P or PH3 impermeable thus minimizing loss and attendant In droplet formation. contrast our results for this type GaAs, we find that shallow acceptors in are heavily passivated, whereas donors only very weakly affected. For example, p+-InP(Zn) 3×1018 cm−3 its residual hole concentration...

Two features have been observed in the infrared absorption spectrum of new superconductors ${\mathrm{La}}_{2\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Sr}}_{\mathrm{x}}$${\mathrm{CuO}}_{4}$. The higher-frequency feature at 677 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ ${\mathrm{La}}_{2}$${\mathrm{CuO}}_{4}$ dominates for x=0. However, small Sr replacements (x\ensuremath{\gtrsim}0.03) cause 677-${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ band to be reduced dramatically intensity and...

Atomic profiles show that hydrogen is incorporated in GaAs:C has been grown by metalorganic molecular beam epitaxy. The concentration found to be about 5% of the carbon for our growth conditions. An infrared absorption study shows this involved stable C-H complexes. At lower C concentrations (<1019 cm−3) CAs-H complex dominant species involving and H. higher new complexes H appear.

A stress-induced dichroism study of the 1106-cm−1 and 515-cm−1 modes interstitial oxygen in silicon has been undertaken order to assign mode. It found that mode is due symmetric stretching motion Si–O–Si ‘‘defect molecule’’ often used explain vibrational spectrum oxygen. The implications assignment both structure characterization concentration are discussed.