A5052050458- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Quantum Information and Cryptography
- Quantum Computing Algorithms and Architecture
- Advanced Condensed Matter Physics
- Ferroelectric and Negative Capacitance Devices
- Graphene research and applications
- Near-Field Optical Microscopy
- Quantum Mechanics and Applications
- Advanced Thermodynamic Systems and Engines
- Advanced X-ray and CT Imaging
- Atomic and Subatomic Physics Research
- Advanced Thermodynamics and Statistical Mechanics
- Thermal Radiation and Cooling Technologies
- nanoparticles nucleation surface interactions
University of Copenhagen
2015-2020
Rigetti Computing (United States)
2018
Copenhagen Institute for Futures Studies
2015
Institute of Photonic Sciences
2013
Delft University of Technology
2011
Harnessing techniques from analog signal processing, we establish a new path for large-scale quantum computation.
The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifetimes as a function emitter-graphene distance d, find agreement universal scaling law, governed by fine-structure constant. observed energy transfer- rate is in 1/d^4 dependence characteristic 2D lossy media. decay 90 times (transfer efficiency...
Independent readout of two single-spin qubits in quantum dots is achieved an all-electrical setup.
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for electronics. However, quantum Hall effect, one of most fascinating effects electrons confined in two dimensions, remains underexplored these complex heterointerfaces. Here, we report experimental observation quantized resistance a heterointerface based on modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding...
The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in conductivity STO-based interfaces, consequences for superconductivity remain largely unknown. We study interfaces based on amorphous LAO top layers grown room temperature (a-LAO/STO) and demonstrate a phase...
Abstract In a solid-state host, attractive electron–electron interactions can lead to the formation of local electron pairs which play an important role in understanding prominent phenomena such as high T c superconductivity and pseudogap phase. Recently, evidence paired ground state without was demonstrated at level single electrons quantum dots interface LaAlO 3 SrTiO . Here, we present detailed study excitation spectrum transport processes gate-defined /SrTiO dot exhibiting pairing low...
Controlling interfaces using electric fields is at the heart of modern electronics. The discovery conducting interface between two insulating oxides LaAlO3 (LAO) and SrTiO3 (STO) has led to a number interesting field-dependent phenomena. Recently, it was shown that replacing LAO with spinel γ-Al2O3 (GAO) allows good pseudo-epitaxial film growth high electron mobility low temperatures. Here, we show GAO/STO resistance, similar LAO/STO, can be tuned by orders magnitude room temperature field...
Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide is challenging. In particular, oxides while preserving a high mobility remains underexplored and inhibits the study quantum mechanical effects where extended mean free paths are paramount. This letter presents effective strategy both amorphous-LaAlO3/SrTiO3 (a-LAO/STO) modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) interfaces. Our based on selective wet...
We investigate the $g$-factors of individual electron states in gate-defined quantum dots fabricated from ${\mathrm{LaAlO}}_{3}/{\mathrm{SrTiO}}_{3}$ heterostructures. consider both case effective positive charging energy ($U>0$) where single electrons are added upon increasing local gate voltage, and $U<0$ pairing is observed. The extracted field dependence dot addition spectrum. Tunnel couplings confinement tunable by voltages regime weakest coupling, we find close to 2 due quenching...
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs oxide interfaces involve many-body interactions and give rise to a rich set phenomena5, example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, phase separation10. However, large enhancement...