AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition used to fabricate surface acoustic wave (SAW) devices. Compared AlN-based devices, the SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K2, range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than 300% increase compared that thus demonstrating potential applications high frequency resonators, sensors,...

Transition metal doping of aluminium nitride (AlN) type thin films was recently employed to increase the piezoelectric constants for application in micro electromechanical systems. YxAl1−xN were synthesized with varying x up 11.6% by reactive co-sputtering from elemental Al and Y targets. Ab initio density functional theory studies = 50% yttrium suggest increasing d33 d31 content. Experimental measurements yield values content though, remaining below prediction ab calculations. Detailed...

This Letter reports on an advanced out-of-plane bending mode for aluminum-nitride (AlN)-actuated cantilevers. Devices of different thickness were fabricated and characterized by optical electrical measurements in air liquid media having viscosities up to 615 cP compared the classical torsional modes. Finite element method eigenmode analyses performed showing excellent agreement with measured shapes resonance frequencies. Quality factors (Q-factor) behavior evaluated as a function cantilever...

Piezoelectric energy harvesting offers the possibility to make use of ambient vibrations most beneficially feed low power sensor nodes. This paper demonstrates fabrication and characterization piezoelectric cantilevers with AlN Sc <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> N (x = 27%) thin films for evaluations their performance. The mainly focuses on measurement output at...

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, high temperature stability and good thermal match silicon. Basically, the operational of materials limited by increase leakage current well enhanced diffusion effects at elevated temperatures. This work focuses on characterization aluminum thin films after post deposition annealings up temperatures...

In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying interface between AlN film silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical The were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, x-ray diffraction. By preconditioning Si substrate...

The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying with scandium (Sc), thus offering superior for applications in micro electro-mechanical systems devices. ScxAl1−xN thin films have been prepared DC reactive magnetron sputtering on Si (100) substrates from a single target. When targeting concentration range x = 0 up to 0.15, the preparation conditions optimized varying Ar/N2 ratio gas. To incorporate an increasing Sc concentration, higher has be...

Piezoelectric scandium aluminium nitride (Sc x Al1-x N) thin films offer a large potential for the application in micro electromechanical systems, as advantageous properties of pure AlN are maintained, but combined with an increased piezoelectric actuation and sensing potential. Sc N = 27% have been prepared by DC reactive magnetron sputtering to find optimized deposition parameters maximize constants d33 d31. For accurate simultaneous measurement these Laser Doppler Vibrometry has applied...

This paper reports the characterization of scandium aluminum nitride (Al1−xScxN, x = 27%) films and discusses surface acoustic wave (SAW) devices based on them. Both AlScN AlN were deposited silicon by sputtering possessed columnar microstructures with (0 0 2) crystal orientation. The AlScN/Si SAW showed improved electromechanical coupling coefficients (K2, ~2%) compared pure (<0.5%). performance two types was also investigated compared, using acoustofluidics as an example. achieved much...

It is the objective of this paper to report on performance piezoelectric MEMS resonators for viscosity and density measurements at elevated temperatures. A custom-built temperature controlled measurement setup designed fluid temperatures up 100 °C. Piezoelectric single-side clamped are fabricated, excited in 2nd order roof tile-shaped mode (13-mode) exposed several liquids (i.e. D5, N10, N35, PAO8, olive oil, ester oil N100). At next step, these results analysed applying a straightforward...

Optical cavities are of central importance in numerous areas physics, including precision measurement, cavity optomechanics and quantum electrodynamics. The miniaturisation scaling to large numbers sites is interest for many these applications, particular computation simulation. Here we present the first scaled microcavity system which enables creation highly uniform, tunable light-matter interfaces using ions, neutral atoms or solid-state qubits. microcavities created by means silicon...

This paper presents a robust Q-control approach based on an all-electrical feedback loop enhancing the quality factor of resonant microstructure by using self-sensing capability piezoelectric thin film actuator made aluminium nitride. A lock-in amplifier is used to extract signal which proportional current. The measured real part replace originally low-quality and noisy modulate driving voltage thin-film actuator. Since reduces noise in substantially, proposed enhancement avoids disadvantage...

This letter reports on higher orders of an advanced out-of-plane bending mode in aluminium-nitride (AlN)-actuated cantilever plates achieving the highest quality factors (Q-factor) cantilever-based MEMS (micro electromechanical system) resonators liquids up to now. Devices based a 20 μm thick silicon were fabricated and characterised by optical electrical measurements air different liquids. Furthermore, finite element method eigenmode analyses performed, showing excellent agreement with...

Molybdenum and molybdenum nitride thin films are presented, which deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount nitrogen during film synthesization, to mechanical electrical properties is investigated. crystallographic phase lattice constants determined x-ray diffraction analyses. Further information on microstructure as well biaxial stress gained from techniques such transmission electron microscopy, scanning microscopy wafer...

In this work, a comprehensive characterization of metal-insulator-semiconductor structures by impedance spectroscopy is demonstrated for the case electrically insulating, highly c-axis oriented, 600 nm sputter-deposited AlN films on n-Si substrates with Al top electrodes. Direct visual analysis and equivalent circuit fitting dielectric data were performed. For latter procedure, model consisted three series resistor-capacitor connection elements contributions detected. The identified as film,...

Recent publications on acoustic MEMS transducers present a new three-dimensional folded diaphragm that utilizes buried in-plane vibrating structures to increase the active area from small chip volume. Characterization of mechanical properties plays key role in development transducers, whereby established measurement methods are usually tailored close sample surface. In order access lateral vibrations, extensive and destructive preparation is required. This work presents passive technique...