K. Zitouni

ORCID: 0000-0002-3091-9873
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Research Areas
  • Semiconductor Quantum Structures and Devices
  • ZnO doping and properties
  • Quantum and electron transport phenomena
  • Advanced Semiconductor Detectors and Materials
  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Spectroscopy and Laser Applications
  • Chalcogenide Semiconductor Thin Films
  • Semiconductor materials and interfaces
  • Solid State Laser Technologies
  • Gas Sensing Nanomaterials and Sensors
  • Physics of Superconductivity and Magnetism
  • Acoustic Wave Resonator Technologies
  • Electronic and Structural Properties of Oxides
  • Advancements in Semiconductor Devices and Circuit Design
  • Metal and Thin Film Mechanics
  • Copper-based nanomaterials and applications
  • Thermal Expansion and Ionic Conductivity
  • Optical and Acousto-Optic Technologies
  • Combustion and flame dynamics
  • Advanced Antenna and Metasurface Technologies
  • Magnetic and transport properties of perovskites and related materials
  • Computational Fluid Dynamics and Aerodynamics
  • Superconductivity in MgB2 and Alloys

Université Oran 1 Ahmed Ben Bella
2012-2024

University of Biskra
2020

Centre National de la Recherche Scientifique
1986-1987

Institut d'Électronique et des Systèmes
1986

We investigate how the template crystal orientation indices (hk.??) can influence intensity of density elastic energy and polarization fields in wurtzite nitrides oxides semiconductor strained layer heterostructures. propose analytical relations between angle ?, defined as direction sixfold axis unstrained material normal to growth plane, (i) value total (ii) stored layer. find that quasi-cancellation quantum confined stark effect (QCSE) be generally obtained by carefully selecting set. This...

10.1088/0268-1242/27/2/024009 article EN Semiconductor Science and Technology 2012-01-19

Hall-effect and transverse-magnetoresistance measurements were performed on pure n-type InAs samples (n\ensuremath{\simeq}2\ifmmode\times\else\texttimes\fi{}${10}^{16}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$) under magnetic fields up to 180 kG hydrostatic pressures 18 kbar in the temperature range 2.7--8 K. At P13 kbar, freezeout takes place into a shallow-donor level which shifts downward from \ensuremath{\Gamma} conduction-band minimum with pressure coefficient -0.077 meV/kbar. P>13...

10.1103/physrevb.31.8013 article EN Physical review. B, Condensed matter 1985-06-15

10.1016/j.spmi.2021.106901 article EN Superlattices and Microstructures 2021-04-30

Hall-coefficient and transverse magnetoresistivity measurements performed in magnetic fields up to 18 T hydrostatic pressures 16.5 kbar reveal several features of the behavior shallow donorlike impurity states n-type InP with concentrations spanning metal-insulator transition (2.2\ifmmode\times\else\texttimes\fi{}${10}^{15}$...

10.1103/physrevb.35.6260 article EN Physical review. B, Condensed matter 1987-04-15

Abstract We present a theoretical study of the effects lattice‐mismatch induced built‐in strain on electronic properties valence band states in wurtzite ZnO/Zn 1–x Mg x O Quantum Well (QW) heterostructures. In this purpose, 6x6 k · p method has been used to incorporate and nonparabolicity. The energies corresponding transitions between conduction (C), heavy hole (HH), light (LH) crystal‐field split‐off (CH) bands have calculated as function composition strain. also energy dispersions wave...

10.1002/pssc.200673569 article EN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 2007-01-01

We present a theoretical study of the optical absorption coefficient Urbach tail broadening parameter Γ behavior in Hg1−xCdxTe alloy semiconductor 0.21 ≤ x 0.6 composition interval. This interval corresponds to very attractive 0.10 EG 0.75 eV medium infrared (MIR) and far (FIR) ranges. compare two nonparabolic models based on Kane 4-band formalism, one including Burstein–Moss shift called NPBM-model other without NP-model. By comparing results both with existing experimental data, we show...

10.1063/5.0101924 article EN Journal of Applied Physics 2022-11-01

Abstract This work examines the grown of Zn 1-x Co x O films at different concentrations 420°C by ultrasonic spray deposition. The effect concentration on optical characterization, structure crystallinity and electrical conductivity was studied. Transmission spectra presented three edges in visible region, it observed range 541 656 nm wavelengths, which related to d-d transitions 2+ ion with 3d 7 high-spin configurations a tetrahedral crystal field formed neighboring 2− ions. gap energy...

10.2478/adms-2024-0012 article EN Advances in Materials Science 2024-06-01

Abstract We perform a theoretical study of In x Al 1‐x N/ZnO and Ga strained Quantum Well (QW) Lasers oriented along the non‐polar A‐plane axis. order to determine energy band‐offsets in both heterostructures as function alloy composition, we use ab‐initio method compute total energies these systems. Then, k · P within envelop formalism conduction valence subband structures for various compositions well widths. Finally, calculate Laser gain such QW heterostructures. Our results show that...

10.1002/pssc.201001156 article EN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 2011-03-31

The properties of sulfur- and selenium-related impurity states have been studied as a function pressure composition in heavily doped ${\mathrm{Ga}}_{\mathrm{x}}$${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$Sb. Hall-coefficient electrical-resistivity measurements were made under hydrostatic pressures up to 25 kbar, the alloy range 0.30\ensuremath{\lesssim}x\ensuremath{\lesssim}0.78 temperature 77 K\ensuremath{\lesssim}T\ensuremath{\lesssim}300 K. In both S-doped Se-doped samples,...

10.1103/physrevb.34.2638 article EN Physical review. B, Condensed matter 1986-08-15

Electronic structures, effect of the substitution and structure physical-chemistry properties relationship for macrolide derivatives, have been studied by PM3 ab initio methods. In present work, calculated values, namely net charges, bond lengths, MESP, dipole moments, electron-affinities, heats formation, then, we treated structural, physical chemical relationships a series derivatives with inhibition activity against Mycobacterium tuberculosis. QSAR studies were done these using...

10.4314/jfas.v12i3.4 article EN cc-by-nc Journal of Fundamental and Applied Sciences 2020-09-01

We present a theoretical study based on the perturbative Luttinger-Kohn model so-called k.P model[1] of high internal electric fields and built-in strain effects laser properties wide bandgap II-VI ZnO/MgxZn1-xO Zn1-yCdyO/ZnO Quantum Well (QW) lasers operating in near UV wavelength range. The field (>1MV/cm) are due to non-centrosymmetric Würtzite crystal structure with spontaneous piezoelectric polarizations. Internal found induce red-shift wavelength, reduce drastically gain through...

10.1063/1.4736761 article EN AIP conference proceedings 2012-01-01

Magnetic freeze-out experiments under hydrostatic pressure have been performed in the temperature range 4.2-77 K on direct-band-gap Si-doped AlGaAs samples. Successive illuminations used to monitor concentrations of metastable shallow states arising from DX centres. With increasing those states, evidence is given for an insulator-metal transition confirming Gamma character these impurity states. Moreover a shallow-deep shown hold at X=0.32 as result appearance gap x=0.30 localized level also...

10.1088/0268-1242/6/6/018 article EN Semiconductor Science and Technology 1991-06-01

teaching and research institutions in France or abroad, from public private centers.L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques niveau recherche, publiés ou non, émanant des établissements d'enseignement recherche français étrangers, laboratoires publics privés.

10.1051/rphysap:01984001903021500 article FR Revue de Physique Appliquée 1984-01-01

We present a k.P‐theory optimization study of type I Ga1‐xInxNySb1‐y/AlxGa1‐xNySb1‐y dilute antimonide nitrides strained quantum well lasers (QWL) for 3–4 μm mid infrared (MIR) wavelengths where N contents are kept ≤2%. show the critical influence on laser parameters such small nitrogen amounts in this very narrow ≤2% range. The best structure is found to be Ga0.9In0.1N0.02Sb0.98/Al0.1Ga0.9N0.01Sb0.99 which shows significantly increased emission up λ≈4 μm, improved modal gain G order 250...

10.1063/1.3671720 article EN AIP conference proceedings 2011-01-01
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