- ZnO doping and properties
- Copper-based nanomaterials and applications
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Silicon Nanostructures and Photoluminescence
- Luminescence Properties of Advanced Materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Condensed Matter Physics
- Nanowire Synthesis and Applications
- Magnetic and transport properties of perovskites and related materials
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Advanced Photocatalysis Techniques
- Magnesium Oxide Properties and Applications
- Quantum optics and atomic interactions
- Anodic Oxide Films and Nanostructures
- Multiferroics and related materials
- Nuclear Materials and Properties
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Magneto-Optical Properties and Applications
- Advanced NMR Techniques and Applications
- Ion-surface interactions and analysis
Polish Academy of Sciences
2021-2025
Institute of Physics
2021-2024
Berdyansk State Pedagogical University
2023-2024
Vasyl Stefanyk Precarpathian National University
2015
A 0.25% iron (Fe3+)-doped LiGaO2 phosphor was synthesized by a high-temperature solid-state reaction method. The characterized utilizing X-ray diffraction (XRD), scanning electron microscopy (SEM), high-pressure photoluminescence, and photoluminescence decay measurement techniques using diamond anvil cells (DACs). powder analysis shows that the is β polymorph of with an orthorhombic crystallographic structure at room temperature. SEM result also confirms presence well-dispersed...
This study introduces an innovative method for synthesizing Cadmium Oxide /Cadmium Sulfide/Zinc heterostructures (CdO/CdS/ZnO), emphasizing their potential application in solar energy. Utilizing a combination of electrochemical deposition and oxygen annealing, the research provides thorough analysis through scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, diffraction (XRD), Raman photoluminescence (PL) spectroscopy. The findings reveal complex surface...
{CdO/ZnO}m superlattices (SLs) have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The observation of satellite peaks in the XRD studies as-grown and annealed samples confirms presence a periodic superlattice structure. properties SLs deposited c-oriented were investigated transmission electron microscopy, X-ray diffraction temperature dependent PL studies. deformation structure was observed after rapid thermal annealing. As annealing increases,...
In situ Eu-doped ZnCdO-ZnMgO superlattices with varying ZnCdO:Eu and ZnMgO sublayers thicknesses were deposited by plasma assisted molecular beam epitaxy.
In situ Eu-doped {ZnCdO/ZnMgO} superlattices (SLs) with varying ZnCdO and ZnMgO sublayer thicknesses were deposited using plasma-assisted molecular beam epitaxy.
This article explores the structural properties of molecular beam epitaxy grown {CdO/MgO} superlattices on sapphire substrates different crystallographic orientations (a-, c-, r-, and m-plane). The investigations involve a comprehensive analysis using X-ray diffraction Raman spectroscopy. High-resolution studies unveil significant influence surface symmetry both epitaxial layers, particularly with respect to occurrence twins in superlattices. Remarkably, no are observed r-oriented...
We report details on the synthesis and properties of barium praseodymium tungstate, Ba2PrWO6, a double perovskite that has not been synthesized before. Room-temperature (RT) powder X-ray diffraction identified most probable space group (SG) as monoclinic I2/m, but it was only slightly distorted from cubic structure. photoelectron spectroscopy confirmed initial (postsynthesis) material contained in both 3+ 4+ charge states. The former (Pr3+) disappeared after exposure to UV light at RT....
Abstract Trends in the behavior of band gaps short-period superlattices (SLs) composed CdO and MgO layers were analyzed experimentally theoretically for several thicknesses sublayers. The optical properties SLs investigated by means transmittance measurements at room temperature wavelength range 200–700 nm. direct gap {CdO/MgO} tuned from 2.6 to 6 eV varying thickness 1 12 monolayers while maintaining same layer 4 monolayers. Obtained values indirect are higher than those calculated an ab...
A pair of heterojunctions with different type interlayer: n-ZnO/ZnCdO and n-ZnCdO/ZnO were grown by molecular beam epitaxy on p-Si substrate investigated in the present work. At first, their electrical properties parameters discussed following current-voltage (I-V) characteristics measured over a wide range temperatures from 40 K to 300 K. The analysis I-V plots log-log scale pointed out presence carrier transport mechanisms: tunneling, multi-tunneling capture-emission space-charge limited...
Presenting a novel insight into Mn 2+ luminescence processes in the ZnS nanophosphor and revealing its unique high-pressure decay behaviour self-powered mechanoluminescence.
In this study, we investigated Eu-doped {ZnCdO/ZnO} superlattice structures grown by plasma-assisted molecular beam epitaxy. Such materials may find their use in thin-film solar cells, photodetectors, or red-light-emitting diodes. For application purposes, extensive research on fundamental properties and dependence growing parameters needs to be done. Thus, present the results of Raman scattering measurements that prove incorporation Eu atoms into superlattice. Rapid thermal processing...
Abstract This study focuses on the method for determining exact composition Cd x Zn 1−x O semiconducting material using secondary ion mass spectrometry. The calibration curve was employed to establish a quantitative relationship between intensity of ions and concentrations elements in thin films. Additionally, compares relative sensitivity factors value O. Furthermore, comparison performances Time Flight Magnetic Sector SIMS analysis films is presented. approach aims enhance accuracy reliability
The nanoscale morphology of short-period {CdO/ZnO}n superlattices (SLs) grown by plasma-assisted molecular beam epitaxy on m-oriented sapphire substrates is studied. SL structures consist 25 repetitions subsequently deposited ZnO and CdO layers. X-ray diffraction (XRD) transmission electron microcopy (TEM) studies confirm the presence 2D with wurtzite phase sublayers rocksalt structure sublayers. For thicker sublayers, (11̅.3) twinning was observed. periods are calculated based...
In this work, we have investigated a series of CdO layers grown by the plasma-assisted molecular beam epitaxy technique on m-plane sapphire substrate. The relation between Cd and O2 parameters during growth influences stoichiometry it affects morphological, optical, electrical properties which are manifested in roughness parameter, lattice constant, optical bandgap, parameter layers. surface morphology structural were studied using atomic force microscopy X-ray diffraction respectively....
Zinc oxide has long been considered a promising wide bandgap semiconductor for optoelectronic applications in the UV range of wavelengths. On other hand, Eu-doped ZnO appeared to be an interesting material red light applications. In this work, we are looking way increase emission from ZnO:Eu by adding Mg host. We explore effect tunable wide-bandgap host- Zn1–xMgxO on photoexcitation–emission properties dopant-europium ions. thin films with various compositions were epitaxially grown a-Al2O3...
A comprehensive photoluminescence and mechanoluminescence analysis of ZnS:Mn2+ nano-phosphor with zinc blende structure is presented. The sample containing quantum dot-sized nanocrystallites were synthesized by the chemical precipitation method shows excellent orange luminescence at ambient conditions related to 4T1->6A1 transition. stable identical behavior under both UV X-ray excitation also self-powered properties. pressure temperature-induced mechanism phosphor established. shift band...
Herein, the impact of arsenolite oxide (As 2 O 3 ) crystallites on structural and optical properties porous gallium arsenide (GaAs) is examined, focusing understanding potential passivation effect its influence material stability safety. Utilizing a comprehensive set analytical methods, including cathodoluminescence (CL) spectroscopy, Raman scattering X‐ray diffraction, interaction between GaAs substrate characterized. The results indicate that do not significantly alter electronic...