K. G. Grigorov

ORCID: 0000-0002-3176-1780
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About
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Research Areas
  • Metal and Thin Film Mechanics
  • Semiconductor materials and devices
  • Plasma Applications and Diagnostics
  • Plasma Diagnostics and Applications
  • ZnO doping and properties
  • Diamond and Carbon-based Materials Research
  • GaN-based semiconductor devices and materials
  • Ion-surface interactions and analysis
  • Acoustic Wave Resonator Technologies
  • Laser-induced spectroscopy and plasma
  • Solar and Space Plasma Dynamics
  • Ionosphere and magnetosphere dynamics
  • Gas Sensing Nanomaterials and Sensors
  • Geomagnetism and Paleomagnetism Studies
  • Copper Interconnects and Reliability
  • TiO2 Photocatalysis and Solar Cells
  • Silicon Carbide Semiconductor Technologies
  • Surface Modification and Superhydrophobicity
  • Ga2O3 and related materials
  • Iron oxide chemistry and applications
  • Magnetic Properties and Synthesis of Ferrites
  • Physics of Superconductivity and Magnetism
  • Material Properties and Applications
  • Astro and Planetary Science
  • Boron and Carbon Nanomaterials Research

Bulgarian Academy of Sciences
2008-2025

Space Research and Technology Institute
2014-2024

Instituto Tecnológico de Aeronáutica
2010-2024

Universidade Presbiteriana Mackenzie
2023

Institute of Electronics
2002-2013

Instituto de Aeronáutica e Espaço
2006-2012

Institute of Mechanics
2002-2006

University of Namur
1996

Université Paris-Sud
1994

Centre National de la Recherche Scientifique
1994

Titanium dioxide (TiO2) thin films have generated considerable interest over recent years, because they are functional materials suitable for a wide range of applications. The efficient use the outstanding properties these relies strongly on their basic characteristics, such as structure and morphology, which affected by deposition parameters. Here, we report influence plasma power precursor chemistry growth kinetics, morphology TiO2 grown Si(100) plasma-enhanced atomic layer (PEALD). For...

10.1088/0957-4484/27/30/305701 article EN Nanotechnology 2016-06-15

Since their early investigations, TiN coatings have sparked considerable interest because of remarkable mechanical properties, especially prominent hardness (30–60 GPa) and oxidation resistance. They are mainly used to harden protect cutting or sliding tools occasionally for decoration. Small quantities different ligands, including Ni, Cu, Co, added improve the smooth performance tools. These alloying elements lead formation nanocomposites, potentially altering characteristics imparting...

10.4028/p-i4mezu article EN Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum 2025-02-20

We propose an approach for estimating the polytropic index in solar wind. This is artificially introduced parameter simplifying essentially gasdynamic or magnetogasdynamic modeling of interplanetary plasma. The problem straightforward utilization equation to find sufficient homogeneous fragments wind flow, observed by single spacecraft only, where application this correct. algorithm following plasma data time series ensure separation segments that belong, with high probability, same flow...

10.1029/2006ja011760 article EN Journal of Geophysical Research Atmospheres 2006-10-01

Abstract. The Sun was extremely active during the "April Fool’s Day" epoch of 2001. We chose this period between a solar flare on 28 March 2001 to final shock arrival at Earth 21 April activity consisted two presumed helmet-streamer blowouts, seven M-class flares, and nine X-class last which behind west limb. have been experimenting since February 1997 with real-time, end-to-end forecasting interplanetary coronal mass ejection (ICME) times. Since August 1998, these forecasts distributed in...

10.5194/angeo-20-937-2002 article EN cc-by Annales Geophysicae 2002-07-31

We compare simulation results of real time shock arrival prediction with observations by the ACE satellite for a series solar flares/coronal mass ejections which took place between 28 March and 18 April, 2001 on basis Hakamada‐Akasofu‐Fry, version 2 (HAFv.2) model. It is found, via an ex post facto calculation, that initial speed waves as input parameter modeling crucial agreement observation simulation. The determined metric Type II radio burst must be substantially reduced (30 percent in...

10.1029/2001gl013659 article EN Geophysical Research Letters 2002-04-01

Au/GaN and Pt/GaN contacts have been studied with XPS. According to XPS depth profiling, the N signal is weak in region below metal contact Pt or Au decreases much more slowly than expected for a sharp interface. Next, we performed situ studies of formation on GaN. In contrast results from observe 2D growth little no chemical interaction between This suggests that conventional calculations sputtering yields ion-beam-induced mixing cannot be applied analysis noble metal/GaN profiles. Heating...

10.1557/s1092578300001496 article EN MRS Internet Journal of Nitride Semiconductor Research 1997-01-01

Cylindrical hollow cathode magnetron sputtering (HCMS) system was used to deposit crystalline titanium dioxide thin films on p-Si (100) substrates. For a fixed pressure of 0.6 Pa total gas flow rate 20 sccm and power 55 W, the influence oxygen percentage in Ar+O2 mixture structural surface properties studied by profilometry, XRD AFM. The substrates were placed inside at different positions along its symmetrical axis. Numerical simulations ion collection probability (CICP) done order compare...

10.1051/epjap/2009179 article EN The European Physical Journal Applied Physics 2009-11-25

Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor (PECVD) and magnetron sputtering, due to importance these materials microelectronics related fields. A drawback is large lattice mismatch between SiC Si. The insertion an aluminum nitride (AlN) intermediate layer them has shown useful overcome this problem. Herein, high-power impulse sputtering (HiPIMS)...

10.3390/mi10030202 article EN cc-by Micromachines 2019-03-22

The goal of this work is to study the effect plasma etching process on surface properties diamond-like carbon thin films having in mind applicability material for construction microfluidic channels. were deposited by dc magnetron sputtering onto p-type (100) 3 in. silicon wafers, at a deposition rate 8 nm/min. etch processes have been carried out RIE reactor with discharge produced an atmosphere oxygen diluted argon. Oxygen contents varied from 0 100% and different values power (from 20 up...

10.1016/s0026-2692(03)00077-6 article EN Microelectronics Journal 2003-04-07

A new dc hollow cathode plasma source has been assembled whith a conventional planar magnetron used together with another plane plate to form cavity. The system comprises two plates of aluminium separated by distance d, one them acting as target the cathode, other being an ordinary plate. discharge anode is metallic flange vacuum chamber. This leads enhanced ionization in cavity region and enables operate at significantly lower pressures than for typical configuration. As consequence,...

10.1590/s0103-97332006000300026 article EN Brazilian Journal of Physics 2006-06-01
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