A5003144279- 2D Materials and Applications
- Graphene research and applications
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Quantum Dots Synthesis And Properties
- MXene and MAX Phase Materials
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Metaheuristic Optimization Algorithms Research
- Advanced Malware Detection Techniques
- Carbon Nanotubes in Composites
- Evolutionary Algorithms and Applications
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Artificial Immune Systems Applications
- Security and Verification in Computing
- Magnetic properties of thin films
- Perovskite Materials and Applications
- Quantum and electron transport phenomena
- Ga2O3 and related materials
- Software Testing and Debugging Techniques
- Advancements in Battery Materials
- CCD and CMOS Imaging Sensors
- Nanowire Synthesis and Applications
Chinese Academy of Sciences
2001-2024
Hefei University of Technology
2024
Institute of Information Engineering
2022-2024
University of Chinese Academy of Sciences
2022-2024
Shenzhen University
2024
Southeast University
2021-2022
Shanghai Huali Microelectronics (China)
2015-2017
Institute of Physics
2017
Rice University
2011-2016
National University of Defense Technology
2015
Recently, two-dimensional layers of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, and WSe2, have attracted much attention for their potential applications in electronic optoelectronic devices. The selenide analogues MoS2 WS2 smaller band gaps higher electron mobilities, making them more appropriate practical However, reports on scalable growth high quality diselenide studies properties been limited. Here, we demonstrate the chemical vapor deposition (CVD) uniform MoSe2...
Ternary two-dimensional dichalcogenide alloys exhibit compositionally modulated electronic structure, and hence, control of dopant concentration within each individual layer these compounds provides a powerful tool to efficiently modify their physical chemical properties. The main challenge arises when quantifying locating the atoms in order better understand fine-tune desired Here we report synthesis molybdenum disulfide substitutionally doped with broad range selenium concentrations,...
Abstract Micrometer‐sized electrochemical capacitors have recently attracted attention due to their possible applications in micro‐electronic devices. Here, a new approach large‐scale fabrication of high‐capacitance, two‐dimensional MoS 2 film‐based micro‐supercapacitors is demonstrated via simple and low‐cost spray painting nanosheets on Si/SiO chip subsequent laser patterning. The obtained are well defined by ten interdigitated electrodes (five per polarity) with 4.5 mm length, 820 μm wide...
We report the direct growth of large, atomically thin GaSe single crystals on insulating substrates by vapor phase mass transport. A correlation is identified between number layers and a Raman shift intensity change. found obvious contrast resistance material in dark when illuminated with visible light. In photoconductivity measurement we observed low current. The on-off ratio measured 405 nm at 0.5 mW/mm(2) light source order 10(3); photoresponsivity 17 mA/W, quantum efficiency 5.2%,...
Biological synapses store and process information simultaneously by tuning the connection between two neighboring neurons. Such functionality inspires task of hardware implementation neuromorphic computing systems. Ionic/electronic hybrid three-terminal memristive devices, in which channel conductance can be modulated according to history applied voltage current, provide a more promising way emulating substantial reduction complexity energy consumption. 2D van der Waals materials with single...
We demonstrate the excitation and gate control of highly confined surface plasmon polaritons propagating through monolayer graphene using a silicon diffractive grating. The normal-incidence infrared transmission spectra exhibit pronounced dips due to guided-wave resonances, whose frequencies can be tuned over range ~80 cm(-1) by applying voltage. This novel structure provides way excite actively plasmonic waves in is thus an important building block systems.
Gate-controllable transmission of terahertz (THz) radiation makes graphene a promising material for making high-speed THz wave modulators. However, to date, graphene-based modulators have exhibited only small on/off ratios due absorption in single-layer graphene. Here we demonstrate ∼50% amplitude modulation waves with gated by the use extraordinary through metallic ring apertures placed right above layer. The induced ∼7 times near-filed enhancement These results promise complementary...
The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth TMD with large grain sizes and uniformity remained very challenging. Here is reported a simple, chemical vapor deposition approach for MoSe 2 reported, which nucleation density can be reduced from 10 5 to 25 nuclei cm −2 , leading millimeter‐scale single crystals as well continuous macrocrystalline films...
The nonlinear properties of black phosphorus (BP) nanoplatelets (NPs) have been characterized with Z-scan measurements under 800-nm femtosecond pulsed laser excitation. A transition from saturable absorption (SA) to reverse (RSA) the increase intensity was observed in open-aperture (OA) measurements. Simultaneously, closed-aperture (CA) were carried out investigate refractive index BP NPs together, and a value n(2) ≃(6.8±0.2)×10(-13) m2/W obtained. analyzed according band structure BP....
Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only introducing tellurium (Te) into CVD process. The as-synthesized monolayers show high phase purity crystallinity. optical electrical performance of these materials comparable those synthesized at higher temperatures. We believe work will accelerate industrial semiconducting
Conventional wisdom suggests that decreasing dimensions of dielectric materials (e.g., thickness a film) should yield increasing capacitance. However, the quantum capacitance and so-called "dead-layer" effect often conspire to decrease extremely small nanostructures, which is in sharp contrast what expected from classical electrostatics. Very recently, first-principles studies have predicted nanocapacitor made graphene hexagonal boron nitride (h-BN) films can achieve superior capacitor...
Large-scale suspended architectures of various two-dimensional (2D) materials (MoS2, MoSe2, WS2, and graphene) are demonstrated on nanoscale patterned substrates with different physical chemical surface properties, such as flexible polymer (polydimethylsiloxane), rigid Si substrates, metal (Au/Ag). This transfer method represents a generic, fast, clean, scalable technique to suspend 2D atomic layers. The underlying principle behind this approach, which employs capillary-force-free...
The emergence of a rich variety two-dimensional (2D) layered semiconductor materials has enabled the creation atomically thin heterojunction devices. Junctions between 2D layers and 3D bulk semiconductors can lead to junctions that are fundamentally electronically different from covalently bonded conventional junctions. Here we propose new band diagram for formed n-type monolayer MoS2 p-type Si, in which conduction valence band-edges drawn both stacked in-plane directions. This helps...
This article presents two techniques to address the reliability issues caused by <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dv/dt</i> under fast switching conditions of gallium nitride high electron mobility transistors. The first technique called active overdrive voltage control is proposed adjust gate driving strength according rising speed node ( ) adaptively and, thus, decrease without increasing too much loss. second three-branch...
Cubic boron nitride nanocrystals with particle sizes of 25 nm have been synthesized at low temperature and pressure by the benzene thermal method. The X-ray diffraction, infrared absorption spectrum, photoelectron select-area electron diffraction pattern agree very well, they confirm that main phase in sample is cubic (see peaks marked ·).
Silica hollow microspheres (SHMs) with size-tunable penetrating macropores from 250 nm to 560 are prepared by a water/oil/water ternary phase emulsion system. Furthermore, the thus-obtained SHMs can serve as superior support fabricate supported palladium catalysts for hydrogenation of bulky polystyrene molecules.
Wide-band-gap power devices hold great promise for creating power-conversion systems that are smaller, faster and more energy efficient than silicon devices. Benefiting from smaller parasitic capacitors superior conductive characteristics of gallium-nitride (GaN) transistors, the switching frequency (fSW) converters can soar to several or even dozens MHz. Meanwhile, efficiency be significantly improved. However, increasing speed leads large values di/dt dv/dt during turn-on transition...