A5062089810- Thermal properties of materials
- Diamond and Carbon-based Materials Research
- Electronic and Structural Properties of Oxides
- Advanced Thermoelectric Materials and Devices
- Advanced Surface Polishing Techniques
- Thermography and Photoacoustic Techniques
- Metal and Thin Film Mechanics
- Ferroelectric and Piezoelectric Materials
- Thermal Radiation and Cooling Technologies
- Silicone and Siloxane Chemistry
- Surface Modification and Superhydrophobicity
- Thermoelastic and Magnetoelastic Phenomena
- Chalcogenide Semiconductor Thin Films
- Optical Network Technologies
- Neural Networks and Reservoir Computing
- Photonic and Optical Devices
- Ultrasonics and Acoustic Wave Propagation
- Photopolymerization techniques and applications
- Thermal Expansion and Ionic Conductivity
- Advanced ceramic materials synthesis
University of Shanghai for Science and Technology
2022-2023
Changzhou University
2023
University of Florida
2014-2020
In this work, we perform nonequilibrium molecular dynamics simulations to study phonon scattering at two tilt grain boundaries (GBs) in SrTiO3. Mode-wise energy transmission coefficients are obtained based on wave-packet simulations. The Kapitza conductance is then quantified using a lattice approach. results of the both GBs compare well with those by direct method, except for temperature dependence. Contrary common belief, work show that optical modes SrTiO3 contribute significantly thermal...
As an all-optical learning framework, diffractive deep neural networks (D 2 NNs) have great potential in running speed, data throughput, and energy consumption. The depth of the misalignment layers are two problems to limit its further development. In this work, a robust network framework (multiscale U-Net, MDUNet) based on multi-scale features fusion has been proposed. expansion alignment robustness can be significantly improved by introducing sampling skip connections. Compared with common...
To satisfy the increasing requirements for high-quality cavity mirrors semiconductor lasers, influence of anisotropic stress field generated by scratching GaAs on quality cleavage planes was investigated. First, a novel method calculating interplanar spacing proposed to estimate favourable direction operation. Some mechanical properties in were calculated. Consequently, an calculation model established. The used analyse y-component distribution along different directions beneath indenter....
摘要: 针对GaAs基半导体激光芯片谐振腔面的超精密解理制造技术需求,开展GaAs材料解理加工分子动力学仿真及加工工艺实验研究。首先建立GaAs材料划片过程的分子动力学模型,研究[100]和[110]晶向的表面微观形貌及亚表面损伤深度,分析材料各向异性对划片形貌的影响机制;然后开展解理工艺实验对MD模型进行了验证,并分析解理面形貌的变化情况。仿真结果表明:相比于[100]晶向,[110]晶向上最大损伤宽度、划片宽度和亚表面损伤深度平均值分别降低5.23%、3.98%和2.61%,沿该晶向所得划片质量更优,此外最大损伤宽度、划片宽度和亚表面损伤深度均随划片深度增加而增加,而划片速度对GaAs表面形貌及亚表面损伤影响较小;通过工艺实验验证了MD仿真结果,并确认[110]为GaAs最佳解理加工晶向。
The dynamic interaction between phonons and dislocations in LiF has been studied using molecular dynamics simulations. simulations have captured the strong interactions low-frequency slow transverse acoustic that were observed experiments. Simulation results reveal is attributed to resonant phonons. Each dislocation segment found possess a set of modes characterized by large-amplitude out-of-phase vibrations atoms on both sides slip plane. frequencies associated with these exhibit nearly...
Existing methods for directly extracting the spectral phonon properties from molecular dynamics (MD) simulations, like normal mode analysis (NMA) and energy density analysis, all require a very long simulation time to produce reliable results with good convergence. So far, these are mainly applied in studies using small systems empirical potentials, as heavy computational load has greatly hindered their further applications. Here we propose perturbation-tracking (PT) method probing mode-wise...