A5100421712- Thermal properties of materials
- Semiconductor materials and interfaces
- Advanced Thermoelectric Materials and Devices
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Microstructure and mechanical properties
- Surface and Thin Film Phenomena
- Acoustic Wave Phenomena Research
- Magnetic and transport properties of perovskites and related materials
- Advanced ceramic materials synthesis
- Physics of Superconductivity and Magnetism
- Semiconductor Quantum Structures and Devices
- Noise Effects and Management
- Thermal Expansion and Ionic Conductivity
- Advancements in Semiconductor Devices and Circuit Design
- Phase-change materials and chalcogenides
- Thermal Radiation and Cooling Technologies
- Silicon Carbide Semiconductor Technologies
- Advanced Semiconductor Detectors and Materials
- Metal and Thin Film Mechanics
- Carbon Nanotubes in Composites
- Metamaterials and Metasurfaces Applications
- Thermography and Photoacoustic Techniques
- GaN-based semiconductor devices and materials
George Mason University
2025
University of Florida
2017-2024
Tianjin Chengjian University
2024
The University of Melbourne
2023
University of Antwerp
2021
National University of Singapore
2018-2019
Huazhong University of Science and Technology
2017
University of Puerto Rico-Mayaguez
2009-2016
Northwestern Polytechnical University
2016
Qingdao University of Science and Technology
2015
We report the preparation of α- and κ-phase In2Se3 nanowires by thermal evaporation investigation their phase transformations in situ synchrotron radiation X-ray diffraction (XRD) during a annealing process. The transformed into α-phase at 500 °C eventually to high temperature with layered structure 5 atoms-5 atoms 700 irreversibly. Different atomistic structures were modeled optimized DFT, which correlate well XRD results. also exhibit large difference resistivity before after annealing.
The characteristics of films possessing both outstanding flexibility and thermal conductivity are key for flexible integrated microelectronic devices. main issue is how to integrate diamond into thin improve conductivity. boron nitride-nano diamond/polyurethane (BN-ND/PU) composites prepared through a novel surface modification-assisted electrostatic bonding technique. A notable temperature reduction between the heat source film's by integrating 33% BN-ND PU matrix. large resistance BN-ND/PU...
We have prepared samples of nominal type Ba8CuxGe46−x by induction melting and solid state reaction. Analysis shows that these materials form type-I clathrates, with a copper content between x = 4.9 5.3, nearly independent the starting composition. used x-ray powder diffraction single-crystal electron to confirm cubic clathrate structure, while microprobe measurements confirmed stability ≈ 5 This result differs from corresponding Ag Au clathrates was not known previously due perhaps similar...
The structure and thermal boundary conductance of the wurtzite GaN/AlN (0001) interface are investigated using molecular dynamics simulation. Simulation results with three different empirical interatomic potentials have produced similar misfit dislocation networks core structures. Specifically, network at is found to consist pure edge dislocations a Burgers vector 1/3⟨12¯10⟩ has an eight-atom ring structure. Although lead properties values, all demonstrated significant effect on interface.
There is a great deal of interest vested in the superconductivity Si clathrate compounds with sp3 network, which structure dominated by strong covalent bonds among silicon atoms, rather than metallic bonding that more typical traditional superconductors. A joint experimental and theoretical investigation Al-substituted type-I clathrates reported. Samples general formula Ba8Si46−xAlx, different values x were prepared. With an increase Al composition, superconducting transition temperature TC...
Aluminum nitride has been widely used as heat-management material for large-scale integrated circuits and semiconductor packages because of its excellent insulation, high thermal conductivity, low dielectric constant loss, similar expansion coefficient to that silicon, non-toxicity. However, the increase oxygen content caused by hydration aluminum powder during storage often decreases conductivity ceramics. In this work, we propose an approach preparing high-thermal-conductivity AlN ceramics...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Yang Li, Wei Long, Raymond T. Tung; Inhomogeneous ohmic contacts: Barrier height contact area determination. Appl. Phys. Lett. 30 July 2012; 101 (5): 051604. https://doi.org/10.1063/1.4742142 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar...
Fluorescent nanodiamonds (FNDs) have been exploited as sensitive quantum probes for nanoscale chemical and biological sensing applications, with the majority of demonstrations to date relying on detection single FNDs containing either nitrogen vacancies or nitrogen-vacancy ensembles. This places significant limits measurement time, throughput statistical significance a measured result there is usually marked inhomogeneity within FND samples. Here, we developed platform that can report...