Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At same time, several models been developed to rationalize their operating mode. In this review, we examine performance of OFETs as revealed by recently published data, mainly terms mobility and on–off current ratio. We compare various compounds that used active component, describe most prominent fabrication techniques....

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTMolecular engineering of organic semiconductors: design self-assembly properties in conjugated thiophene oligomersFrancis Garnier, Abderrahim Yassar, Ryad Hajlaoui, Gilles Horowitz, Francoise Deloffre, Bernard Servet, Simone Ries, and Patrick AlnotCite this: J. Am. Chem. Soc. 1993, 115, 19, 8716–8721Publication Date (Print):September 1, 1993Publication History Published online1 May 2002Published inissue 1 September...

Abstract With the advent of devices based on single crystals, performance organic field‐effect transistors has experienced a significant leap, with mobility now in excess 10 cm 2 V −1 s . The purpose this review is to give an overview state‐of‐the‐art these high‐performance transistors. paper focuses problem parameter extraction, limitations by interfaces, which include dielectric–semiconductor interface, and injection retrieval charge carriers at source drain electrodes. High‐performance...

We have performed current–voltage measurement on polycrystalline sexithiophene (6 T) thin film transistors at temperatures ranging from 10 to 300 K. A method is developed extract the carrier mobility an analysis of transfer characteristics. In particular, data are corrected for contact resistance. The found increase quasilinearly with gate voltage room temperature. dependence becomes superlinear low temperatures. temperature shows three domains. For 100 K<T<300 K, thermally...

The first all‐organic electronic device to boast the same characteristics as silicon‐based ones is reported. Not only does use of an organic insulating layer result in increased charge‐carrier mobility semiconductor, but it also imparts a flexible quality whole which allows be rolled up, bent or twisted without reducing performance. organic‐based devices show remarkable tolerance towards moisture and impurities, production being possible normal laboratory environment.

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTGrowth and Characterization of Sexithiophene Single CrystalsGilles Horowitz, Bernard Bachet, Abderrahim Yassar, Philippe Lang, Frederic Demanze, Jean-Louis Fave, Francis GarnierCite this: Chem. Mater. 1995, 7, 1337–1341Publication Date (Print):July 1, 1995Publication History Published online1 May 2002Published inissue 1 July 1995https://pubs.acs.org/doi/10.1021/cm00055a010https://doi.org/10.1021/cm00055a010research-articleACS PublicationsRequest...

High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate field-effect transistors operating at low voltages. Here, we report on a device gated with pure water. By replacing the gate dielectric by simple water droplet, produce transistor that entirely operates in mode of operation voltages lower than 1 V. This result creates opportunities for sensor applications using water-gated devices as transducing medium. Detailed facts importance...

Organic field-effect transistors (OFETs) provide an excellent means to study transport phenomena in organic semiconductors. These authors have prepared a series of vacuum-evaporated films sexithiophene and octithiophene (see Figure) with various grain size. Charge mobility, which increases size, was found be dependent on temperature small grains, but practically temperature-independent large-grain films.

Organic field-effect transistors, in which the active semiconductor is made of oligothiophenes various lengths, have been fabricated and characterized. A method developed to estimate mobility μ corrected for contact series resistance. The found increase by a factor nearly 100 from quaterthiophene (4T) octithiophene (8T). More importantly, increases quasilinearly with gate voltage. origin this bias dependence discussed. One explanation could be presence traps that limit charge transport....

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTPolymorphism and Charge Transport in Vacuum-Evaporated Sexithiophene FilmsB. Servet, G. Horowitz, S. Ries, O. Lagorsse, P. Alnot, A. Yassar, F. Deloffre, Srivastava, R. Hajlaoui, Cite this: Chem. Mater. 1994, 6, 10, 1809–1815Publication Date (Print):October 1, 1994Publication History Published online1 May 2002Published inissue 1 October 1994https://pubs.acs.org/doi/10.1021/cm00046a039https://doi.org/10.1021/cm00046a039research-articleACS...

n‐Type—electron transporting—conduction is demonstrated for Schottky diodes and field effect transistors based on N,N ′‐diphenyl‐3,4,9,10‐perylenetetracarboxylic‐dimide. The role of the electron‐injecting electrode discussed, as are potential improvements in performance offered by devices combining a p‐type semiconducting layer with an n‐type, electron transporting organic compound.

The performance of organic field-effect transistors (OFETs) has improved substantially in recent years. Their mobilities are now comparable to that hydrogenated amorphous silicon thin-film (TFTs). Both TFTs and OFETs operate the accumulation regime authors here develop a comprehensive model for this regime. They show that, case constant mobility, threshold voltage cannot be defined. observed practice is attributed gate-voltage-dependent mobility.

A model describing the current-voltage characteristics of organic thin-film transistors (TFTs) is presented. The based on trap distribution deduced from temperature-dependent measurements Au/alpha-sexithienyl (α6T)/Au symmetrical structures, which comprises a dominant single shallow level located near valence-band edge. Numerical and approximate analytical derivations saturation current density as function gate voltage have been made. From these calculations, dependence threshold parameters...

Metal-insulator-semiconductor field-effect transistors (MISFETs) based on organic semiconductors, mainly conjugated polymers and oligomers, have been reported recently. Unlike conventional MISFETs, these devices work through the modulation of an accumulation layer at semiconductor-insulator interface. A model for derived by changing classical equations according to this particular operating mode is proposed. The ohmic current, parallel channel due nonrectifying character source drain...

Growing organic semiconductors on dielectrics with different surface energies and dielectric constants results in striking changes of the film morphology (Figure, right). Ambipolar transport is reported pentacene transistors a PVA gate (left). The current–voltage characteristics correlate capacitance–voltage investigations metal–insulator–semiconductor structures.

For the fabrication of organic transistors sexithiophene (6T) is one most promising materials. Since high purity improves transistor performance 6T, FET described here was built on an ultrapure single crystal, shown in figure as a gray block. The characteristics this transistor—better than those FETs based evaporated polycrystalline sexithiophene—are presented. magnified image

End-substitution of quaterthiophene with hexyl groups leads to a highly soluble conjugated oligomer, α,ω-dihexylquaterthiophene (DH4T), which has been characterized for its thermal, structural, and electrical properties. Differential scanning calorimetry indicates the existence 3-dimension (3D)-to-mesophase transition, occurring at 84 °C, below melting temperature material (179 °C). X-ray diffraction patterns performed on crude thermally treated films DH4T confirm smectic phase two spacings...

La conductivite et la mobilite d'effet de champ du sexithiopheme non substitue (6T) di-alkyl-sexithiophene en bout chaine (DH6T) ont ete mesurees fonction temperature. Pour des temperatures superieures a 150 K, on trouve une thermiquement activee, alors que montre energie d'activation dependante tension grille. A forte haute temperature, observe saturation champ. Les donnees analysees dans le cadre d'un modele piegeages depiegages multiples. On ainsi determine distribution niveaux localises...

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTExciton Coupling Effects in the Absorption and Photoluminescence of Sexithiophene DerivativesA. Yassar, G. Horowitz, P. Valat, V. Wintgens, M. Hmyene, F. Deloffre, Srivastava, Lang, GarnierCite this: J. Phys. Chem. 1995, 99, 22, 9155–9159Publication Date (Print):June 1, 1995Publication History Published online1 May 2002Published inissue 1 June 1995https://pubs.acs.org/doi/10.1021/j100022a031https://doi.org/10.1021/j100022a031research-articleACS...