A5023035991- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- Liquid Crystal Research Advancements
- Photonic Crystals and Applications
- Perovskite Materials and Applications
- Photonic and Optical Devices
- ZnO doping and properties
- Semiconductor Lasers and Optical Devices
- Electrowetting and Microfluidic Technologies
- Photochemistry and Electron Transfer Studies
- Silicon and Solar Cell Technologies
- Surfactants and Colloidal Systems
- Optical Coatings and Gratings
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Ferroelectric and Piezoelectric Materials
- Polydiacetylene-based materials and applications
- Ga2O3 and related materials
- Advanced Thermoelectric Materials and Devices
- Conducting polymers and applications
- Green IT and Sustainability
- Organic Light-Emitting Diodes Research
Daegu Gyeongbuk Institute of Science and Technology
2016-2025
Ewha Womans University
2022
Ewha Womans University Medical Center
2022
Cheongju University
2022
Government of the Republic of Korea
2019
Daegu University
2015
Kwangwoon University
2011
Pohang University of Science and Technology
2002
Using an appropriate SeS<sub>2</sub>/Se weight ratio, band gap grading was realized. By increasing the value of<italic>V</italic><sub>OC</sub>through in depletion region, a record<italic>V</italic><sub>OC</sub>deficit of 0.576 V and efficiency 12.3% were obtained.
We fabricated CZTSSe thin films using optimized SLG-Mo/Zn/Cu/Sn (MZCT) as a stacked structure and described the phenomenon of Zn elemental volatilization MZCT structure.
Abstract For kesterite copper zinc tin sulfide/selenide (CZTSSe) solar cells to enter the market, in addition efficiency improvements, technological capability produce flexible and large-area modules with homogeneous properties is necessary. Here, we report a greater than 10% for cell area of approximately 0.5 cm 2 8% larger certified CZTSSe cells. By designing thin multi-layered precursor structure, formation defects defect clusters, particularly tin-related donor defects, controlled, open...
Abstract Cu 2 ZnSnS 4 (CZTS)‐based materials have a useful band gap and high absorption coefficient; however, their power conversion efficiency is low compared with that of CdTe Cu(In,Ga)Se ‐based solar cells. Two the factors strongly affect CZTS cell characteristics are MoS layer presence defects. In this study, Mo back‐contact layers were annealed to control formation Na content in before absorber precursor was deposited. The increase oxygen suppressed formation. addition, diffusion during...
The improvement of the efficiency Cu2ZnSn(S,Se)4 (CZTSSe)-based solar cells requires formation high-grain-sized pure CZTSSe throughout film. We have successfully selenized precursor samples Cu/SnS/ZnS/Mo/Soda lime glass in an almost sealed selenium furnace. Owing to presence confined and high-pressure Se vapor furnace, easily diffused into samples, high-quality Se-rich absorbers were obtained. To understand effect growth mechanism our annealing system, this study examines phase evolution...
Abstract Although Cu 2 ZnSnS 4 (CZTS) has attracted attention as an alternative absorber material to replace CuInGaSe (CIGS) in solar cells, the current level of understanding its characteristic loss mechanisms is not sufficient for achieving high power conversion efficiency. In this study, which aimed minimize losses across devices, we examined relations between compositional ratio distribution layer, subsequent defect formation, and surface electrical characteristics. A high‐temperature...
Abstract Improving the efficiency of kesterite (Cu 2 ZnSn(S,Se) 4 ; CZTSSe) solar cells requires understanding effects Na doping. This paper investigates these by applying a NaF layer at various positions within precursors. The position is important because produces Na‐related defects in absorber and suppresses formation intrinsic defects. By investigating precursors with positions, sulfo‐selenization mechanism characteristics defect are confirmed. Applying onto Zn CZTSSe precursor limits...
Abstract Herein, a liquid‐assisted grain growth (LGG) mechanism for vacuum‐processed Cu 2 ZnSn(S 1− x Se ) 4 (CZTSSe) absorber that is enabled by the presence of liquid phase containing predominantly Cu, Sn, and (L‐CTSe) suggested to explain large size up ≈6 µm obtained at low temperatures, such as 480 °C. In this system, LGG plays key role in achieving CZTSSe absorber, but residual L‐CTSe, factor LGG, deteriorates device performance. L‐CTSe residue can possibly remain when using metal...
Abstract Understanding the stress-induced phenomena is essential for improving long-term application of flexible solar cells to non-flat surfaces. Here, we investigated electronic band structure and carrier transport mechanism Cu 2 ZnSn(S,Se) 4 (CZTSSe) photovoltaic devices under mechanical stress. Highly efficient CZTSSe were fabricated controlling Na incorporation. The was deformed with stress as gap, valence edge, work function changed. Electrical properties bent surface probed by Kelvin...
Antimony selenide (Sb2Se3) has recently received much attention as a potential candidate for light absorbers in thin-film photovoltaic technologies because of its earth abundance, nontoxicity, and promising electrical optical...
The incorporation of MoSe 2 forms a potential barrier at the back-contact interface, enhancing interfacial charge transport in Sb Se 3 solar cells. Increased current flow and reduced carrier recombination enable improvement open-circuit voltage.
In this paper, we propose that the microstructural control of (<italic>hk</italic>1) preferentially oriented Sb<sub>2</sub>Se<sub>3</sub>films from flat films to rod arrays can improve their photovoltaic efficiency by maximizing carrier transport characteristics.
Numerous methods have been employed for utilizing inorganic thin films to improve the stability of transparent photovoltaics (TPVs). However, use these was restricted due limitations involving physical dimensions, complex fabrication processes, visible transparency, and photovoltaic performance. In this study, a novel approach TPVs based on wide band gap thin-film solar cell devices first proposed. This an Sb2S3 absorber optical optimization planar-type device structure. High-quality...
Nanoporous p-type semiconductor CZTS thin films prepared by solution-based process were used for the facile fabrication of 3D p–n junction solar cells between and n-type CdS.
Recently, highly efficient CZTS solar cells using pure metal precursors have been reported, and our group created a cell with 12.6% efficiency, which is equivalent to the long-lasting world record of IBM. In this study, we report new secondary phase formation mechanism in back contact interface. Previously, CZTSSe decomposition Mo has proposed explain void Mo-back region. sulfo-selenization system, voids phases well explained by unique wetting properties liquid above peritectic reaction...
Abstract Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells have resource distribution and economic advantages. The main cause of their low efficiency is carrier loss resulting from recombination photo‐generated electron hole. To overcome this, it important to understand electron‐hole behavior characteristics. determine the separation characteristics, we measured surface potential local current in terms absorber depth. elemental variation intragrains (IGs) at grain boundaries (GBs) caused a band edge...