A5070735615- Electron and X-Ray Spectroscopy Techniques
- Advancements in Photolithography Techniques
- Semiconductor materials and devices
- Advanced Electron Microscopy Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Ion-surface interactions and analysis
- Surface and Thin Film Phenomena
- X-ray Spectroscopy and Fluorescence Analysis
- Semiconductor materials and interfaces
- Surface Roughness and Optical Measurements
- Ga2O3 and related materials
- Silicon and Solar Cell Technologies
- Corrosion Behavior and Inhibition
- Advanced Materials Characterization Techniques
- Photorefractive and Nonlinear Optics
- Force Microscopy Techniques and Applications
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides
- Advanced Energy Technologies and Civil Engineering Innovations
- Ferroelectric and Piezoelectric Materials
- Thermography and Photoacoustic Techniques
- Electrochemical Analysis and Applications
- Non-Destructive Testing Techniques
- Advanced X-ray Imaging Techniques
- GaN-based semiconductor devices and materials
Lomonosov Moscow State University
2016-2025
Moscow State University
2001-2024
Russian Academy of Sciences
2000-2014
Institute of Microelectronics Technology and High Purity Materials
1995-2011
Yunnan University
2009
A technique for the accurate determination of surface potential US and its evolution during irradiation, is proposed. The based on detecting both backscattered (BSE) secondary electrons (SE) in a scanning electron microscope (SEM). (BSE+SE) spectra are measured using compact, highly sensitive electrostatic toroidal spectrometer (ETS), specially adapted SEM applications. use an ETS analyzer set deducing from (SE+BSE) irradiated insulators introduced here. determined, either maximum energy...
Abstract A backscattered electron energy spectrometer, based on a toroidal analyser and an annular detector, has been devised adapted for use in scanning microscope. Computer simulations have carried out equipotentials trajectories of electrons the deflector, which permit optimisation characteristics special applications. Based upon these results, device built its efficiency is demonstrated by selected images multilayered structure series recorded spectra.
In a scanning electron microscope, electron-beam irradiation of insulators may induce strong electric field due to the trapping charges within specimen interaction volume. On one hand, this modifies trajectories beam electrons subsequently entering specimen, resulting in reduced penetration depth into bulk specimen. other it leads acceleration vacuum emitted secondary (SE) and also distortion their angular distribution. Among others, consequences concern an anomalous contrast SE image. This...
A method is described that allows the trapping charge kinetics in insulating materials during their electron irradiation a scanning microscope (SEM) to be studied and total trapped evaluated. The consists analyzing leakage displacement currents measured simultaneously, after irradiation, using an arrangement adapted SEM. dynamic properties of glass-ceramic are investigated time constants for charging discharging processes By correlating currents, yield σ also determined.
In this paper, a number of drawbacks and contradictions the existing models charging dielectric targets under irradiation with defocused electron beams moderate energies (0.2–20 keV) are briefly noted. order to streamline coordinate all experimental results theoretical information concerning phenomenon irradiation, it was necessary reconsider some postulates standard model based on simple dependence emission coefficient σ irradiating energy E0. It is shown that decisive role in establishing...
SUMMARY The application of automatic image analysis techniques in the SEM to massive samples with complex morphology requires a careful choice imaging mode and detector geometry used. Thus quantitative conjugated surfaces summary images, derived from backscattered, secondary, transmitted electron cathodo‐luminescent signals, as well dedicated processing algorithms. Careful attention must also be paid problems obtaining matching these various images.
SUMMARY The combination of a scanning electron microscope and microcomputer can be used to carry out automatic, quantitative, morphological analysis wide range samples. A system implemented around commercially available 8‐bit computer interface hardware is described. Computerized shape most accurately carried by the use numerically determined Fourier transforms high contrast bright field transmitted image; however, Walsh functions offer very significantly faster processing times on smaller systems.
Abstract Methods used in metrology of two‐dimensional magnetic microfields and based on direct interaction the electron beam scanning microscope (SEM) with studied fields are described. An analytical expression for calculating value field is presented. The errors applicability methods have been estimated. concepts discussed illustrated by experimental results measurements some types statistical dynamic stray fields.