A5074648407- Transition Metal Oxide Nanomaterials
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Advancements in Battery Materials
- Supercapacitor Materials and Fabrication
- Advanced Memory and Neural Computing
- Electrocatalysts for Energy Conversion
- Advanced battery technologies research
- Magnetic and transport properties of perovskites and related materials
- Electronic and Structural Properties of Oxides
- Advanced Photocatalysis Techniques
- Advanced Battery Materials and Technologies
- Diamond and Carbon-based Materials Research
- MXene and MAX Phase Materials
- Copper-based nanomaterials and applications
- Advanced Condensed Matter Physics
- Graphene research and applications
- Thermochemical Biomass Conversion Processes
- Force Microscopy Techniques and Applications
- High-Temperature Coating Behaviors
- Advancements in Solid Oxide Fuel Cells
- Catalytic Processes in Materials Science
- Catalysis and Oxidation Reactions
- Photoacoustic and Ultrasonic Imaging
Chengdu University
2025
Yancheng Institute of Technology
2016-2024
Tencent (China)
2024
Nanjing Normal University
2019
National Synchrotron Radiation Laboratory
2012-2018
University of Science and Technology of China
2011-2018
Institute of High Energy Physics
2013
Tuning the metal insulator transition (MIT) behavior of VO2 film through interfacial strain is effective for practical applications. However, mechanism strain-modulated MIT still under debate. Here we directly record dynamics ultrathin on TiO2 substrate and reveal intrinsic modulation process by means synchrotron radiation first-principles calculations. It observed that obtained films can be modulated continuously via strain. The relationship between phase temperature evolution established...
VO2 epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al2O3 (0001) substrate. The shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character closely associated defects such as oxygen vacancies. By controlling growth condition, temperature can be tuned through modifying content of role vacancies behavior this discussed in framework hybridization theory...
Abstract The mechanism for regulating the critical temperature (T C ) of metal-insulator transition (MIT) in ions-doped VO 2 systems is still a matter debate, particular, unclear roles lattice distortion and charge doping effects. To rule out effect on regulation T , we investigated Ti 4+ -doped (Ti x V 1-x O system. It was observed that samples first slightly decreased then increased with increasing concentration. X-ray absorption fine structure (XAFS) spectroscopy used to explore...
We presented a high-sensitivity temperature detection using an implanted single nitrogen-vacancy (NV) center array in diamond. The high-order thermal Carr-Purcell-Meiboom-Gill (TCPMG) method was performed on the NV diamond static magnetic field. demonstrated that under small detunings for two driving microwave frequencies, oscillation frequency of induced fluorescence equals approximately average fields. On basis conclusion, zero-field splitting D and corresponding could be determined....
In this work, high-quality VO2 epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film device, we observed that the infrared transmittance and resistance of could be dynamically controlled by external bias voltage. Based hysteretic switching effect in range, optoelectronic memory device was achieved. This operated under "electrical writing–optical reading" mode, which shows...
External controlling the phase transition behavior of vanadium dioxide is important to realize its practical applications as energy-efficient electronic devices. Because relatively high temperature 68 °C, central challenge for VO2-based electronics, lies in finding an energy efficient way, modulate a reversible and reproducible manner. In this work, we report experimental realization p–n heterojunctions by growing VO2 film on p-type GaN substrate. By adding bias voltage junction,...
The mechanism for the decreasing critical temperature (T(C)) of metal-insulator transition (MIT) in vanadium dioxide (VO2) by tungsten (W) doping is a matter debate. Here, to clarify correlation between W and T(C), electronic geometrical structures around V atoms W(x)V(1-x)O2 samples are systematically investigated X-ray absorption fine structure (XAFS) spectroscopy. evidence electron W(6+) ions VO2 obtained from reduction V(4+) V(3+) ions. This kind has been considered favor MIT process....
Electrolyte gating with ionic liquids (IL) on correlated vanadium dioxide (VO 2 ) nanowires/beams is effective to modulate the metal‐insulator transition (MIT) behavior. While for macrosize VO film, treatment shows different phase modulation process and intrinsic mechanism still not clear, though oxygen‐vacancy diffusion channel always adopted explanation. Herein, dynamic of electrolyte gated films investigated oxygen vacancies formation, diffusion, recovery at IL/oxide interface are...
We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic and new insulating are successively observed at room temperature as the doping concentration increases. It is suggested that polarized charges from doped hydrogens play an important role. These gradually occupy V3d-O2p hybridized orbitals consequently modulate filling crystal conduction band-edge states, which eventually evolve into valence states. This demonstrates exceptional sensitivity...
Bismuth (Bi) exhibits a high theoretical capacity, excellent electrical conductivity properties, and remarkable interlayer spacing, making it an ideal electrode material for supercapacitors. However, during the charge discharge processes, Bi is prone to volume expansion pulverization, resulting in decline capacitance. Deposition of nonmetal on its surface considered effective way modulate morphology electronic structure. Herein, we employed chemical vapor deposition technique fabricate...
VO2 thin films with large-area were prepared on Al2O3 substrates by a simple sol-gel method. After an annealing treatment under low vacuum condition, all the showed preferred growth direction and exhibited excellent semiconductor-metal transition (SMT) characteristics. The structure electrical properties of obtained investigated systematically. Raman spectra, X-ray diffraction absorption spectra measurements pointed out that film ${\rm A}{\rm l}_{\rm 2} {\rm O}_{\rm 3} ( {{\rm 10}\overline...