A5041990486- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Surface Modification and Superhydrophobicity
- Advancements in Battery Materials
- Nanowire Synthesis and Applications
- Supercapacitor Materials and Fabrication
- Advanced battery technologies research
- Advanced Battery Materials and Technologies
- Photorefractive and Nonlinear Optics
- Microwave Dielectric Ceramics Synthesis
- Semiconductor Quantum Structures and Devices
- Advanced Sensor and Energy Harvesting Materials
- Machine Learning in Materials Science
- Fluid Dynamics and Heat Transfer
- ZnO doping and properties
- Aerosol Filtration and Electrostatic Precipitation
- Fluid Dynamics and Thin Films
- Ferroelectric and Piezoelectric Materials
Zhejiang University
2015-2020
Hangzhou Academy of Agricultural Sciences
2017
Xi'an Jiaotong University
2014-2015
Wuhan University of Technology
2009
Defects usually play an important role in tailoring various properties of two-dimensional materials. monolayer molybdenum disulphide may be responsible for large variation electric and optical properties. Here we present a comprehensive joint experiment-theory investigation point defects prepared by mechanical exfoliation, physical chemical vapour deposition. Defect species are systematically identified their concentrations determined aberration-corrected scanning transmission electron...
In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and force microscope. atomically resolved images obtained annular dark-field scanning transmission electron field-effect transistors fabricated layered exhibit p-type semiconducting behaviors with...
Understanding the microscopic mechanism of chemical vapor deposition (CVD) growth two-dimensional molybdenum disulfide (2D MoS2) is a fundamental issue towards function-oriented controlled growth. In this work, we report results on revealing kinetics 2D MoS2 via capturing nucleation seed, evolution morphology, edge structure and terminations at atomic scale during CVD using transmission electron microscopy (TEM) scanning (STEM) studies. The direct few- mono-layer onto graphene based TEM...
Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems high melting points low chemical reactivity oxide feedstocks preparation high-quality metal/semiconductor (M/S) TMDC vdW Here, for first time, we report M/S heterostructure NbS2/MoS2 via a...
Abstract Controlled stacking of different two‐dimensional (2D) atomic layers will greatly expand the family 2D materials and broaden their applications. A novel approach for synthesizing MoS 2 /WS heterostructures by chemical vapor deposition has been developed. The successful synthesis pristine is attributed to using core–shell WO 3− x /MoO nanowires as a precursor, which naturally ensures sequential growth WS . obtained exhibited high crystallinity, strong interlayer interaction, mobility,...
Abstract In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS 2 ‐WS , ‐MoSe ‐WSe and WSe are synthesized so far via chemical vapor deposition (CVD) method. Engineering morphology of domains including size shape, however, still remains challenging. Here, a one‐step CVD strategy on engineering WS within...
Direct observation of atomic migration both on and below surfaces is a long-standing but important challenge in materials science as diffusion one the most elementary processes essential to many vital material behaviors. Probing kinetic pathways, including metastable or even transition states involved down scale, holds key underlying physical mechanisms. Here, we applied aberration-corrected transmission electron microscopy (TEM) demonstrate direct atomic-scale imaging quasi-real-time...
<italic>In situ</italic> growth of hierarchical Gra/CNT was achieved for a Si@Gra@CNT composite, and the composite exhibit improved electrochemical performance as LIB anode.
As a common type of structural defect, grain boundaries play an important role in tailoring the physical and chemical properties bulk crystals their 2D counterparts such as graphene MoS<sub>2</sub>.
Herein we report the successful doping of tellurium (Te) into molybdenum disulfide (MoS2) monolayers to form MoS2x Te2(1-x) alloy with variable compositions via a hydrogen-assisted post-growth chemical vapor deposition process. It is confirmed that H2 plays an indispensable role in Te substitution as-grown MoS2 monolayers. Atomic-resolution transmission electron microscopy allows us determine lattice sites and concentration introduced atoms. At relatively low concentration, only substituted...
Abstract Controlled stacking of different two‐dimensional (2D) atomic layers will greatly expand the family 2D materials and broaden their applications. A novel approach for synthesizing MoS 2 /WS heterostructures by chemical vapor deposition has been developed. The successful synthesis pristine is attributed to using core–shell WO 3− x /MoO nanowires as a precursor, which naturally ensures sequential growth WS . obtained exhibited high crystallinity, strong interlayer interaction, mobility,...
Mirror twin boundaries (MTBs) have brought intriguing one-dimensional physics into the host 2D crystal. In this letter, we reported a chalcogen atom exchange route to induce MTBs as-formed MoS2 monolayers via post-synthesis tellurium doping. Results from annular dark-field scanning transition electron microscope (ADF-STEM) characterizations revealed that substituted sulfur sublattices of preferentially around edge areas. A large number in configuration 4|4P-Te was induced therein. Analysis...
The atomic motion of adatom and defects is a fundamental physics processes surface diffusion involved in phase formation, epitaxial growth heterogeneous catalysis. This particularly important for surface-science-oriented applications novel two-dimensional crystals where the pathway material specific. In this letter we combine annular dark field scanning transmission electron microscopy (ADF-STEM) with 2D transition metal dichalcogenides (TMDs) system to demonstrate direct observation kinetic...