A5087542698- Chalcogenide Semiconductor Thin Films
- Heusler alloys: electronic and magnetic properties
- Advanced Semiconductor Detectors and Materials
- Quantum Dots Synthesis And Properties
- Advanced Chemical Physics Studies
- Semiconductor materials and interfaces
- Solid-state spectroscopy and crystallography
- Silicon and Solar Cell Technologies
- ZnO doping and properties
- Spectroscopy and Quantum Chemical Studies
- Acoustic Wave Resonator Technologies
- Advanced Thermoelectric Materials and Devices
- Superconductivity in MgB2 and Alloys
- Rare-earth and actinide compounds
- Inorganic Chemistry and Materials
- Boron and Carbon Nanomaterials Research
- Perovskite Materials and Applications
- Atomic and Molecular Physics
- Spectroscopy and Laser Applications
- X-ray Spectroscopy and Fluorescence Analysis
- Mechanical and Optical Resonators
- Thermal Expansion and Ionic Conductivity
- Intermetallics and Advanced Alloy Properties
- Crystal Structures and Properties
- Phase-change materials and chalcogenides
Tripura University
2014-2024
Jadavpur University
2001-2007
Kurukshetra University
1970-1998
Dayanand Medical College & Hospital
1987
The equation of continuity has been written for a graded band-gap semiconductor taking into account the effect band-edge gradients and variation radiative recombination lifetime with position. is then solved to give value excess minority carriers at point in such specimen. surface states included through appropriate boundary conditions. These expressions are deduced which space-charge free as result inhomogeneous doping, i. e., doping being position dependent direction gradients. resulting...
The minority carrier reflecting properties of the high-low junction have been studied, taking into account heavy doping effects. It has observed that leakage velocity attains a minimum value for particular impurity concentration in heavily doped region, when an empirical relationship giving bandgap narrowing as function silicon is utilized.
Ab initio based configuration interaction calculations using relativistic effective core potentials and compatible basis sets have been performed to study the electronic spectrum of silicon monosulfide molecule. Potential energy curves low-lying states SiS computed. Spectroscopic properties many observed such as X1Σ+, a3Σ+, d3Δ, b3Π, C1Σ-, e3Σ-, D1Δ, A1Π, E1Σ+ up 42 000 cm-1 calculated compared. The ground state is represented mainly by ...π4 (74%) ...π3π* (12%) configurations with re =...
The authors have discussed earlier the photomagnetoelectric effect in graded-band-gap semiconductors assuming symmetrical band-edge gradients. present paper rewrites continuity equation under asymmetric gradients, and includes effects of position-dependent minority carrier lifetime, electron hole mobilities, effective masses. A study excess carriers as a function position direction graded composition indicates that steady photoexcitation, distribution total concentration are markedly...
Using Gärtner's equations, effect of sample thickness on the Cember potential (VD) for strong and weak absorption is discussed. It has been found that absorption, as increases, VD tends to a saturation value which decreases front-surface recombination velocity increases. For initially behavior depends upon front back surface velocities, but large it becomes independent them increases linearly with thickness. When compared velocity, sign reversal can take place. Expressions are obtained VD(i)...
The electronic spectrum of the silicon monoxide molecule has been studied theoretically by using ab initio-based multireference singles and doubles configuration interaction calculations, which include effective core potentials atoms. Potential energy curves all 18 states, correlate with lowest dissociation limit Si(3Pg) + O(3Pg), are constructed. Spectroscopic parameters, namely, Te, re, ωe a large number bound Λ-S states molecule, estimated compared available experimental other theoretical...
Ab initio based configuration interaction calculations have been carried out to study the low-lying electronic states and spectroscopic properties of heaviest nonradioactive silicon chalcogenide molecule its monopositive ion. Spectroscopic constants potential energy curves both SiTe SiTe+ within 5 eV are reported. The calculated dissociation energies 4.41 3.52 eV, respectively. Effects spin−orbit coupling on spectrum species studied in detail. splitting between two components ground state is...