A5101573728- Photonic and Optical Devices
- Advanced Photonic Communication Systems
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Optical Network Technologies
- Silicon Carbide Semiconductor Technologies
- Nanoparticle-Based Drug Delivery
- Neural Networks and Reservoir Computing
- Geomechanics and Mining Engineering
- Structural Response to Dynamic Loads
- Extracellular vesicles in disease
- Optical Coatings and Gratings
- Nanofabrication and Lithography Techniques
- Fire effects on concrete materials
- Ferroptosis and cancer prognosis
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
- Photonic Crystals and Applications
- Civil and Geotechnical Engineering Research
- Advanced Fiber Laser Technologies
- Structural Behavior of Reinforced Concrete
- Geoscience and Mining Technology
- ZnO doping and properties
- Thin-Film Transistor Technologies
Gwangju Institute of Science and Technology
2019-2024
Asan Medical Center
2024
University of Ulsan
2024
Ulsan College
2024
Korea Institute of Energy Research
1988
Uptake and intracellular trafficking of nanoparticles are tightly regulated by their interactions with cellular organelles physiological microenvironment. Although the dynamic physicochemical reactions at interface cells ultimately determine distribution fate, microscopic tracing quantitative analysis have been hampered limited resolution associated individual nanoparticle trafficking. Herein, we report spatiotemporal investigations on autophagic clearance biodegradable iron oxide-silica...
A silicon photonic 3-dB power splitter is one of the essential components to demonstrate large-scale integrated circuits (PICs), and can be utilized implement modulators, 1 × 2 switches, N splitters for various PIC applications. In this paper, we reported design experimental demonstration low-loss broadband splitters. The was realized by adiabatically tapered rib waveguides with 60-nm shallow etches. shallow-etched offered strong coupling relaxed critical dimensions (a taper tip width 200 nm...
A 2 × 3-dB coupler is one of the essential photonic components, as a building block Mach-Zehnder interferometers, to realize large-scale integrated circuits. Unlike typical couplers based on direction or multimode interference couplers, adiabatic offer various advantages such broadband operation and superior fabrication tolerance thanks their unique operating mechanism mode evolution. However, an typically requires long device length for ideal without excitations unwanted modes. Here, we...
Mode-division multiplexing (MDM) is an attractive solution for future on-chip networks to enhance the optical transmission capacity with a single laser source. A mode-division reconfigurable add/drop multiplexer (ROADM) one of key components construct flexible and complex MDM systems. In this paper, we report on novel scheme ROADM mode-selective silicon photonic MEMS (micro-electromechanical system) switches. With device, data carried by any mode-channels can be rerouted or switched at...
In this work, nitrogen implantation conditions for a vertical <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 MOSFET with planar gate have been optimized to maximize the power figure of merit (PFOM) by performing extensive 2-D process and device technology computer-aided design (TCAD) simulations. The are as energy 300 keV maximum concentration...
We report on low loss and broadband Y-junetions based adiabatically tapered silicon rib waveguides, compatible with standard photonics foundry process. The fabricated device exhibits a compact foot print of 19 pm (taper length), broad bandwidth over 50 nm, excess 0.09 dB.
We report a 2x2 3-dB adiabatic coupler with the gap of 400 nm and taper length 90 μm. The designed curved enables 8-times shorter than conventional linear taper. fabricated device exhibits 50 ± 2% power splitting ratio over wavelength range from 1580 to 1620 nm.
In this work, we investigate the effect of a Si separator on performance bottom dielectric isolated (BDI) forksheet field transistor (FSFET) using our in-house TCAD process emulator and device simulator. The is implemented with 3D multi-level-set method relevant fabrication followed. Two versions BDI FSFET without are generated one shows better etch profile. electrical characteristics each simulated through simulator, G-Device. From simulation results, it clearly demonstrated that negligibly...