A5044208994- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Metal and Thin Film Mechanics
- Ion-surface interactions and analysis
- Optical Coatings and Gratings
- Thin-Film Transistor Technologies
Nagoya University
2019
A simple structure with high breakdown voltage and a low leakage current of vertical GaN p–n diode on free-standing substrate is demonstrated. We describe edge termination that has drift layer etched deeply vertically. device simulation revealed the electric field was more relaxed at applied uniformly in entire increasing etching depth. fabricated simulated succeeded reducing improving voltage. With this structure, stable avalanche can be observed.
A vertical p–n diode with a simple edge termination structure on GaN free-standing substrate is demonstrated. The of this device terminated simply by etching drift layer deeply and vertically. simulation revealed that the electric field at was more relaxed uniformly applied mesa deeper than depletion region. fabricated showed low leakage current avalanche capability, its breakdown characteristics could be reproduced many times. By emission microscopy observation, we found there no side wall...
Abstract We fabricated p−n diodes under different growth pressures on free-standing GaN substrates of the same quality and observed a noteworthy difference in reverse leakage current. A large current was generated by nanopipes, which were formed from screw dislocations homoepitaxial layer. There two types dislocation this study. The first type already existed substrate other newly epilayer coalescence edge mixed dislocations. An increase pressure suppressed transformation into led to...