A5007445627- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Graphene research and applications
- MXene and MAX Phase Materials
- Radiomics and Machine Learning in Medical Imaging
- Surface and Thin Film Phenomena
- Molecular Junctions and Nanostructures
- Glioma Diagnosis and Treatment
- Boron and Carbon Nanomaterials Research
- Medical Imaging Techniques and Applications
Washington University in St. Louis
2019
Michigan Technological University
2013-2016
South Dakota School of Mines and Technology
2016
One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels tunneling field-effect transistors. We demonstrate that currents be modulated at room temperature by tuning the lengths QD-BNNTs and gate potentials. Our discovery will inspire creative use nanostructured metals insulators for future electronic devices.
Numerous recent works highlight the limited utility of established tumor cell lines in recapitulating heterogeneity tumors patients. More realistic preclinical cancer models are thought to be provided by transplantable, patient-derived xenografts (PDXs). The inter- and intratumor PDXs, however, presents several challenges developing optimal quantitative pipelines assess response therapy. objective this work was develop optimize image metrics for <sup>18</sup>F-FDG PET combination docetaxel...
Although devices have been fabricated displaying interesting single-electron transport characteristics, there has limited progress in the development of tools that can simulate such based on their physical geometry over a range bias conditions up to few volts per junction. In this work, we present multi-island simulator, MITS, simulator tunneling takes into account geometrical and material parameters, span low high source-drain biases. First, capabilities MITS are demonstrated by modeling...
Abstract Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used flexible tunneling channels room The electrical insulating BNNTs one-dimensional (1D)...
Controlled transport of electrons through tunnel junctions and their confinement by mesoscopic structures have opened up immense possibilities single-electron device (SED) applications. The realization a practical working SED has remained challenging largely owing to the poor understanding physics operation singe-electron tunneling devices, especially those with multiple nanometer-sized islands. In this simulation study one-dimensional (1D) multi-island chains, we propose physical mechanisms...