A5008075431- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- Hate Speech and Cyberbullying Detection
- Internet Traffic Analysis and Secure E-voting
- Digital Communication and Language
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Natural Language Processing Techniques
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Centre National de la Recherche Scientifique
2021-2024
Université Polytechnique Hauts-de-France
2021-2024
École Centrale de Lille
2021-2024
Institut d'électronique de microélectronique et de nanotechnologie
2021-2024
Université de Lille
2021-2024
Georgia Institute of Technology
2022-2023
University of Alberta
2023
High power electronics using wide bandgap materials are maturing rapidly, and significant market growth is expected in a near future. Ultra materials, which have an even larger than GaN (3.4 eV), represent attractive choice of to further push the performance limits devices. In this work, we report on fabrication AlN/AlGaN/AlN high-electron mobility transistors (HEMTs) 50% Al-content AlGaN channel, has much wider commonly used channel. The structure was grown by metalorganic chemical vapor...
Abstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well high temperature stability of devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures promising candidates meet these criteria. Furthermore, possibility choose Al molar fraction AlGaN paves way more tunable heterostructures. In this study, electronic transport properties channel grown on silicon...
In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects reduction in the GaN channel thickness as well AlGaN barrier and composition structural electrical properties studied. material analysis involved high-resolution x-ray diffraction, atomic force microscopy, cross-sectional transmission microscopy. a first HEMT structures with an aluminum content 30% barrier,...
Hate speech detection has been the subject of high research attention, due to scale content created on social media. In spite attention and sensitive nature task, privacy preservation in hate remained under-studied. The majority focused centralised machine learning infrastructures which risk leaking data. this paper, we show that using federated can help address concerns are inherent while obtaining up 6.81% improvement terms F1-score.
The rapidly increasing power demand, downsizing of electronics and material specific limitation silicon has led to development AlGaN/GaN heterostructures. Commercial GaN devices are best available for radio frequency (RF) high voltage switching applications. Emerging AlxGa1-xN channel based heterostructures promising enhance the limits next generation devices. In this work, we report on study electrical performance AlGaN HEMTs-on-Silicon using various Al content. fabricated exhibited...
Hate speech detection has been the subject of high research attention, due to scale content created on social media. In spite attention and sensitive nature task, privacy preservation in hate remained under-studied.The majority focused centralised machine learning infrastructures which risk leaking data. this paper, we show that using federated can help address concerns are inherent while obtaining up 6.81% improvement terms F1-score.
AlxGa1-xN heterojunction FETs (HFETs) have been an eye catcher for high voltage power electronics with its potential to outperform the predecessors by virtue of critical breakdown field material, which can be tuned varying Al mole-fraction. In this work, we demonstrate Al0.23Ga0.77N channel HFETs on bulk AlN a maximum drain current density > 300 mA/mm and specific Ron = 4 mΩ.cm2. A buffer electric >10 MV/cm was measured. robustness comparison thin GaN close their respective hard voltages is...
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors silicon designed for high-voltage operation. The configuration was achieved with a p-gallium nitride (p-GaN) cap layer below gate, enabling positive threshold voltage higher than +1 V. buffer structure based AlN/GaN superlattices (SLs), delivering vertical breakdown close to 1.5 kV low leakage current all way 1200 With grounded substrate, hard at VGS = 0 V is 1.45 kV, corresponding an...
The use of emojis affords a visual modality to, often private, textual communication.The task predicting however provides challenge for machine learning as emoji tends to cluster into the frequently used and rarely emojis.Much research on has focused high resource languages conceptualised around traditional server-side approaches.However, approaches private communication can introduce privacy concerns, these require all data be transmitted central storage.In this paper, we seek address dual...
The rapidly increasing power demand, downsizing of electronics and material specific performance limitation silicon have led to the development AlGaN/GaN heterostructures for high applications. In this frame, emerging Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> N channel based show promising features next generation electronics. work, we propose study breakdown field...
The use of emojis affords a visual modality to, often private, textual communication. task predicting however provides challenge for machine learning as emoji tends to cluster into the frequently used and rarely emojis. Much research on has focused high resource languages conceptualised around traditional server-side approaches. However, approaches private communication can introduce privacy concerns, these require all data be transmitted central storage. In this paper, we seek address dual...