This study achieved a nanocomposite structure of nickel oxide (NiO)/titanium dioxide (TiO₂) heterojunction on TiO₂ film surface. The photocatalytic activity this evaluated by decomposing methylene blue (MB) solution was strongly correlated to the conductive behavior NiO film. A p-type high concentration in contact with native n-type film, which resulted strong inner electrical field effectively separate photogenerated electron-hole pairs, exhibited much better than controlled In addition,...

Amorphous titanium oxide (a-TiOx:OH) films prepared by plasma-enhanced chemical-vapor deposition at 200 and 25 °C are in turn deposited onto the GaN-based light-emitting diode (LED) to enhance associated light extraction efficiency. The refractive index, porosity, photocatalytic effect of correlated strongly with temperatures. efficiency is enhanced a factor ∼1.31 over that uncoated LEDs exhibited an excellent property after external UV irradiation. increase related reduction Fresnel...

Al–N codoped ZnO films prepared via cosputtering technology were postannealed at 450 °C for 30 min under ambient vacuum and nitrogen. The extrinsic impurities in these annealed samples, resulting evolutions on the carriers radiation emissions, investigated through their photoluminescence spectra Hall-effect measurements. It was found that donor-acceptor-pair emission related to VZn–AlZn transition 2.86 eV predominated over defect-transition luminescence room-temperature (RTPL) spectrum of...

In this study, we utilize the RF magnetron sputtering system to deposit indium tin oxide (ITO) conductive transparent film with low resistivity and high light transmittance polyethylene tetephthalate (PET) plastic substrate measure film's bending property reliability at different tensile/compressive strain curvatures as well flexibility after cycling bending. The results show that critical corresponded significant increase in resistance of 150 nm-thick ITO deposited onto PET under tensile...

Al–N codoped zinc oxide films were prepared using a radio-frequency magnetron cosputtering system at room temperature. AlN and ZnO materials employed as the cosputtered targets. The as-deposited various theoretical atomic ratios [Al∕(Al+Zn)at.%] showed n-type conductive behavior in spite of N atoms exceeding that Al dopants, indicating N-related acceptors still inactive. crystalline structure was obviously correlated with contents eventually evolved into an amorphous for film doping level...

An interfacial buffer layer has been developed to improve the silicon oxide (SiOx) hard coating adhered a flexible plastic substrate through consecutive plasma-enhanced chemical vapour deposition process, using same organosilicon precursor. The adhesion of structure, correlated with thickness, was rated by standard tape-peeling test. excellent (rank 5B) available for structure an deposited on polycarbonate and polymethylmethacrylate substrates. degree strength structures measured scratch...

We studied the Hall-effect mobility of pentacene films prepared by thermal evaporating method with different substrate temperature. A crossover from coherent bandlike charge transport mobilities up to several tens cm2/V-s at low temperature an incoherent hopping motion high is observed. The carrier exhibit a hopping-to-band transition around room An exhibition 90 °C attributed increased spacing between molecules.

A transparent cosputtered ITO–ZnO film was used as an ohmic contact electrode to the n-type ZnO layer. The resistance of ITO–ZnO/n-ZnO system optimized by a rapid thermal annealing (RTA) treatment. Through x-ray diffraction and Auger electron spectroscopy depth profile measurements, achievement on attributed outdiffusion oxygen atoms at layer surface, which favourable for increase carriers. By contrast, mechanism responsible degradation due significant zinc also resulted in marked peak shift...

Crystalline structures, intrinsic stress, and surface roughness of piezoelectric ZnO films deposited on sapphire substrates by rf magnetron sputtering sequential post-annealing treatments were investigated X-ray diffraction (XRD) atomic force microscopy (AFM) measurements. The power used O2/(Ar+O2) gas ratio greatly affected the crystallinity film. A c-axis preferred orientation with superior was achieved at a specific flow ratio. In addition, original stress also markedly released...

We prepare a zinc oxide‐ (ZnO‐) based Schottky diode constructed from the transparent cosputtered indium tin (ITO‐) ZnO ohmic contact electrode and Ni/Au metal. After optimizing property removing ion‐bombardment damages using dilute HCl etching solution, hydrogen peroxide (H 2 O ) ammonium sulfide (NH 4 S x solutions, respectively, are employed to modify undoped layer surface. Both of barrier heights with surface treated by these two evaluated current‐voltage ( I ‐ V capacitance‐voltage C...

Silicon-containing thin films were synthesized from a tetramethylsilane (TMS)–oxygen gas mixture by plasma-enhanced chemical vapour deposition to modify the surface properties of flexible plastic substrate. The wettability was strongly correlated with presence hydrocarbon- and hydroxyl-related bonds in films. inorganic Si–O–Si networks deposited film, originating an additional oxygen reactant glow discharge, significantly increased substrate hardness. Surface uniformity SiOx film varied...

The relationship between the electrical, optical and material properties of transparent conductive oxide films prepared by rf cosputtering indium–tin (ITO) zinc (ZnO) targets has been investigated. evolution from polycrystalline structure an undoped ITO film to amorphous-like ZnkIn2O3+k obtained ZnO-doped is found be responsible for marked improvement in electrical properties. A low surface roughness also achieved this amorphous structure. However, both property uniformity begin degrade with...

(Al + N)‐codoped p ‐type zinc oxide (ZnO)/undoped n ZnO homojunction structure was deposited onto Si (100) substrate by using radio frequency (rf) magnetron cosputtering system. Transparent indium tin (ITO)‐ZnO cosputtered film employed as the ohmic contact electrode to film, and specific resistance optimized 2.9 × 10 −6 Ω cm 2 after treating a rapid thermal annealing (RTA) process at 400°C for 5 min under vacuum ambient. The behavior between metallic Ni/Au ‐ZnO also improved 3.5 −5 300°C 3...

X-ray diffraction coupled with atomic force microscopy measurements were employed to investigate the cosputtered oxide films at various zinc content [Zn∕(Zn+In)at.%] ratios prepared room temperature using rf cosputtering indium tin (ITO) and (ZnO) targets simultaneously. The crystalline structure of a pure ITO film is polycrystalline obvious peaks (222) (400). As ratio reaches 26%, evolves from into an amorphouslike ZnkIn2Ok+3 structure. This also dominates raging 26% 54%. formation...

The gas barrier property of a silicon oxide (SiOx) film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS)-oxygen mixture was modified by introducing ammonia in glow discharge. change discharge with incorporation monitored an optical emission spectrometer (OES). Structures, bond configurations, and material properties resulting films were investigated. introduced TMS-oxygen plasma resulted lines dominated N2 CN species suppression OH oxygen-related...

The effect of ultraviolet irradiation on the electrical property poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films was examined. It is shown that carrier mobility increases while density does not change substantially. in PEDOT:PSS samples exhibits strong temperature dependence, indicating dominance tunneling (hopping) at low (high) temperatures. results demonstrate changes chemical structure may lead to modification electron-phonon coupling, thus...

In this work, the surface morphology of a hydrophobic organosilicon film was modified as it deposited onto silver seed layer with nanoparticles. The hydrophobicity evaluated by water contact angle significantly increased from 100° to 128° originating becoming roughened, and deeply relevant Ag conform deposition. addition, became oleophobic improved due formation inactive C-F chemical on after carbon tetrafluoride glow discharge etching. oleophobicity could be further optimized oleic angles...