A5055565196- Thermal properties of materials
- Graphene research and applications
- Advanced Thermoelectric Materials and Devices
- Thermal Radiation and Cooling Technologies
- Molecular Junctions and Nanostructures
- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Advanced ceramic materials synthesis
- GaN-based semiconductor devices and materials
- Solar Thermal and Photovoltaic Systems
- Advancements in Battery Materials
- ZnO doping and properties
- Solar-Powered Water Purification Methods
- Machine Learning in Materials Science
- Semiconductor materials and devices
- Thermal Expansion and Ionic Conductivity
- High-pressure geophysics and materials
- Aluminum Alloys Composites Properties
- Numerical methods in engineering
- Quantum and electron transport phenomena
- Ga2O3 and related materials
- Nuclear Materials and Properties
- Thermodynamic and Structural Properties of Metals and Alloys
- Nanopore and Nanochannel Transport Studies
- Quantum Dots Synthesis And Properties
Shandong Institute of Advanced Technology
2022-2025
Shandong Academy of Sciences
2022-2025
Institute of Solid State Physics
2019-2024
Chinese Academy of Sciences
2019-2024
The University of Tokyo
2020-2022
South China Normal University
2020-2022
Nantong University
2021
Shanghai Jiao Tong University
2014-2021
Carnegie Mellon University
2018-2021
Hefei Institutes of Physical Science
2019
Ultrafast water permeation in aquaporins is promoted by their hydrophobic interior surface. Polytetrafluoroethylene has a dense fluorine surface, leading to its strong repellence. We report series of fluorous oligoamide nanorings with diameters ranging from 0.9 1.9 nanometers. These undergo supramolecular polymerization phospholipid bilayer membranes form nanochannels, the walls which are densely covered atoms. The nanochannel smallest diameter exhibits flux that two orders magnitude greater...
Thermal conductance at interface with weak van der Waals bonding can become larger than that strong covalent bonding.
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the industry. However, its hole mobility is relatively low dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that can be efficiently enhanced via slight compressive shear strain along [100] direction, while improvement [111] direction marginal. This impressive distinction attributed to deformation...
Due to the high intrinsic thermal conductivity, carbon nanotubes are very promising serve as effective interface materials for microelectronics or other cooling applications. However, performance of nanotube based material is strongly limited by small contact area and weak bonding at interface. Here, we propose a junction structure that bonded with monolayer graphene, which could potentially enhance conductance. Molecular dynamics simulations show conductance can be enhanced least 40%...
Phonon surface scattering is of great importance for understanding thermal transport in nanostructured materials and has been widely utilized to tailor properties. However, the current phonon largely based on Ziman's formula which was derived at continuum limit scalar wave equation and, thus, ignoring atomistic information surface. In this work, we applied wave-packet simulations study impact amorphization roughness reflection. We found that both types surfaces, energies specularly reflected...
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical thermal transport properties.However, enhancing the performance of GaN-based power electronics relies on heavy doping.Previous studies showed that electron-phonon interactions have strong effects lattice conductivity GaN Fröhlich interaction.Surprisingly, our investigation reveals weak n-type at ultra-high electron concentrations impact interaction can be...
Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies have shown that higher-order phonon–phonon scattering extremely strong effects on the lattice thermal conductivity (κlat) 2D-GaN, with fourth-order interatomic force constants (4th-IFCs) calculated using experienced atomic displacement finite difference method. In this work, it found 4th-IFCs 2D-GaN are...
One way to reduce the lattice thermal conductivity of solids is induce additional phonon–surface scattering through nanostructures. However, in which phonons interact with surfaces, especially at atomic level, not well understood present. In this work, we perform two-dimensional atomistic wave-packet simulations investigate angular-resolved phonon reflection a surface. Different surface morphologies, including smooth periodically rough and surfaces amorphous coatings, are considered. For...
Despite the importance of physical understanding interfacial thermal conductance (G) for metal/graphene (Gr)/dielectric interfaces, there exists a large discrepancy regarding role dielectric substrates in transport across graphene interfaces previous studies. In this work, we experimentally investigate impact on metal/Gr/dielectric through accurately measuring G various Al/Gr/dielectric over temperature range 80–300 K, using both standard time-domain thermoreflectance (TDTR) and differential...
4H-silicon carbide (4H-SiC) possesses a high Baliga figure of merit, making it promising material for power electronics. However, its applications are limited by low hole mobility. Herein, we found that the mobility 4H-SiC is mainly strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates applying compressive strain can reverse sign crystal-field splitting and change ordering electron bands close to valence band maximum. Therefore,...
Proper consideration of anharmonicity is important for the calculation thermal conductivity. However, how influences conduction in amorphous materials still an open question. In this work, we uncover role on conductivity silica ($a\text{\ensuremath{-}}{\mathrm{SiO}}_{2}$) by comparing predicted from harmonic theory and anharmonic theory. Moreover, explore effect anharmonicity-induced frequency shift prediction It found that calculated recently developed (quasi-harmonic Green-Kubo...
Abstract The successful exfoliation of atomically-thin bismuth telluride (Bi 2 Te 3 ) quintuple layer (QL) attracts tremendous research interest in this strongly anharmonic quasi-two-dimensional material. thermal transport properties material are not well understood, especially the mode-wise and when it is coupled with a substrate. In work, we have performed molecular dynamics simulations normal mode analysis to study mode-resolved freestanding supported Bi QL. detailed phonon calculated...
A series of InGaN/GaN multiple quantum wells (MQWs) was grown by metalorganic chemical vapor deposition with different well thickness. High-resolution x-ray diffraction studies revealed that the In composition is increasing along growth direction from bottom to top each layer in these MQWs. While at almost keeps constant, rate becomes obviously larger when temperature decreased. The important conclusion this study MQWs shaped like a triangle due layer. emission mechanism has be discussed...
P-TRANS is a software to simulate phonon transport in arbitrary nanostructures based on the Boltzmann theory. The core part of Monte Carlo ray-tracing solver that uses stochastic method sample various nanostructures. written FORTRAN with well-organized modules and utilizing OpenMP MPI parallelization achieve high performance. can handle typical calculation feature size ∼1000 nm normal PC within seconds, which useful when exploring wide variety structures, for instance structural optimization...