Taojian Wu

ORCID: 0000-0002-4532-0847
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About
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Research Areas
  • Silicon and Solar Cell Technologies
  • Semiconductor materials and interfaces
  • Thin-Film Transistor Technologies
  • Nanowire Synthesis and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • solar cell performance optimization
  • Advanced battery technologies research
  • Supercapacitor Materials and Fabrication
  • Advancements in Battery Materials

Sun Yat-sen University
2022-2024

Shanghai Jiao Tong University
2021-2024

Solar Energy Research Institute of Sun Yat-sen University
2024

Southwest Jiaotong University
2019

Combining electron- and hole-selective materials in one crystalline silicon (Si) solar cell, thereby avoiding any dopants, is not considered for application to photovoltaic industry until only comparable efficiency stable performance are achievable. Here, it demonstrated how a conventionally unstable electron-selective contact (ESC) optimized with huge boost stability as well improved electron transport. With the introduction of Ti thin film between a-Si:H(i)/LiF Al electrode, high-level...

10.1002/advs.202202240 article EN cc-by Advanced Science 2022-06-15

Abstract Crystalline silicon solar cells with regular rigidity characteristics dominate the photovoltaic market, while lightweight and flexible thin crystalline significant market potential have not yet been widely developed. This is mainly caused by brittleness of wafers lack a solution that can well address high breakage rate during fabrication. Here, we present reinforced ring (TSRR) structure, which successfully used to prepare free-standing 4.7-μm 4-inch wafers. Experiments simulations...

10.1038/s41467-024-48290-5 article EN cc-by Nature Communications 2024-05-07

Dopant‐free heterojunction (HJ) solar cells are known for their simple process conditions and low parasitic absorption. However, stability issues remain one of the major obstacles further development with transition metal oxides (TMOs). Therefore, this research demonstrates mechanism thermal annealing degradation effects on TMOs/silicon (Si) HJ, namely, infiltration oxygen from air bidirectional diffusion TMOs, by investigating a typical molybdenum oxide (MoO x )/Si contact. A dense Au...

10.1002/solr.202300849 article EN Solar RRL 2024-04-01

Specific contact resistance ( ρ C ) plays a significant role in determining the efficiency of dopant‐free heterojunction (DFHJ) silicon solar cells. Existing methods allow accurate measurement only majority carrier collection region. Herein, taking heterojunctions transition metal oxide/c‐Si(n) as an example, how to extract from minority (hole) region by ingeniously using expanded Cox and Strack method is demonstrated. On basis technology computer‐aided design double (diode + resistance)...

10.1002/solr.202100394 article EN Solar RRL 2021-11-26

Dopant-free passivating contacts have the potential to be deposited at low costs while exhibiting excellent electrical performance for photovoltaic devices. However, one significant issue of such a technology is unsatisfactory environmental stability compared conventional doped-silicon contacts. Herein, we present strategy improving and properties typical electron-selective (ESCs) with i-a-Si:H/LiF/Al stack by inserting thermally evaporated thin metal films as protective layers....

10.2139/ssrn.4355136 article EN 2023-01-01

Crystalline silicon solar cells dominate the photovoltaic market nowadays. However, they are rarely used in self‐powered systems (with an operating voltage of 1.5∼12.0 V) mainly because low integration cell modules, which need slicing and then series connection. Herein, a series‐interconnected can be prepared on monolithic wafer, with capability to output high by controlling number sub‐cells, is proposed. Further, based technology computer aided design (TCAD) numerical simulation, in‐depth...

10.1002/solr.202200188 article EN Solar RRL 2022-04-20
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