A5101658882- Thin-Film Transistor Technologies
- ZnO doping and properties
- Energy Load and Power Forecasting
- Radio Frequency Integrated Circuit Design
- Integrated Energy Systems Optimization
- Semiconductor materials and devices
- Building Energy and Comfort Optimization
- High voltage insulation and dielectric phenomena
- High-Voltage Power Transmission Systems
- Advanced Thermodynamic Systems and Engines
- Advanced Chemical Physics Studies
- HVDC Systems and Fault Protection
- Power Systems Fault Detection
- Power Transformer Diagnostics and Insulation
- Microwave Engineering and Waveguides
- Millimeter-Wave Propagation and Modeling
- Advancements in Semiconductor Devices and Circuit Design
- Thermodynamic and Exergetic Analyses of Power and Cooling Systems
- Refrigeration and Air Conditioning Technologies
- Mass Spectrometry Techniques and Applications
- Electrohydrodynamics and Fluid Dynamics
- Combustion and flame dynamics
- Microbial bioremediation and biosurfactants
- Geothermal Energy Systems and Applications
- Magnetic Field Sensors Techniques
Hefei National Center for Physical Sciences at Nanoscale
2024
University of Science and Technology of China
2023-2024
Zhejiang University
2015-2024
State Grid Corporation of China (China)
2018-2024
Hangzhou Wanxiang Polytechnic
2022-2023
Tianjin University
2022-2023
Anhui University of Technology
2023
Henan University of Science and Technology
2023
Northeast Electric Power University
2023
Tianjin University of Technology
2022
In this work, three-dimensional porous Ni–Co layered double hydroxide nanosheets are vertically decorated on N-doped reduced graphene oxide <italic>via</italic> a simple one-step microwave-assisted hydrothermal process.
Mesoporous zinc germanium oxynitride was synthesized by a template-free method at high temperature. Through optimizing redox potentials as well improving crystallinity, this material showed enhanced activity in CO(2) photoreduction.
A bond wire antenna/feed for use near 60 GHz is demonstrated. gold with ~1-mil diameter co-optimized a pad to resonate at ~60 GHz. With metal cover representing an enclosure electronic system (2 mm from printed circuit board), the antenna pair gain 10-cm separation ~ -53 dB including effects of two nearby wires located 300 ¿m away. This sufficient building interchip 1-Gbps radio link bit error rate 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Marine environments contain diverse halogenated organic compounds (HOCs), both anthropogenic and natural, nourishing a group of versatile organohalide-respiring bacteria (OHRB). Here, we identified novel OHRB (Peptococcaceae DCH) with conserved motifs but phylogenetically reductive dehalogenase catalytic subunit (RdhAs) from marine enrichment culture. Further analyses clearly demonstrate the horizontal gene transfer rdhAs among OHRB. Moreover, 2,4,6-trichlorophenol (TCP) was dechlorinated to...
As the improvement of district heating systems, fine-tuning operational equipment has become a promising direction. However, in practical relying solely on manual control and existing basic models, dynamic hydraulic-thermal process is hard to cover. Consequently, primary side current system mainly results over or under-supply substations. This article constructs model performs balanced operation strategies optimization based model. The linearization iterative are adopted simplify hydraulic...
Transparent radio frequency identification (RFID) integrated circuits based on ZnO thin film transistors were developed by using ratioed logic gates with depletion loads. The fabrication of these employed a simple deuterium plasma treatment to adjust the threshold voltages load transistors. Inverters realized full swing (0.02 ~ 4.99V), high gain -48V/V, large noise margin, and small area. RFID such exhibited ultra-low power dissipation 8.28 μW at supply voltage 2.4 V considerably data rate...
The transparent floating gate memory based on zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by using one-step atom layer deposition of aluminia tunneling and ZnO charge-trap layers. Free electrons trapping mechanism this device is proposed after systematical investigation voltage scanning thickness the layer. Furthermore, relationship between geometrical size charge-trapping window explored. devices with different windows can be controlled simply designing area their without...
A simple compatible process is developed to fabricate NAND flash memory and driving logic circuits simultaneously based on atomic layer deposition zinc oxide thin film transistors (ZnO TFTs), in which the active floating gate both are ZnO films. The exhibits excellent properties, including large window (9.8 V), long retention performance even multi-level data (2 bits) writing reading ability. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
An 80-GHz six-stage common source tuned amplifier has been demonstrated using low leakage (higher V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) NMOS transistors of a 65-nm digital CMOS process with six metal levels. It achieves power gain 12 dB at 80 GHz 3-dB bandwidth 6 GHz, noise figures (NF's) lower than 10.5 frequencies between 75 and 81 the lowest NF 9 dB. IP xmlns:xlink="http://www.w3.org/1999/xlink">1</sub>...
The identification and analysis of quantum state-specific effects can significantly deepen our understanding detailed photodissociation dynamics. Here, we report an experimental investigation on the vibrational state-mediated OCS+ cation via A2Π1/2 (ν1 0 ν3) states by using velocity map ion imaging technique over photolysis wavelength range 263–294 nm. It was found that electronically excited S+ product channel S+(2Du) + CO (X1Σ+) enhanced when ν1 ν3 modes were excited. Clear deviations in...
The theory of oxygen vacancy related deep energy defects and valence band offset (VBO) between gate insulator channel codetermining the threshold voltage shift (ΔVTH) ZnO thin film transistor under negative bias illumination stress (NBIS) is proposed investigated systematically. Two kinds transistors are fabricated by atomic layer deposition with different oxide structures, a control sample Al2O3 an improved SiO2/Al2O3 structures. Among two devices, device achieves smaller ΔVTH NBIS SiO2...
This letter presents a 77-GHz low-conversion-loss (CL) fourth-harmonic mixer based on the substrate-integrated suspended line (SISL) platform. Based traditional stub-type harmonic mixing structure, we add several additional transmission lines, which will participate in impedance matching of diode together with stubs to reduce CL. A 3-D electromagnetic (EM) model is established for accurate simulation at millimeter-wave frequency. The presented SISL was fabricated by low-cost printed circuit...
A new method is proposed to improve the stability performance of zinc oxide (ZnO) thin-film transistors (TFTs) by reducing density oxygen vacancies and enlarging valance band offset (VBO) between channel/insulator simultaneously. At first, ozone (O3) used as oxidant during atomic layer deposition (ALD) ZnO reduce its from 22.64% 14.32%, compared with H2O, resulting in less shift threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The urban energy system is greatly dependent on the District Heating System (DHS). However, many difficulties with regulation and control are caused by its large scale numerous coupling variables. Additionally, reliance manual experience means it can be challenging to guarantee heating comfort effectiveness in of DHS. This paper proposes a data-driven temperature response prediction model predict secondary loop supply based substation’s historical operating status, valve opening degree,...
AbstractWe reported an experimental and theoretical study on the promotion role of F doping in improved catalytic performance fluorinated graphene(F-GO) for ammonium perchlorate (AP) pyrolysis. F-GO was prepared by using graphite oxide (GO) as carbon sources CF3COOH fluorinating agent. Compared with other samples, F-GO-180 highest amounts, more C-F semi-ionic covalent bond amounts exhibit superior performance, 10 wt% catalyst added AP, exothermic peak temperature proceeded just one step even...
A CMOS heterodyne receiver integrating a phase-locked loop that includes bulk of transmitter functions for W-band pulsed radar is realized using low leakage transistors cost 65-nm process with 5 thin and 1 thick metal layers used to manufacture cell phone RFIC's. The peak conversion gain 7 dB the minimum NF 10.8 between 78 88 GHz in measurement. entire front-end consumes ~190 mW.
The application of doubly salient electromagnetic machine(DSEM) to more electric aircraft starter/generator system has broad prospects. And the are extremely demanding on operational reliability, which is mainly determined by operating stability system. Therefore, DSEM's fault-tolerant control technology plays a significant role in improving reliability for aircraft. At present, researches DSEM mostly focus design body structure. There few studies operation under excitation fault. In this...