A5022400356- Advanced MEMS and NEMS Technologies
- Acoustic Wave Resonator Technologies
- Semiconductor materials and devices
- Mechanical and Optical Resonators
- Nanowire Synthesis and Applications
- Force Microscopy Techniques and Applications
- Electrostatic Discharge in Electronics
- Silicon Nanostructures and Photoluminescence
- Diamond and Carbon-based Materials Research
- Conducting polymers and applications
- Ferroelectric and Piezoelectric Materials
- 3D IC and TSV technologies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Thin-Film Transistor Technologies
- Advanced Surface Polishing Techniques
- GaN-based semiconductor devices and materials
- Ferroelectric and Negative Capacitance Devices
- Silicon and Solar Cell Technologies
- Copper Interconnects and Reliability
- Electronic and Structural Properties of Oxides
- Adhesion, Friction, and Surface Interactions
- Electrical and Thermal Properties of Materials
- TiO2 Photocatalysis and Solar Cells
- Metal and Thin Film Mechanics
National and Kapodistrian University of Athens
2012-2021
In the present work, we effectively modify TiO2 electron transport layer of organic solar cells with an inverted architecture using appropriately engineered porphyrin molecules. The results show that optimized modifier bearing two carboxylic acids as anchoring groups and a triazine electron-withdrawing spacer significantly reduces work function TiO2, thereby reducing extraction barrier. Moreover, lower surface energy porphyrin-modified substrate in better physical compatibility between...
An improved method to study the long term discharge current through dielectric film in microelectromechanical system capacitive switches is presented. The allows detection of currents sub-fempto-Ampere range by monitoring decay bias for minimum capacitance pull-up state. has been applied time interval excess 10 000 s. Finally, it shown that carefully designed devices calculation arises from charge fluctuation decay.
The paper attempts to elaborate on the basic problem of dielectric charging in insulating films for microelectromechanical capacitive switches, dependence film electrical properties material stoichiometry and uncertainty whether implementation a leaky would reduce effects. Silicon nitride with stoichiometries (N/Si) ranging from 0.36 0.85 were assessed metal-insulator-metal capacitors using thermally stimulated depolarization current method by obtaining current-voltage characteristics....
Effective interface engineering has been shown to play a vital role in facilitating efficient charge-carrier transport, thus boosting the performance of organic photovoltaic devices. Herein, we employ water-soluble lacunary polyoxometalates (POMs) as multifunctional interlayers between titanium dioxide (TiO2) electron extraction/transport layer and photoactive film simultaneously enhance efficiency, lifetime, photostability polymer solar cells (PSCs). A significant reduction work function...
Dielectric charging is a major reliability issue preventing commercialisation of RF MEMS capacitive switches. To date two modes have been considered as responsible for the dielectric films in MEMS. The one takes place during pull‐down state and therefore it called contacted or injection charging, whereas second occurs when bridge still up referred to contactless induced charging. Experimental results supporting charge an additional mechanism switches are presented.
This paper discusses the mechanisms responsible for charging of plasma enhanced chemical vapor deposition (PECVD) silicon nitride films used in fabrication RF microelectromechanical (MEMS) switches. Nitride deposited at different temperatures are characterized order to better understand effect conditions on material stoichiometry and stress. Both MEMS switches metal-semiconductor-metal capacitors with PECVD as dielectric layer were fabricated their examined. Measurements indicate that arises...
The present paper investigates the effect of stressing bias magnitude and time on discharging process in MEMS capacitive switches. calculation discharge current through dielectric film is based monitoring rate shift for up-state minimum capacitance. data analysis shows that lies range femto-Amperes calculated constant depends directly window observation conditions. Moreover reveals an increase trapped charge remains bulk very long as increases. dominant process, taking place under intrinsic...
This letter examines the effect of dielectric material stoichiometry and substrate temperature on charging performance reliability capacitive MEMS switches with silicon nitride. Various stoichiometries were obtained by varying deposition gas flow ratios during PECVD process. Results from both MIM capacitors have shown that is mitigated in nitride films deposited at 150 °C a high ratio nitrogen to content (N/Si = 0.98).
A method that allows the investigation of discharge transport mechanism in dielectric films used MEMS capacitive switches or MIM capacitors even bare is presented. The based on monitoring film surface top electrode potential decay rate and dependence conductivity potential. has been applied MIMs with simultaneously deposited to confirm closeness data devices. impact non-uniform charging local different stoichiometry also assessed. Finally, effect leakage due environment humidity...
The present paper investigates the effect of temperature on charging process in dielectric films MEMS capacitive switches. investigation includes assessment MIM capacitors and data analysis shows that is thermally activated can be described by a system with wide distribution relaxation times exhibits power-law relaxation. activation energies obtained from are attributed to different charge collection mechanisms.
This paper presents the electrical assessment and modeling of discharge process in RF MEMS capacitive switches with nanocrystalline diamond dielectric film. The is performed by taking into account detailed dc characterization film at different temperatures aid metal–insulator–metal (MIM) capacitors fabricated on same die. model assumes screening trapped charges through carriers that are injected from bottom electrode, transported grain boundaries redistributed across surface sp2 state...
The electrical properties of gold nanorods nanostructured silicon nitride films are comprehensively investigated with the aid metal–insulator–metal capacitors and RF MEMS capacitive switches. Different nanorod diameters densities were grown on bottom electrode orientation normal to dielectric film surface. A simple physical model, which does not take effect electric field fringing into account, was developed describe both DC low frequency properties. It has been shown that distribution...
Diamond films are considered as superior dielectric in comparison to Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> for MEMS applications. The present paper provides a detail characterization study of electrical properties undoped microcrystalline diamond involving dc and charge/discharge transient analysis over wide temperature range. aim the is provide better insight on physical...
This paper presents a systematic investigation of the effect stressing bias polarity to discharge process plasma enhanced chemical vapor deposition SiN films that have been fabricated under different conditions. Dielectric charging asymmetry has observed on utilized metal-insulator-metal capacitors and microelectromechanical systems capacitive switches, since is when negative polarization applied top electrode. In addition, it shown conditions play key issue role degree this asymmetry....