A5089574470- Multiferroics and related materials
- Ferroelectric and Piezoelectric Materials
- Dielectric properties of ceramics
- Magnetic and transport properties of perovskites and related materials
- Electronic and Structural Properties of Oxides
- Advanced Materials Characterization Techniques
- Force Microscopy Techniques and Applications
- Magnetic properties of thin films
- Surface and Thin Film Phenomena
- Advanced Condensed Matter Physics
University of Augsburg
2021-2024
Lawrence Berkeley National Laboratory
2021
Norwegian University of Science and Technology
2021
We explore the impact of a magnetic field on ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements 1.65 K, we observe modifications topologically protected structure induced by field. These alterations likely result from strain field, facilitated intergranular coupling multiferroic ErMnO3. Our findings give insights into interplay between electric and properties scale represent so far unexplored...
We report the dielectric properties of improper ferroelectric hexagonal (h-)ErMnO3. From bulk characterization, we observe a temperature and frequency range with two distinct relaxation-like features, leading to high even “colossal” values for permittivity. One feature trivially originates from formation Schottky barrier at electrode–sample interface, whereas second one relates an internal layer capacitance (BLC). The calculated volume fraction BLC (of 8%) is in good agreement observed...
The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on charge state, can exhibit unusual d.c. conduction ranging from insulating metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, synaptic devices. In contrast functional behaviors charged walls, their response alternating currents (a.c.) remains be resolved. Here, we reveal a.c. characteristics...
Abstract Rewritable nanoelectronics offer new perspectives and potential to both fundamental research technological applications. Such interest has driven the focus into conducting domain walls: pseudo‐2D channels that can be created, positioned, deleted in situ. However, study of conductive walls is largely limited wide‐gap ferroelectrics, where conductivity typically arises from changes charge carrier density, due screening accumulation at polar discontinuities. This work shows that,...
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that domain walls ferroelectrics can act as such barriers. One advantage have, comparison stationary interfaces, they be moved, offering potential of post-synthesis control constant. However, date, direct imaging how changes wall pattern cause a change constant within single sample not...
We explore the impact of a magnetic field on ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements 1.65 K, we observe modifications topologically protected structure induced by field. These alterations likely result from strain field, facilitated intergranular coupling multiferroics. Our findings give insights into interplay between electric and properties local scale represent so far unexplored...
Understanding the exotic properties of quantum materials, including high-temperature superconductors, remains a formidable challenge that demands direct insights into electronic conductivity. Current methodologies either capture bulk average or near-atomically-resolved information, missing measurements at critical intermediate length scales. Here, using superconductor Fe(Se,Te) as model system, we use low-temperature conductive atomic force microscopy (cAFM) to bridge this gap. Contrary...