A5016019125- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Advanced Fiber Optic Sensors
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Graphene research and applications
- Neural Networks and Reservoir Computing
- Photonic and Optical Devices
- Electronic and Structural Properties of Oxides
- Topological Materials and Phenomena
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
Universidade Federal de Minas Gerais
2021-2025
Massachusetts Institute of Technology
2007
An overview of an STM tip with positive and negative biases, a schematic the GeS polarization switching, thickness-dependent STS curves.
Layered materials have attracted significant attention in recent years due to the diverse electronic properties arising from different structural variations. Here, we present angle-resolved photoemission spectroscopy measurements conducted on topological material Sb4Te3. This consists of a composite stacking two distinct materials: three-dimensional (3D) insulator Sb2Te3 and two--dimensional (2D) Sb2. Our combined with density functional theory reveal that behavior exhibited by Sb2 persists,...
We describe strategies for fabricating strong-confinement microring filters and circuits, assert that techniques specifically tailored to microphotonics requirements provide a more efficient path commercialization than developed semiconductor electronics.
The prediction of semiconductor device performance is a persistent challenge in materials science, and the ability to anticipate useful specifications prior construction crucial for enhancing overall efficiency. In this study, we investigate constituents solar cell by employing scanning tunneling microscopy (STM) spectroscopy (STS). Through our observations, identify spatial distribution dopant type thin films that were designed present major p-doping germanium sulfide (GeS) dominant...
In this work, we have investigated the structural and electronic properties of Mg-doped GaAs(111) nanowires synthesized through a vapor–liquid–solid growth mechanism. The crystalline structure these was measured using synchrotron X-ray diffraction, while their addressed by scanning tunneling spectroscopy. Scanning microscopy measurements revealed that conducting Ga2Mg/Mg clusters are observed at {110} nanowire lateral surfaces, allowing electrical contacts with reduced Schottky barriers....