Qichen Zhao

ORCID: 0000-0002-4767-7970
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About
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Research Areas
  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Copper-based nanomaterials and applications
  • Nanowire Synthesis and Applications
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Semiconductor Detectors and Materials
  • 2D Materials and Applications
  • Nanofluid Flow and Heat Transfer
  • Advanced battery technologies research
  • Advanced Sensor and Control Systems
  • Perovskite Materials and Applications
  • GaN-based semiconductor devices and materials
  • Conducting polymers and applications
  • Heat and Mass Transfer in Porous Media
  • MXene and MAX Phase Materials
  • Ga2O3 and related materials
  • Solar Thermal and Photovoltaic Systems
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces
  • Advanced Memory and Neural Computing
  • Nanomaterials and Printing Technologies
  • Advanced Sensor Technologies Research
  • Semiconductor Quantum Structures and Devices

Anhui University of Technology
2025

Nanjing University of Aeronautics and Astronautics
2019-2022

Nanchang University
2020

Yunnan Normal University
2016-2018

Energy Research Institute
2016

Dalian University
2013

Perovskite solar cells (PSCs) have achieved remarkable performance advancements over the past decade. In inverted p-i-n PSCs, commonly utilized electron transport layers (ETL), such as C60 and PCBM, are associated with notable stability challenges high production costs. This study reports on a novel highly stable perovskite cell that employs iron-doped zinc oxide (FZO) nanoparticles ETL nickel (NiOx) hole layer, demonstrating power conversion efficiency (PCE) of ∼12%. comparison PSCs utilize...

10.1063/5.0246664 article EN The Journal of Chemical Physics 2025-03-04

Flexible CZTS solar cells have attracted significant attention in recent years owing to their high earth element composition and photovoltaic conversion efficiency. However, these are associated with limitations common compound thin-film cells, such as heterojunction interface combination centers, material defects, energy level mismatch. In the current study, a green simple solution spin-coating method is proposed for preparation of flexible multicycle CZTS/CCZTS absorber stacked structures...

10.1021/acsaem.2c00091 article EN ACS Applied Energy Materials 2022-03-07

Flexible Cu 2 ZnSnS 4 solar cells were doped with sodium using a novel method, which effectively facilitated carrier collection in heterojunction and demonstrated favorable bending stability.

10.1039/d1tc03957a article EN Journal of Materials Chemistry C 2021-01-01

Flexible photodetectors are considered to be extremely important flexible electronic components of the future. In this work, silicon (F-Si) substrates with inverted pyramidal light-trapping structures were prepared by wet chemistry and metal-assisted etching. Due better ability structure capture light, F-Si substrate was capable absorbing more than 90% visible light can in bending angles over 180°. On basis structures, self-powered MoO3/n-Si heterojunction (FPDs) achieve high responsivity...

10.1021/acsaelm.2c00875 article EN ACS Applied Electronic Materials 2022-08-31

The nanofluid forced convection heat exchange in a porous channel within three heated blocks was numerically investigated using the Nonorthogonal multiple-relaxation time lattice Boltzmann method (MRT-LBM). effects of various parameters such as nanoparticle volume fraction (ϕ), Darcy number (Da) on performance and flow phenomena were analyzed when Pecklel (Pe), Prandtl (Pr), porosity (ε) 25, 5.829 0.3, respectively. outcome showed that mean Nusselt (Nu) surface sources remarkably improved by...

10.1080/10407782.2020.1814590 article EN Numerical Heat Transfer Part A Applications 2020-09-11

Abstract The Cu 2 ZnSnS 4 (CZTS) thin films were fabricated by sulfurization of radiofrequency magnetron sputtered Cu–Zn–Sn–O (CZTO) precursors. Here, we extend recent works in the field fabricating CZTO precursors a new approach sputtering ZnO/Sn/Cu targets. effects one-step and two-step annealing processes applied for on structure, morphology, optical, electrical properties investigated systematically. preannealing step fundamental phase formation process was also discussed. found to...

10.1515/zna-2018-0177 article EN Zeitschrift für Naturforschung A 2018-07-31

10.1007/s10854-020-03401-y article EN Journal of Materials Science Materials in Electronics 2020-04-17

In this work, CZTSSe thin film is prepared by selenizing CZTS precursor with Sb and Sb2Se3 doping layer at the bottom. The XRD Raman results demonstrate that kesterite preferred crystalline quality prepared. XPS EDS indicate inserted atoms do not occupy lattice of CZTSSe. Both will transfer into semi-liquid phase during selenization process, which diffuses surface absorber from bottom finally volatilize elevated temperature. effectively promotes grain growth has a better than layer,...

10.1088/2053-1591/ab4bee article EN cc-by Materials Research Express 2019-10-08

Cu2ZnSnS4 (CZTS) thin films were successfully prepared by magnetron sputtering. The composition, phase structure, surface morphology and optical properties of the CZTS characterized X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) ultraviolet visible spectrophotometer (UV-VIS). result shows that: when sulfurization time was 15 minutes, atomic ratio closed to stoichiometric films, film homogeneous compacted with good uniformity. grown exhibit strong preferential...

10.12783/dteees/icepe2017/11887 article EN DEStech Transactions on Environment Energy and Earth Science 2017-07-06
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