A5024457025- GaN-based semiconductor devices and materials
- Advanced Memory and Neural Computing
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Supercapacitor Materials and Fabrication
- Ferroelectric and Negative Capacitance Devices
- Molecular Junctions and Nanostructures
- Advancements in Battery Materials
- Advanced DC-DC Converters
- Advanced Battery Materials and Technologies
- Graphene research and applications
- ZnO doping and properties
- Ga2O3 and related materials
- Conducting polymers and applications
- Neuroscience and Neural Engineering
- Quantum and electron transport phenomena
- Nanowire Synthesis and Applications
- Transition Metal Oxide Nanomaterials
- Advanced Sensor and Energy Harvesting Materials
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Battery Technologies Research
- Electrochemical sensors and biosensors
- Electrocatalysts for Energy Conversion
Xi’an Jiaotong-Liverpool University
2015-2024
Xi'an Jiaotong University
2018-2024
University of Liverpool
2008-2024
National University of Singapore
2016
Liverpool John Moores University
2008
Zhejiang University
2004
A pulse-width modulation (PWM) plus phase-shift control bidirectional dc-dc converter is proposed. In this converter, PWM and are combined to reduce current stress conduction losses, expand ZVS range. The operation principle analysis of the explained, condition derived. prototype built verify analysis.
Abstract At present, the dominating electron transport material (ETL) and hole (HTL) used in state‐of‐the‐art perovskite solar cells (PSCs) are tin oxide 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenyl‐amine)‐9,9′‐spirobifluorene (Spiro‐OMeTAD). However, surface hydroxyl groups of SnO 2 layer Li + ions within Spiro‐OMeTAD HTL generally cause charge recombination migration, significantly reducing devices' performance stability. Here, a molecule bridging 3,5‐bis(fluorosulfonyl)benzoic acid (FBA) is...
An appropriate electron transport layer (ETL) with better energy alignment and enhanced charge transfer, thereby helping efficient extraction of photogenerated carriers, is essential to achieve the creation high-performance devices. In this work, we use functionalized MXene modified fluoroalkylsilane dodecyltrimethoxysilane molecules, denoted as SnO2-MF SnO2-MH, nanosheet dopants in SnO2 ETL. From density functional theory (DFT) calculations ultraviolet photoelectron spectra (UPS) spectra,...
We have measured the single-molecule conductance of 1,n-alkanedithiol molecular bridges (n = 4, 6, 8, 10, 12) on a graphene substrate using scanning tunneling microscopy (STM)-formed electrical junctions. The values this homologous series ranged from 2.3 nS to 53 4), with decay constant βn 0.40 per methylene (-CH2) group. This result is explained by combination density functional theory (DFT) and Keldysh-Green function calculations. obtained decay, which much lower than one for symmetric...
A facile and environmentally friendly fabrication is proposed to prepare nitrogen-doped hierarchical porous activated carbon via normal-pressure popping, one-pot activation nitrogen-doping process. The method adopts paddy as precursor, KHCO3 dicyandiamide the safe activating agent nitrogen dopant. as-prepared presents a large specific surface area of 3025 m2·g−1 resulting from synergistic effect dicyandiamide. As an electrode material, it shows maximum capacitance 417 F·g−1 at current...
Emerging optical synapses with in‐memory computing sensor (IMCS) performance are considered to be one of the most effective candidates circumvent bottleneck current Von Neumann structure while developing neuromorphic systems higher effectiveness and lower energy consumption. Biomimetic properties IMCS in function form indicate requirements for utilized functional materials, such as stronger sensitivity dissipation. Because high optical‐sensitivity efficiency excellent electrical...
Sleep staging is a key method for assessing sleep quality and diagnosing disorders. However, current deep learning methods face challenges: 1) postfusion techniques ignore the varying contributions of different modalities; 2) unprocessed data can interfere with frequency-domain information. To tackle these issues, this paper proposes gated multimodal temporal neural network multidomain data, including heart rate, motion, steps, EEG (Fpz-Cz, Pz-Oz), EOG from WristHR-Motion-Sleep SleepEDF-78....
The effect of cerium doping on the dielectric properties hafnium dioxide is reported. Thin films cerium-doped oxide Cex–Hf1−xO2 (x=0.10,0.17,0.34) have been grown by liquid injection atomic layer deposition. After annealing at 900 °C, all were transformed from an amorphous state into a stabilized cubic or tetragonal phase. As-deposited Ce0.1–Hf0.9O2 showed low hysteresis voltages and negligible flat band voltage shifts. to form crystalline phase, relative permittivity (κ) increased 25 32 100...
Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments 25 °C. The displayed typical bipolar resistive switching characteristics. Investigations carried out on the effect different annealing for associated RRAM show that performance correlated changes hydroxyl group concentration AlOx thin films....
This paper presents a GaN based synchronous buck DC-DC converter, which monolithically integrates gate drivers and half-bridge power stage in 3-μm enhancement-mode (E-mode) GaN-on-Si process. The fabricated converter with integrated is on E-mode MIS-HFETs (metal-insulator-semiconductor heterojunction-field-effect-transistors), have large swing of 10 V due to the insertion 20 nm high-k insulator Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Power integration is essential for the fully utilization of advanced GaN devices in power conversion applications due to reduced parasitic inductance, low on-state resistance, and high-temperature operation. This paper presents a GaN-based monolithic design with optimized gate drivers DC–DC converters. Four different are experimentally evaluated boost converters based on enhancement (E)-mode AlGaN/GaN metal–insulator–semiconductor heterojunction-field-effect-transistors (MIS-HFETs). The...
This article reports the Au-free GaN power integration platform and a complete scheme from devices to functional subcircuits application-oriented converter ICs. The design experimental demonstration of all-GaN dc-dc IC with high level is presented. Through developed platform, are monolithically integrated demonstrated, which have realized expected functions feasible for high-level integration. high-side gate driver, pulse-width modulation (PWM) feedback controller, overcurrent protection...
This article demonstrates the integrated comparators, hysteresis and sawtooth generators based on aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The circuits (ICs) exhibit thermal stability from 25 °C to 250 in both static transient performances. threshold voltage ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) depletion (D)-mode MIS-HEMT is...
Biomass materials with representative morphologies and compositions were employed to study the activation effect of KHCO3. As time increased from 1 3 h, products derived puffed rice pleurotus eryngii achieved a hierarchical porous structure, while cotton still presented microporous structure. In electrochemical test three-electrode system, specific capacitance these was 352, 319, 216 F g−1, respectively. two-electrode PR-2-based symmetric supercapacitor 280.7 g−1 at 0.5 A energy density...
Novel normally-OFF AlGaN/GaN MIS-high electron mobility transistors (HEMTs) with a ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> charge trapping layer are proposed. The deposition of the on partially recessed AlGaN in conjunction Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate dielectric has been accomplished. developed MIS-HEMTs exhibit threshold voltage 1.55 ± 0.4 V...
The radiation response of four different high-k materials has been investigated by irradiating them using a 979 MBq Cs137 γ-ray source and dose absorption rate 0.71rad(Si)∕s. Acceptorlike electron traps donorlike were observed in HfO2 ZrO2 metal-oxide-semiconductor capacitors originating from radiation-induced defects. A lower density donor-like created LaAlO3 NdAlO3 capacitors, but both hole trapping play role shifting the flat band voltage. hardness thin films is similar to thermal SiO2...
AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion applications. In order to realize converter circuit control function and overcurrent protection of device itself, we designed, fabricated, experimentally-measured the Au-free MIS-HEMTs with embedded current sensing structure. A floating ohmic electrode is inserted between source gate which voltage signal can represent drain current. We...