A5026711954- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- ZnO doping and properties
- Quantum and electron transport phenomena
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- 3D IC and TSV technologies
- Silicon Carbide Semiconductor Technologies
- Copper-based nanomaterials and applications
- Semiconductor Quantum Structures and Devices
- Context-Aware Activity Recognition Systems
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Mechanical and Optical Resonators
- Molecular Junctions and Nanostructures
- Surface and Thin Film Phenomena
- IoT-based Smart Home Systems
- Photonic and Optical Devices
- Energy Efficient Wireless Sensor Networks
- Integrated Circuits and Semiconductor Failure Analysis
- IoT and Edge/Fog Computing
- Quantum-Dot Cellular Automata
Nanjing University of Science and Technology
2025
Hankyong National University
2015-2024
Central South University
2024
Anhui Xinhua University
2024
Jianghan University
2022
Dong-Eui University
2003-2019
Beijing Institute of Technology
2015
Hokkaido University
2012
University of Cambridge
2012
Chungbuk National University
2012
Pure and Mg doped ZnO thin films were deposited at 400 °C on glass substrates by pulsed laser deposition. An x-ray diffractometer (XRD) was used to investigate the structural properties of films. It is found that all have a preferred (002) orientation. The peak position orientation shift from 34.39° 34.55°. lattice constants also obtained XRD data. that, with increase dopant concentration, constant decreases 3.25 3.23 Å, c 5.20 5.16 Å. From spectrophotometer transmittance data, band gap...
Metastasis and metabolic disorders contribute to most cancer deaths are potential drug targets in treatment. However, corresponding drugs inevitably induce myeloid suppression gastrointestinal toxicity. Here, we report a nonpharmaceutical noninvasive electromagnetic intervention technique that exhibited long-term inhibition of cells. Firstly, revealed optical radiation at the specific wavelength 3.6 μ m (i.e., 83 THz) significantly increased binding affinity between DNA histone via molecular...
Falls are a serious medical and social problem among the elderly. This has led to development of automatic fall-detection systems. To detect falls, algorithm that combines simple threshold method hidden Markov model (HMM) using 3-axis acceleration is proposed. apply proposed wearable device been designed produced. Several fall-feature parameters introduced applied method. Possible falls chosen through two types HMM distinguish between fall an activity daily living (ADL). The results...
Student performance is crucial for addressing learning process problems and also an important factor in measuring outcomes. The ability to improve educational systems using data knowledge has driven the development of field mining research. Here, this paper proposes a machine method prediction student based on online learning. critical thought that eleven behavioral indicators are constructed according process, following that, through analyzing correlation between scores obtained by students...
In this study, the possibility of compact modeling in single-electron circuit simulation has been investigated. It is found that each Coulomb island circuits can be treated independently when interconnections between transistors are large enough and a quantitative criterion for condition given. also demonstrated that, those situations, SPICE macromodeling used efficient simulation. The developed macromodel produces results with reasonable accuracy orders magnitude less CPU time than usual...
Monolithic 3D ICs (M3D) are an emerging technology that offers ultra-high-density integration due to the extremely small size of monolithic inter-tier vias. We explore various design styles available in M3D and present techniques obtain GDSII-level signoff quality results for each these styles. also discuss challenges facing style provide solutions them.
An L-shaped tunnel field-effect transistor (LTFET) employs an overlapped gate/channel/source architecture to maximize band-to-band tunneling (BTBT) area. The channel is very thin and suffers from the geometrical quantum confinement effect (QCE). analysis of QCE in LTFET has been shown significantly affect BTBT LTFET. As a consequence QCE, conduction band becomes discrete set energy subbands, whereas valence source continuous. discretization reduces drain-source current (I <sub...
On the basis of 2-D potential analysis performed while taking into account effective conducting path effect, a new analytical model for threshold voltage in cylindrical surrounding-gate MOSFETs (SGMOSFETs) that contain localized charges is presented. From Poisson's equation based on parabolic approximation, simple and accurate expression derived. The proposed validated using 3-D device simulator, good agreement obtained various dimensions charge distributions. This can be used to investigate...