A5006397481- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Copper-based nanomaterials and applications
- Analytical Chemistry and Sensors
- Iron oxide chemistry and applications
- Ga2O3 and related materials
- Catalysis and Oxidation Reactions
- Mechanical and Optical Resonators
- Cloud Computing and Resource Management
- GaN-based semiconductor devices and materials
- Distributed and Parallel Computing Systems
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Advanced Thermoelectric Materials and Devices
- Photocathodes and Microchannel Plates
- Silk-based biomaterials and applications
- Machine Learning in Materials Science
- Advanced Chemical Sensor Technologies
- Low-power high-performance VLSI design
- Transition Metal Oxide Nanomaterials
- Electronic and Structural Properties of Oxides
- Magnetic Field Sensors Techniques
- Computational Drug Discovery Methods
- Antimicrobial Peptides and Activities
Tel Aviv University
2016-2023
IBM Research - Haifa
2023
Bar-Ilan University
2014-2016
Alzheimer's Association of Israel
2014-2015
A combinatorial solar cell device library approach is presented to investigate TiO<sub>2</sub>–Cu<sub>2</sub>O hetero-junction cells with different back contacts.
Abstract Native silk fibroin (NSF) is a unique biomaterial with extraordinary mechanical and biochemical properties. These key characteristics are directly associated the physical transformation of unstructured, soluble NSF into highly organized nano‐ microscale fibrils rich in β‐sheet content. Here, it shown that this fibrillation process accompanied by development intrinsic fluorescence visible range, upon near‐UV excitation, phenomenon has not been investigated detail to date. optical...
For the past several decades, there is growing demand for development of low-power gas sensing technology selective detection volatile organic compounds (VOCs), important monitoring safety, pollution, and healthcare. Here we report homologous alcohols different functional groups containing VOCs using electrostatically formed nanowire (EFN) sensor without any surface modification device. Selectivity toward specific VOC achieved by training machine-learning based classifiers calculated changes...
Pulsed laser deposition (PLD) is widely used in combinatorial material science, as it enables rapid fabrication of different composite materials. Nevertheless, this method was usually limited to small substrates, since PLD on large substrate areas results severe lateral inhomogeneity. A few technical solutions for problem have been suggested, including the use designs masks, which were meant prevent inhomogeneity thickness, density, and oxidation state a layer, while only composition allowed...
The electrical properties of metal oxides play a crucial role in the development new photovoltaic (PV) systems. Here we demonstrate general approach for determination and analysis these thin films oxide based PV materials. A high throughput scanning system, which facilitates temperature dependent measurements at different atmospheres highly resistive samples, was designed constructed. instrument is capable determining conductivity activation energy values relatively large sample areas, about...
The evolution of nanotechnology based sensors has enabled detection ultra-low-level concentrations target species owing to their high aspect ratio. However, these have a limited dynamic range at room temperature characterized by saturation in the sensor response following certain concentration exposure. In this work, we show that towards gas can be significantly enhanced using electrostatically formed nanowire sensor. size and shape conducting channel are defined tuned controlling bias...
In the current work, pristine α-Fe2O3 metal oxide was doped with Mg in an attempt to modulate its electronic properties. To this end, we employed experimental high throughput strategy, including scanning XRD and optical spectroscopy, which were complimented by atomistic density functional theory (DFT) calculations. The combined study reveals that at Mg/Fe atomic ratios up ∼1/3, bandgaps of hematite-Mg composite materials are similar pure material. observed rationalized band structure states...
The ability to control surface-analyte interaction allows tailoring chemical sensor sensitivity specific target molecules. By adjusting the bias of shallow p-n junctions in electrostatically formed nanowire (EFN) sensor, a multiple gate transistor with an exposed top dielectric layer tuning fringing electric field strength (from 0.5 × 107 2.5 V/m) above EFN surface. Herein, we report that magnitude and distribution this correlate intrinsic response volatile organic compounds. local...
This paper reports a novel low voltage power (LVLP) temperature sensor with 300-370K operating range based on silicon-on-insulator (SOI) nanowire FET (NWFET) standard SOI CMOS technology. The design combines top-down silicon and an electrostatically formed (EFN) capacitively coupled to back-gate electrode. A surface charged nitride layer is used deplete the upper part of nanowire, while controls size location nanowire. device operates in regime similar subthreshold transistor features very...
A novel electrostatically formed nano-wire (EFN) transistor for temperature sensing is presented. The device a silicon-on-insulator multigate field-effect transistor, in which nanowire-shaped conducting channel vertical position and area are controlled by the bias applied to back gate, two junction-side gates. Our measurements depict sensitivity of 7.7%/K EFN transistors among best reported values semiconductor devices TMOS FET's. Optimal operational voltage biases currents regimes evaluated...
Electrostatically formed nanowire (EFN) transistor is a majority carrier silicon-on-insulator (SOI) device, operated in the depletion mode, with conducting channel size and position modulated by surrounding gates. When subthreshold regime, EFN an efficient temperature sensor. We present novel design top gate, named gate-all-around (GAA EFN), allowing increased sensitivity. The new enables formation of conductive volume SOI device layer, far from bottom silicon/oxide interfaces, thus reducing...
This article reports on the high-temperature (HT) operation (25 °C–400 °C) and temperature sensing mechanism of a depletion-mode AlGaN/GaN metal–insulator–semiconductor (MIS) high-electron-mobility transistor (depletion mode (D-mode) MIS-HEMT) in GaN Si technology. Our measurements simulations show that high sensitivity device is governed by traps at GaN-cap/Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N...
A product-ready L2 cache (L2C) design based on 6T ultra-dense SRAM cells with novel circuits capable of boosting word-line, cell, and, bit-line supplies independently using single supply and metal coupling capacitance is demonstrated for the first time in 5nm technology. short detection circuit provided to increase robustness design. Hardware data shows that L2C operates a minimum 0.57V reaches maximum operating frequency 1.9GHz at 1.1V.
The combinatorial approach to all oxide material and device research is based on the synthesis of hundreds related materials in a single experiment. This requires development new tools rapidly characterize these libraries techniques analyze resulting data. presented here intended make contribution towards meeting this demand, thereby advance pace research. In many cases photovoltaic determinations are well-suited for high throughput methodologies, enabling direct quantitative analysis...
Abstract We present the design of a H 2 gas sensor based on palladium (Pd) decorated silicon-on-insulator (SOI) nanowire field effect transistor (FET) with standard SOI complementary metal-oxide-semiconductor fabrication process, where top Pd layer plays dual role catalyst and surrounding metal gate. A numerical study was conducted simplified steady-state model to describe sensing mechanism in dry air at 300 K. The simulation is dissociative adsorption surface formation dipole Pd/SiO...
According to the Fowler theory and numerous experiments quantum efficiency for photoemission from conductors increases with temperature. Here we show that an opposite temperature dependence is also possible, when quasi-metallic surface accumulation layers of n-type semiconductors. This due Fermi level energy in The decreasing temperature; this leads a decrease semiconductor work function consequently increase at constant value absorbed light quanta energy. We have calculated effect electron...
Abstract This paper presents a novel micro-bolometer structure based on SOI gate all around Electrostatically Formed Nanowire (GAA EFN) transistors. The new design enables formation of the EFN conductive channels in volume devices layers, far from top and bottom silicon/oxide interfaces, thus reducing noise level increasing temperature sensitivity to 13.3%/K. Detailed electrical thermal simulations show that has an effective responsivity 1.95 × 10 3 A/W, equivalent power 561 fW, difference 8...