Ijaz A. Rauf

ORCID: 0000-0002-5191-5855
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About
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Research Areas
  • ZnO doping and properties
  • Thin-Film Transistor Technologies
  • Copper-based nanomaterials and applications
  • Transition Metal Oxide Nanomaterials
  • Electron and X-Ray Spectroscopy Techniques
  • Gas Sensing Nanomaterials and Sensors
  • X-ray Spectroscopy and Fluorescence Analysis
  • Computational Physics and Python Applications
  • Chalcogenide Semiconductor Thin Films
  • Advanced Electron Microscopy Techniques and Applications
  • Ion-surface interactions and analysis
  • Copper Interconnects and Reliability
  • Surface Roughness and Optical Measurements
  • Optical Coatings and Gratings
  • Metal and Thin Film Mechanics
  • Safety Warnings and Signage
  • Ga2O3 and related materials
  • Microstructure and Mechanical Properties of Steels
  • Advancements in Battery Materials
  • Surface and Thin Film Phenomena
  • Quantum Mechanics and Applications
  • Near-Field Optical Microscopy
  • Metallurgy and Material Forming
  • Electronic and Structural Properties of Oxides
  • Phenothiazines and Benzothiazines Synthesis and Activities

York University
2017-2024

National Institute for Biotechnology and Genetic Engineering
2017

University of Alberta
1997-1999

University of Cambridge
1991-1996

Queen's University
1995

University of the Punjab
1988

The microstructure and electrical properties of tin-doped indium oxide thin films crystallized under the action a temperature gradient are compared with those prepared uniform temperature. This zone-confining process, coupled slow deposition rates, causes preferential segregation dopants from grains growing at lower temperatures toward grain boundaries located higher Recrystallization within chain or zone on line equal these to be oriented in same direction. separating twin boundaries....

10.1063/1.361882 article EN Journal of Applied Physics 1996-04-15

10.1016/0167-577x(93)90110-j article EN Materials Letters 1993-12-01

Nucleation of crystals within an amorphous phase can be induced using electron beam irradiation in microscope. In contrast to generally believed two-step transformation involving nucleation and growth, we observe a three-step transformation: stage followed by the growth process. The two steps are: formation basic crystalline skeleton diffusion excess defects periphery skeleton.

10.1063/1.2998256 article EN Applied Physics Letters 2008-10-06

10.4172/2161-0398.1000e129 article EN Journal of Physical Chemistry & Biophysics 2015-01-01

The adoption of artificial intelligence (AI) in healthcare is rapidly expanding, transforming areas such as diagnostics, drug discovery, and patient monitoring. Despite these advances, public perceptions AI healthcare, particularly Canada, remain underexplored. This study investigates the relationship between Canadians' knowledge, comfort, trust AI, focusing on key sociodemographic factors like age, gender, education, income.

10.1016/j.puhe.2024.11.019 article EN cc-by Public Health 2024-12-18

The need of controlling infectious microbes has increased in the past years due to resistance microorganisms towards antimicrobial agents as a result changes their cellular membrane proteins, ionic channels, and cell surface receptors.Scientists are working best offer such an agent that could prove practical harmful pose threats lives people.This review focuses on information about modes actions some recently discovered, approved or used by scientific laboratories pharmaceutical companies...

10.4172/2153-0645.1000171 article EN Journal of Pharmacogenomics & Pharmacoproteomics 2017-01-01

We discuss here the theoretical calculations for resistivity as a function of carrier density based on dominant ionized impurity scattering mechanism and compare experimental data with lower limit. Our values are below limit homogeneous distribution donors.

10.1088/0022-3727/27/5/030 article EN Journal of Physics D Applied Physics 1994-05-14

10.11159/ehst19.113 article EN Proceedings of the International Conference of Energy Harvesting, Storage, and Transfer 2019-06-01

10.1016/0956-716x(94)90202-x article EN Scripta Metallurgica et Materialia 1994-03-01

A simple process for improving texture and electrical mobility of polycrystalline films is described. The technique involves annealing the film in a controlled temperature gradient produces chainlike structures impurity-free grains; dopants other defects are confined to grain boundaries. diffusion impurities, as well self-diffusion host lattice, combing effect causes reorientation annealed films. sheet conductance increases with increasing but attains an optimum value, above which falls due...

10.1063/1.368294 article EN Journal of Applied Physics 1998-08-15

Materials scientists have struggled for a while to find process which can be used engineer individual grain boundaries separating two adjacent grains. Considerable effort has also been devoted finding technique that control the orientation of A temperature gradient applied during chemical vapor deposition thin copper films provides an effect such chains grains oriented in same direction are produced at chosen positions film. As result interaction between defect migration and crystal growth,...

10.1063/1.120043 article EN Applied Physics Letters 1997-10-20

Abstract Three aspects of radiation damage are concern to electron microscopists: changes in crystallographic or molecular structure, mass loss and change chemical composition. Structural can be monitored from the fading diffraction patterns fine structure an energy-loss spectrum. Total loss, form a reduction inelastic-scattering power, observed low-loss Mass also ionization edges, with advantage that particular elements studied separately. It is possible assign characteristic dose De for...

10.1017/s1431927600024120 article EN Microscopy and Microanalysis 1998-07-01

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study effect of dopant atoms on neighbouring lattice. Ideally Sn a substitutional at random sites. The difference valence (Sn 4+ replaces In 3+ ) requires that an extra electron donated lattice and thus contributes free carrier density. But since adjacent member same row periodic table, ionic radius (In : 0.218 nm; 0.205 nm) will introduce strain Free waves no longer see perfect be...

10.1017/s042482010017671x article EN Proceedings annual meeting Electron Microscopy Society of America 1990-08-01
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