An analysis of throughput in a cluster tool with dual-blade robot operating steady-state mode is presented. The based on single-wafer serial processing tool. Two types schedules are distinguished, called transport-bound and process-bound schedules. In schedule changes process times do not affect the tool, denotes maximum achievable schedule, time predominates effect throughput. indicates that improves over single-blade under conditions. Under conditions, would need to double speed robot,...

A new rapid process for the growth of thin thermal oxide films on crystalline silicon is described. This oxidation (RTO) performed in a controlled oxygen ambient with heating provided by tungsten-halogen lamps. The resulting oxides thicknesses from 40-130 Å have uniformity better than 2 percent across 75-mm wafers. Oxidation times at 1150°C vary 5 to 30 s. Typical breakdown fields 100-Å were 13.8 MV/cm and typical midgap interface state densities order 1 × 10 <sup...

Fresnel zone plate (FZP) lens antenna, consisting of a set alternative transparent and opaque concentric rings arranged on curvilinear or flat surfaces, have been widely used in various fields for sensing communications. Nevertheless, the state-of-art FZP antennas are limited to single band due frequency-dependent feature, which hinders their use multi-band applications. In this work, shared aperture dual-band metalens antenna is proposed by merging two single-band operating at distinct...

Controlling the wavefront and manipulating polarization of electromagnetic wave using an ultrathin flat device are highly desirable in many emerging fields. To shape between two decoupled orthogonal circular states, that is, right-hand (RCP) left-hand (LCP), most state-of-the-art metasurfaces (MSs) combine propagation phase Pancharatnam-Berry into meta-atoms. This article proposes a different strategy to fully decouple LCP RCP control their wavefronts independently. By taking advantage...

Abstract Arbitrarily manipulating the polarization and wavefront of electromagnetic waves using ultrathin highly efficient devices is desirable for many systems. Ultrathin broadband polarization‐insensitive transmissive metasurfaces, which can achieve same conversion shaping arbitrary linearly polarized incident waves, are proposed. The meta‐atom composed a transmitting antenna receiving with group phase delay lines connecting them. rotation introduces conversion, different lengths...

This paper presents a few single-substrate multi-metal layer antennas using additively manufactured electronics (AME) solution based on piezoelectric additive fabrication. By vertically stacking metal layers in 3D printed single substrate, the designed antenna prototype exhibits advantages of wide bandwidth and ultra-low profile. For proof-of-concept, multi-layer linear polarization (LP) patch elements 2 × LP arrays are designed, fabricated, measured. It verifies that feeding network can be...

This article presented an additively manufactured bandpass filter (BPF) based on a second-order stub-loaded resonator consisting of multimetal layer components. The proposed BPF is fabricated by low-temperature (140°) electronics (AME) solution that can fabricate conductive and dielectric materials simultaneously with multimetal-layer flexible interlayer distance. By reducing the distance, constant inductance capacitance be realized in smaller sizes, which helps to achieve device...

Current flow through Pt/(Ba0.7Sr0.3)TiO3/Pt stack consists of both polarization current and electronic leakage current, which were separated by monitoring the discharging when applied voltage was turned off. Electronic comes from electrical field enhanced Schottky emission at electrode–dielectric interface, dominates high electric field. At low field, prevails. The time dependence can be modeled a distribution Debye-type relaxations. relaxation capacitance derived current–time measurements...

The effects of high-temperature ammonia nitridation on the SiO/sub 2/-Si system have been studied. Unlike previous studies which focused exclusively dielectric properties, this work explores possible underlying silicon. Initial results indicate that introduces nitrogen into silicon over a depth approximately 60 nm. Schottky diode and AC surface photovoltage measurements show boron-doped nitrogen-rich has n-type characteristics may be nitrogen-oxygen donor related. device n- p-MOSFETs using...

The gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown (TDDB) in nitrided reoxidized silicon dioxides prepared by rapid thermal processing (RTP) is reported. Charge during high-field injection can be reduced nitridation for both substrate injection. While reoxidation oxides shows further reduction injection, degradation observed Similar effects are TDDB: show charge-to-breakdown excess 300 C/cm/sup 2/ but less than 30 These related to the nitrogen...

The electrical characteristics of thin nitrided thermal silicon dioxide films prepared by a new rapid process are described. This is performed in controlled gas ambient under an incoherent photon flux with duration typically less than 60 s. It allows the incorporation nitride layer bulk (oxinitride), on surface, or at interface oxide. Gate dielectrics superior and chemical properties have been obtained. Applications metal-oxide-semiconductor integrated circuit technologies suggested.

The reactive ion etching (RIE) of silicon nitride (Si3N4) films formed by low pressure chemical vapor deposition (LPCVD), has been investigated. Studies were done using plasmas CHF3, CHF3+O2, and CHF3+CO2 gases. Anisotropic profiles with vertical sidewalls no undercut have achieved all three plasmas. etch rate the Si3N4 in a pure CHF3 plasma was found to decrease as function time. This effect is explained via mass transport limiting mechanism. Constant rates observed CHF3+O2 CHF3+CO2. A...

The emissivity of silicon wafers in a rapid thermal processing chamber has been measured as function the wafer temperature. Wafers with different surface roughness and layers have studied. For transparent wafers, both sides affect emissivity. This is not only affected by roughness, but also deposited on wafer. It observed that while increases rapidly temperature from its room value to 600 °C, decreases slope −8.89×10−5 °C−1 for temperatures larger than °C.

This article discusses the design and performance of planar capacitors built as pairs conductive plates by additive manufacturing part an electronic circuit board. covers several geometries layers parallel that allow for different capacitance values, from a few picofarads (pF) to nanofarads (nF). The dc, ac, radio frequency (RF) characterization demonstrated superior compared off-the-shelve surface mount device (SMD) up 20 GHz. additively manufactured exhibit breakdown voltages in excess 1...

The scalability from 75 to 150 mm silicon wafers of a new oxidation process is discussed. This based on rapid thermal processing (RTP) in controlled oxygen ambient with heating provided by tungsten-halogen lamps, temperature monitored via an optical pyrometer and computer. Silicon dioxide films thicknesses the range 45 400 Å were obtained at 1150 °C, uniformity 1.5% across wafer wafer, independent size. Electrical characteristics show typical breakdown fields 15 MV/cm for 100 statistical...

A fully-integrated additive manufacturing (AM) approach for microwave devices is presented in this work. The applied AM technology can print the circuit models simultaneously with conductive and dielectric materials. Taking advantage of one-stop 3D technology, multilayer board vias or holes be prototyped rapidly precisely. electrical properties ink material are measured up to 40 GHz using a quasi-optical cavity test system. To further demonstrate merit an infilled-ground transmission line,...

An inductively coupled plasma (ICP) source is used to produce an ion metal (IMP) in the PVD chamber which has excellent directionality. Compared collimated titanium liners electrical results of 0.3 /spl mu/m contact and via structures processed with IMP deposited show significantly improved parametrics. Due high bottom coverage deposition process a substantial reduction liner thickness possible. Plasma damage studies using MOS capacitor connected large antennae no differences leakage...

Submicrometer gate length MESFET logic on silicon-on-sapphire (SOS) has been explored for very high-speed switching. The measured values length, current drive capability, transconductance, output conductance, pinchoff voltage, and knee voltage are 0.65 µm, 0.11 A/cm, 200 mS/cm, 5.6 -1 V, respectively. Time-dependent two-dimensional simulation methods based realistic models doping profiles, high field transport, interfaces have used analysis. sensitivity of the device characteristics also...

The electrical and structural characteristics of thin nitrided thermal oxides prepared by rapid nitridization (RTN) have been studied. Nitridization times vary between 3 s 5 min in an ammonia ambient. Films characterized using Auger, ellipsometry, C-V I-V techniques. RTN allows to form surface nitridized (NO), surface-interface (NON), oxinitrides. effective refractive index varies 1.45 1.7. Catastrophic breakdown voltages are up time higher than oxides. Optically electrically determined...

The electrical characteristics of thin gate implated MOS channels grown by Rapid Thermal Processing (RTP) have been investigated. RTP is defined here to include Oxidation (RTO) and subsequent Annealing (RTA). Silicon dioxide films analyzed using ellipsometry, capacitance-voltage (C-V), current-voltage (I-V) charge-to-breakdown (Q <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BD</inf> ) techniques. RTO allows the growth oxide with thicknesses...

Electrical properties of GaAs single-gate and dual-gate MESFET's with gate lengths 1.2 µm 0.2 have been compared. By reducing the length to µm, a very high zero-gate-bias drain current I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dss</inf> large increase in pinchoff voltage were observed both devices, shorter FET was found be close full channel current. Only slight improvement maximum intrinsic g...

The emissivity of silicon wafers determine the temperature control in closed loop rapid thermal processing (RTP) systems. Silicon surface roughness, doping, and layers affect intrinsic wafer emissivity, while RTP chamber walls reflectance reduces amplitude these effects. For temperatures below 600V, device side topography also wafer. Narrow band wide pyrometers show similar behavior with respect to on wafer, as indicated by experimental modeling techniques.