A5002889915- Silicon Nanostructures and Photoluminescence
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Luminescence and Fluorescent Materials
- Advanced Chemical Sensor Technologies
- Luminescence Properties of Advanced Materials
- Silicon and Solar Cell Technologies
- Plant-Microbe Interactions and Immunity
- Transition Metal Oxide Nanomaterials
- Polymer Nanocomposite Synthesis and Irradiation
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and interfaces
- Glass properties and applications
- Nanoparticles: synthesis and applications
- Electronic and Structural Properties of Oxides
- Diamond and Carbon-based Materials Research
- Nonlinear Optical Materials Studies
- Copper-based nanomaterials and applications
Belarusian State University
2014-2023
Institute of Applied Physics
2017-2022
Abstract Zinc blende ZnO nanocrystals (NCs) were synthesised in amorphous silica by high-fluence dual (Zn, O) ion implantation and subsequent thermal annealing air. We observed the formation of core/shell nanoparticles at depth maximum Zn concentration as a result an incomplete oxidation process. The matrix with NCs exhibits intense white-greenish emission. Low-temperature photoluminescence spectroscopy revealed various radiative recombination mechanisms zinc involving intrinsic defects that...
Samples of SiO 2 (600 nm)/Si have been implanted with Sn ions (200 keV, <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mn>5</mml:mn><mml:mo>×</mml:mo><mml:msup><mml:mrow><mml:mn>10</mml:mn></mml:mrow><mml:mrow><mml:mn>16</mml:mn></mml:mrow></mml:msup><mml:mtext> </mml:mtext><mml:msup><mml:mrow><mml:mtext>cm</mml:mtext></mml:mrow><mml:mrow><mml:mo>−</mml:mo><mml:mn>2</mml:mn></mml:mrow></mml:msup></mml:math> and...
Using oxide compositions is a promising method of increasing the sensitivity and selectivity semiconductor gas sensors on basis SnO 2 , In O 3 WO other oxides. We have studied nanocrystalline tungsten (WO ), indium (In cobalt (Co 4 ) mixed with different /In /Co ratios synthesized using sol-gel after xerogel annealing at 400–600 °C. The morphology, phase composition structure materials been X-ray diffraction, infrared spectroscopy, scanning electron microscopy transmission microscopy. showed...
The two triple-layered SiO 2 /SiN x /SiO structures with Si-rich and N-rich silicon nitride active layer were fabricated on p -type Si-substrates by chemical vapour deposition. SiN of different composition ( = 0.9 1.4) was obtained changing the ratio SiH Cl /NH 3 flow rates during deposition a (8/1 1/8, respectively). spectroscopic ellipsometry photoluminescence (PL) measurements showed that refractive index, absorbance luminescence properties depend layers. layers emit in red (1.9 eV) blue...
Abstract The phase-structural composition of silica films grown on Si substrates implanted with different fluences Zn ions has been studied using transmission electron microscopy (TEM) and diffraction. Small clusters (2–3 nm) larger (5–7 were formed in the as-implanted concentration 6–8 at % 16%–18%, respectively. Furnace annealing 750 °С for two hours air resulted formation an orthorhombic 2 SiO 4 phase (space group R-3) case low fluence (5 × 10 16 cm −2 ) a zinc blended ZnO F-43m) high (1...
In this work we used the method of "hot" implantation zinc and selenium ions into SiO2 / Si structures in combination with subsequent heat treatment order to form nanosized phases. Implantation modes for ionic synthesis chosen such a way that concentration embedded impurity is maximum approximately at middle thickness dielectric layer. For clustering impurity, it necessary create high implanted depth profile. The computer stimulation select was carried out using SRIM- 2013 program. Also...
Two triple-layered SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiN xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /SiO structures with Si-rich and N-rich silicon nitride active layers were fabricated on p-type Si-substrates by chemical vapour deposition. The different stoichiometry of SiNx layer (x = 0.9 × 1.4) was obtained changing the ratio SiH Cl /NH xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> flow rates during...
The light-emitting properties of Si-rich silicon nitride films deposited on the Si (100) substrate by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) have been investigated. In spite similar stoichiometry (SiN 1.1 ), fabricated different techniques emit in spectral ranges. Photoluminescence (PL) maxima lay red (640 nm) blue (470 range for PECVD LPCVD SiN films, respectively. It has shown that equilibrium furnace annealing laser ruby (694 nm, 70 ns) affect PL...
This paper presents the results of electrical and optical measurements 600 nm thick silicon dioxide on Si layers to which zinc ions have been implanted.Following ion implantation samples were annealed in air at 1023 K for 2 h.For immediately after preparation being annealed, AC resistivity Rp, phase angle θ , capacity Cp, dielectric loss factor tanδ made as a function frequency (measurement range 50 Hz-5 MHz) measurement temperature (20 K-375 K).On this basis, frequency-temperature...
Fire blight of fruit crops causes great economic damage to production, most severely affecting on apples and pears. The causative agent, Erwinia amylovora is quarantine concern in a number countries the world, moreover disease has wide geographic distribution: cases E. defeat have been recorded more than 40 countries. Specific bacteriophages can serve as biological control method fire epiphytotics. aim study was create collection bacteriophages, potential agents for controlling crops....
The phase-structural composition of a silica film grown on Si substrate implanted with Zn ions at room temperature different fluences has been studied using transmission electron microscopy and diffraction. small clusters (1–2 nm) the large (5–7 have formed in as-implanted films concentration 6–7 % 16–18 %, respectively. Furnace annealing 750 °С for two hours results both formation orthorhombic 2 SiO 4 phase (space group R-3) case low fluence (5 · 10 16 cm –2 ) cubic ZnO F-43m) high (1 17 )....
This paper presents the results of AC electrical measurements Zn-SiO2/Si nanocomposites obtained by ion implantation. Implantation Zn ions was carried out into thermally oxidized p-type silicon substrates with energy 150 keV and fluence 7.5 × 1016 ion·cm-2 at a temperature 773 K, is thus called implantation in "hot" conditions. The samples were annealed ambient air for 60 min 973 K. Electrical before after annealing. Measurements performed range from 20 K to 375 measurement parameters...
Till now, shape elongation phenomenon was observed predominantly for metal nanoparticles irradiated with swift heavy ions (SHI). For the first time, we report of InAs and Zn(core)/ZnO(shell) (NPs) embedded in a silica matrix Xe ions. In case NPs, SHI irradiation results formation nanorods. A diversity elongated features is Zn-based NPs: chains small ZnO clusters, (Zn)core/(ZnO)shell structures drop-like Zn particles. The intense sputtering silicon dioxide layer due to electronic excitations...