Victor El-Homsy

ORCID: 0000-0002-5826-4127
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About
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Research Areas
  • Quantum and electron transport phenomena
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Magnetic properties of thin films
  • Semiconductor Quantum Structures and Devices
  • Photonic and Optical Devices
  • Physics of Superconductivity and Magnetism
  • Near-Field Optical Microscopy
  • Analog and Mixed-Signal Circuit Design
  • Advanced Electron Microscopy Techniques and Applications
  • Quantum Computing Algorithms and Architecture

Institut Néel
2022-2024

Institut polytechnique de Grenoble
2022-2024

Centre National de la Recherche Scientifique
2022-2024

Université Grenoble Alpes
2022-2024

Pauli-spin-blockade (PSB) measurements have so far achieved the highest fidelity of spin readout in semiconductor quantum dots, overcoming 99% threshold. Moreover, contrast to energy-selective readout, PSB is less error prone thermal energy, an important feature for large-scale architectures that could be operated at temperatures above a few hundreds millikelvins. In this work, we use rf reflectometry on single-lead dot perform charge sensing and probe state double 0.5 K. At relatively...

10.1103/prxquantum.3.040335 article EN cc-by PRX Quantum 2022-12-26

For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in post-CMOS process study physics of these devices achieve proof concepts. Once...

10.48550/arxiv.2303.04960 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Scalability is one of the biggest advantages silicon spin qubits over other platforms, making them very promising candidates in quest for quantum computing. In this work we approach regime interest large-scale qubit integration, showing that can deliver high electrostatic coupling control and individual tunability an array dots (QDs). To do use FDSOI devices fabricated with 2-metal gate levels industry-compatible CMOS process. We operate at 100mK, a dot-configuration where large on tunnel...

10.1109/esscirc55480.2022.9911381 article EN ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) 2022-09-19

Spins in semiconductor quantum dots hold great promise as building blocks of processors. Trapping them SiMOS transistor-like devices eases future industrial scale fabrication. Among the potentially scalable readout solutions, gate-based dispersive radiofrequency reflectometry only requires already existing transistor gates to a dot state, relieving need for additional elements. In this effort towards scalability, traveling-wave superconducting parametric amplifiers significantly enhance...

10.48550/arxiv.2307.14717 preprint EN cc-by arXiv (Cornell University) 2023-01-01

We demonstrate singlet-triplet readout and parity allowing to distinguish T0 the polarized triplet states. achieve high fidelity spin with an average above $99.9\%$ for a time of $20~\mu$s $99\%$ $4~\mu$s at temperature $0.5~K$. initialize singlet state in single dot higher than separate two electrons while keeping same $a \approx 95.6\%$ fidelity.

10.48550/arxiv.2207.10523 preprint EN cc-by arXiv (Cornell University) 2022-01-01
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