A5100703340- Radiation Detection and Scintillator Technologies
- Semiconductor Lasers and Optical Devices
- Nonlinear Dynamics and Pattern Formation
- Liquid Crystal Research Advancements
- Photonic and Optical Devices
- Advanced Optical Imaging Technologies
- Advanced X-ray and CT Imaging
- ZnO doping and properties
- Nuclear Physics and Applications
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Fluid Dynamics and Thin Films
- Solidification and crystal growth phenomena
- Advanced optical system design
- Semiconductor Quantum Structures and Devices
- Luminescence Properties of Advanced Materials
- Optical and Acousto-Optic Technologies
Chinese Academy of Sciences
2015-2023
Shanghai Institute of Ceramics
2021-2023
University of Chinese Academy of Sciences
2023
Technology and Engineering Center for Space Utilization
2021
Cambridge University Press
2019
New York University Press
2019
Institute of Semiconductors
2015-2016
State Key Laboratory on Integrated Optoelectronics
2015
The paper mainly deals with theoretical investigations of the effect thickness change waveguide layers on threshold current. It is analyzed according to result a numerical simulation that asks how does shift active region position affect current for single quantum well (SQW) and double (DQW) laser diode (LD) relatively narrow waveguide. found variation trend optimum QW are different in SQW DQW LD 0.2 μm-thick waveguide, which may be due higher rate optical loss region. also terms either or...
A method for growing GaN epitaxial layer on Si (111) substrate is investigated. Due to the large lattice mismatch between and AlN, grown directly above an AlN buffer turns out be of poor quality. In this study, a transition additionally before growth. By changing growth conditions layer, we can control merging islands transfer time from 3D 2D mode. With method, crystalline quality improved crack density reduced. Here, have investigated impact stress evolution with methods X-ray diffraction,...
Abstract The development of space experiment payload for studying thermocapillary convection in the liquid bridge with large Pr number on TG-2 laboratory as well experiments are presented detail this paper, and objectives confirmed. functions analyzed, technical engineering specifications determined. Detailed designs experimental verifications performed structure columns, method bubble removing liquid, cleaning system, accurate control aspect ratio volume ratio, high-sensitivity measurement...
A new photo alignment material for fringe field switching (FFS) and in‐plane (IPS) liquid crystal display has been presented it good performance. It realizes by irradiating linearly polarized light with wavelength of 365nm. We have investigated the effect UV dosage anneal process on ability optical An excellent dark state image sticking property can be achieved optimized conditions.