A5053556041- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
University of Padua
2022-2024
We present a comprehensive review and outlook of silicon carbide (SiC) gallium nitride (GaN) transistors available on the market for current next-generation power electronics. Material properties structural differences among GaN SiC devices are first discussed. Based analysis different commercially transistors, we describe state-of-the-art these technologies, highlighting preferential conversion topologies key characteristics each technological platform. Current future fields application...
SiC power MOSFETs are reported to suffer from both positive and negative threshold voltage shifts. Positive shift is well understood in the literature attributed electron trapping near interface oxide traps (NIOTs). Negative explained by hole generation via impact ionization favored strong field. However, studies on still ongoing, origin nature of process not fully understood. This study advances comprehension investigating MOS capacitors subject bias stress. We demonstrate that: a) a...
This work improves the understanding of charge trapping in SiC MOSFETs during constant gate current stress, by presenting an analysis based on pumping measurements (constant-amplitude approach) and threshold voltage measurements. The tests were done a custom-made, on-wafer, situ monitoring setup. A non-monotonic trend for was observed each phase linked to mechanism: a) electron at near-interface oxide traps; b) hole trapping, due impact ionization oxide; c) generation traps interface. Charge...
We present a detailed investigation of charge trapping processes in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$</tex> vertical MOS capacitors, detected by means advanced capacitance measurements. The devices stressed at positive bias mechanism that results an increase the flatband voltage, while under negative voltages stored bulk and interface states is released with leftward shift C-V...
In this article, we present an analysis of the correlation between interface traps (ITs) and border (BTs) on distinctive features <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> – xmlns:xlink="http://www.w3.org/1999/xlink">V</i> curves in vertical Al <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O notation="LaTeX">$_{\text{3}}$</tex-math>...
This paper introduces a novel three-dimensional approach to model threshold voltage variation <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{\Delta} \boldsymbol{V}_{\boldsymbol{th}})$</tex> during time-dependent dielectric breakdown (TDDB) stress of SiC trench MOSFETs in wide temperature range xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{T}=\mathbf{0}\ldots \mathbf{250}{{}^{\circ}\mathbf{C}}$</tex> and studies the processes...
In this paper we present a comprehensive review and outlook of gallium nitride power devices for next-generation electronics, with focus on the emerging automotive field. The analysis different markets available GaN-on-Si HEMTs will draw state technology applications automotive, highlighting topologies their key characteristics, together comparison Si SiC. Furthermore, investigate future GaN in building blocks composing an system (power train inverter, board charger, off DC/DC converters,...