A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation resistance. Such dramatic changes are caused by the injection strongly inclined conducting ferroelectric walls, provide conduits for current flow between electrodes. Varying applied electric-field pulse, used induce switching, alters extent polarization reversal occurs; this systematically density injected walls layer and hence resistivity capacitor...

Abstract Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of ferroelectric domain walls for application in low‐dimensional systems. One most prominent features their electrical conductivity. Here, using combination scanning probe and transmission electron microscopy, mechanism tunable conducting behavior sub‐micrometer thick films technologically important LiNbO 3 explored. It found that electric bias generates stable domains with...

Recently, electrically conducting heterointerfaces between dissimilar band insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport fundamental aspects of conduction been thoroughly explored. Perhaps surprisingly, similar studies on conceptually much simpler homointerfaces, such domain walls, are not nearly so well developed. Addressing this disparity, magnetoresistance is herein reported in approximately conical 180°...

Abstract During switching, the microstructure of a ferroelectric normally adapts to align internal dipoles with external electric fields. Favorably oriented dipolar regions (domains) grow at expense those in unfavorable orientations and this is manifested predictable field‐induced motion walls that separate one domain from next. Here, discovery specific charged 90°domain copper–chlorine boracite move opposite direction expected, increasing size which polarization anti‐aligned applied field,...

Multiferroic topologies are an emerging solution for future low-power magnetic nanoelectronics due to their combined tuneable functionality and mobility. Here, we show that in addition being magnetoelectric multiferroic at room temperature, thin-film Aurivillius phase Bi6TixFeyMnzO18 is ideal material platform both domain wall vortex topology-based nanoelectronic devices. Utilizing atomic-resolution electron microscopy, reveal the presence structure of 180°-type charged head-to-head...

Ferroelectric domain wall (DW) based nano-electronics is an emerging new field of research. It only recently with advancements in electron and atomic force microscopy instrumentation that the complex nature these 2D entities can be probed. In this Research Update, advances aberration corrected scanning transmission applied to ferroelectric topological defects are summarized. We discuss sub-atomic imaging diffraction techniques used observe changes polarization, chemical composition, charge...

Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from properties of nanowires. As a relatively new family materials, MXenes are promising candidates nanowire nucleation layers capable providing simultaneous transparency and conductivity. In this work, we demonstrate direct epitaxial GaN Ti3C2 MXene films. The films consist nanoflakes spray coated onto an amorphous silica substrate. We observed relationship between due...

The exotic internal structure of polar topologies in multiferroic materials offers a rich landscape for science research. As the spatial scale these entities is often subatomic nature, aberration-corrected transmission electron microscopy (TEM) ideal characterization technique. Software to quantify and visualize slight shifts atomic placement within unit cells paramount importance due now routine acquisition images at such resolution. In previous ~decade since commercialization TEM, many...

The combination of two active Li-ion materials (Ge and Sn) can result in improved conduction paths higher capacity retention. Here we report for the first time, implementation Ge1-x Sn x alloy nanowires as anode batteries. have been successfully grown via vapor-liquid-solid technique directly on stainless steel current collectors. (x = 0.048) were predominantly seeded from Au0.80Ag0.20 catalysts with negligible amount growth was also catalyzed substrate. electrochemical performance an...

Abstract Charged domain walls (DWs) in ferroelectric materials are an area of intense research. Microscale strain has been identified as a method inducing arrays twin to meet at right angles, forming needlepoint domains which exhibit novel material properties. Atomic scale characterisation the features exhibiting these exciting behaviours was inaccessible with piezoresponse force microscopy resolution previous work. Here we use aberration corrected scanning transmission electron observe...

Electron backscatter diffraction (EBSD) is a powerful tool for determining the orientations of near-surface grains in engineering materials. However, many ceramics present challenges routine EBSD data collection and indexing due to small grain sizes, high crack densities, beam charge sensitivities, low crystal symmetries, pseudo-symmetric pattern variants. Micro-cracked monoclinic hafnia, tetragonal hafnon, hafnia/hafnon composites exhibit all such features, are used work show efficacy novel...

Ferroelectric materials, and more specifically ferroelectric domain walls (DWs) have become an area of intense research in recent years. Novel physical phenomena been discovered at these nanoscale topological polarization discontinuities by mapping out the each atomic unit cell around DW a scanning transmission electron microscope (STEM). However, identifying features requires understanding overall structure TEM sample, which is often time-consuming process. Here, fast method presented, can...

Vanadium dioxide (VO2) is an archetypal Mott material with a metal–insulator transition (MIT) at near room temperature. In thin films, this affected by substrate-induced strain but as film thickness increases, the gradually relaxed and bulk properties are recovered. Epitaxial films of VO2 on (001)-oriented rutile titanium (TiO2) relax substrate forming network fracture lines that crisscross along well-defined crystallographic directions. This work shows electronic associated these result in...

There has been a relentless pursuit of transverse electric (TE)-dominant deep ultraviolet (UV) optoelectronic devices for efficient surface emitters to replace the environmentally unfriendly mercury lamps. To date, use ternary AlGaN alloy inevitably led magnetic (TM)-dominant emission, an approach that is facing roadblock. Here, we take entirely different utilizing binary GaN compound semiconductor in conjunction with ultrathin quantum disks (QDisks) embedded AlN nanowires (NWs). The growth...

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Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies show that the configuration ferroelectric can go well beyond conventional Ising-type structure. Néel-, Bloch-, vortex-like patterns have been observed, displaying strong similarities with spin textures at magnetic walls. Here, discovery antiferroelectric in uniaxial Pb

Abstract Multiferroic topologies are an emerging solution for future low-power magnetic nanoelectronics due to their combined tuneable functionality and mobility. Here, we show that in addition being magnetoelectric multiferroic at room temperature, thin film Aurivillius phase Bi 6 Ti x Fe y Mn z O 18 is ideal material platform both domain wall vortex topology based nanoelectronic devices. Utilising atomic resolution electron microscopy, reveal the presence structure of 180˚ type charged...

Conducting domain walls (DWs) in ferroelectrics is an emerging research focus nano-electronics [1,2].Previously overlooked, these have recently been reported to possess diverse functional characteristics that are completely different from the domains they delineate [3][4][5].They can their own distinct chemistry and magnetic behavior [6], turn represent a new sheet phase.The of confined regions believed same exotic behaviours as seen 2D materials such graphene, opening up plethora possible...

Journal Article In-situ TEM Investigation of the Amorphous to Crystalline Phase Change During Electrical Breakdown Highly Conductive Polymers at Atomic Scale Get access Michele Conroy, Conroy University Limerick, Ireland Search for other works by this author on: Oxford Academic Google Scholar Kalani Moore, Moore Rob Lehane, Lehane Alonso Gamero-Quijano, Gamero-Quijano Micheal Scanlon, Scanlon Ursel Bangert Microscopy and Microanalysis, Volume 26, Issue S2, 1 August 2020, Pages 3198–3200,...

Heavy reliance on extensively studied AlGaN based light emitting diodes (LEDs) to replace environmentally hazardous mercury ultraviolet (UV) lamps is inevitable. However, external quantum efficiency (EQE) for deep UV emitters remains poor. Dislocation induced nonradiative recombination centers and poor electron-hole wavefunction overlap due the large polarization field confined stark effect (QCSE) in "Al" rich are some of key factors responsible EQE. In addition, transverse electric...

Journal Article Probing the Atomic-Scale Internal Phases with Electron Beam of Mutliferroic Domain Walls Formed During Dynamics Get access Michele Shelly Conroy, Conroy Department Materials, London Centre Nanotechnology, Henry Royce Institute, Imperial College London, UK Corresponding author: mconroy@imperial.ac.uk Search for other works by this author on: Oxford Academic Google Scholar Eoghan O'Connell, O'Connell Max Planck Institute Science Light, Erlangen, Germany Kalani Moore, Moore...