A5041029552- Silicon Carbide Semiconductor Technologies
- Surface and Thin Film Phenomena
- Superconductivity in MgB2 and Alloys
- Radio Frequency Integrated Circuit Design
- Metal and Thin Film Mechanics
- Superconducting and THz Device Technology
- Physics of Superconductivity and Magnetism
- Microwave Engineering and Waveguides
Institute of Astronomy and Astrophysics, Academia Sinica
2021-2024
The idea of ALMA Band-4+5 receivers are proposed for the upgrade after 2030. new receiver will cover RF frequency original Band-4 and Band-5 with continuous tuning over 125 –211 GHz dual polarizations, sidebands capability. instantaneous intermediate (IF) bandwidth is up to 16 per sideband polarization. Both SIS-based HEMT-based schemes considered. For SIS scheme, niobium-based junctions be fabricated form mixer chips, integrated into blocks broadband waveguide 3-dB quadrature hybrid...
Superconducting δ-NbN ultrathin film has become a key element in extremely sensitive detector applications recent decades because of its excellent electronic properties. We have realized the epitaxial growth films on (100)-oriented 3C-SiC/Si substrates by dc reactive magnetron sputtering at 760 °C with deposition rate 0.054 nm s−1. High-resolution transmission electron microscope images confirm epitaxy these films. Even thickness 1.3 (~3 unit cells), shows superconducting transition above 8...
Abstract In order to confirm the superconductivity observed in hexagonal ϵ -NbN reported recently, we have deposited NbN film on (0001) 4H-SiC substrate, with good lattice match, intentionally grow phase. The detailed structural analysis show that films are (111)-orientated δ phase dense rotational (60°) twins. Double diffraction effect selected area electron and Moiré fringes high resolution transmission microscope images existence of twins nanometer scale. growth highly twined results from...