A5063143029- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Advancements in Battery Materials
- Advanced Battery Materials and Technologies
- Metal and Thin Film Mechanics
- Photocathodes and Microchannel Plates
- Acoustic Wave Resonator Technologies
- Semiconductor materials and devices
- Advanced Battery Technologies Research
- Supercapacitor Materials and Fabrication
- Semiconductor Quantum Structures and Devices
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Nanowire Synthesis and Applications
- High-Temperature Coating Behaviors
- Advanced Condensed Matter Physics
- 2D Materials and Applications
- Advanced Photocatalysis Techniques
- Advanced Measurement and Metrology Techniques
- Extraction and Separation Processes
- Refrigeration and Air Conditioning Technologies
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Adsorption and biosorption for pollutant removal
Institute of Semiconductors
2021-2025
Guangdong Academy of Sciences
2017-2025
Collaborative Innovation Center of Chemistry for Energy Materials
2021-2024
Tan Kah Kee Innovation Laboratory
2024
Xiamen University
2014-2024
Nanjing Forestry University
2021
Central South University
2020
Sun Yat-sen University
2013-2019
Institute of Physics
2017
Chinese Academy of Sciences
2005-2017
High hole concentration was achieved in Mg-doped AlxGa1−xN (x ∼ 0.4) by using indium-surfactant-assisted delta doping method. A maximum carrier of 4.75 × 1018 cm−3 obtained, which is three times higher than that the conventionally delta-doped sample. Sheet resistivity as low 2.46 104 Ω/sq realized, benefiting from high (p). Analysis results show Mg incorporation effectively enhanced, while compensation ratio and acceptor activation energy (EA) are significantly reduced In surfactant. It also...
Abstract The practical application of lithium‐rich layered oxides is prohibited by the drawbacks such as severe capacity and voltage degradation resulting from unstable oxygen redox environment accompanied irreversible release. Herein, a facile effective strategy proposed to regulate chemistry via foreign Fe doping its induced intrinsic transition metal (TM) well in situ constructed spinel surface layer. doping, together with TM dual can stabilize lattice bulk due formed stronger FeO bond,...
A multiphase artificial interphase layer can induce homogeneous deposition of Na + and promote rapid transport . Therefore, the BiCl 3 -Na anode achieves uniform dendrite-free improves electrochemical performance.
Heteroepitaxy of high-quality AlN film is the key to advance prosperity deep-ultraviolet (DUV) devices when a large-size and low-cost native substrate unavailable. Here, we proposed strategy obtain by combining growth-mode modification with sputtered buffer using metal–organic chemical vapor deposition (MOCVD). Compared MOCVD buffer, consists smaller more uniform grains better c-axis orientation, leading in subsequent growth process. On one hand, orientation inherited upper epilayer,...
Abstract Solar-blind avalanche photodiodes were fabricated with an all AlGaN-based epitaxial structure on sapphire by metal–organic chemical vapor deposition. The devices demonstrate a maximum responsivity of 114.1 mA/W at 278 nm and zero bias, corresponding to external quantum efficiency (EQE) 52.7%. EQE improves 64.8% under bias −10 V. Avalanche gain higher than 2 × 10 4 was obtained −140 high performance is attributed the p–i–n comprised undoped Si-doped n-type Al 0.4 Ga 0.6 N quality AlN...
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, breakdown voltage, piezoelectric coefficient, thermal conductivity, hardness, corrosion resistance, chemical and stability, bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well excellent UV transparency....
It is widely believed that the lack of high-quality GaN wafers severely hinders progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal–organic chemical vapor deposition. The uniform coating layer and optimized multiple modulation guaranteed high growth...
In this Letter, the characteristics of AlGaN-based near-ultraviolet light-emitting diodes with a band-engineering last quantum barrier (LQB) were analyzed experimentally and numerically. The experimental results show that peak wavelengths UV-LEDs are around 368 nm full width at half-maximum 12-14 nm, optical electrical properties improved by using an AlxGa1-xN LQB gradually decreasing Al content. designed can reduce forward voltage from 4.35 to 4.29 V markedly enhance LOP 47.4% injection...
Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of AlGaN base layer was realized using indium surfactant-assisted Mg-delta doping method. Regrowth technique used to suppress Mg memory effect n-type emitter. The devices with a 150-μm-diameter active area exhibited bandpass spectral response between 235 and 285 nm. Dark current...
Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer.
A modified graphitic carbon nitride (CN) photocatalyst (DCN–Ni) is fabricated by stabilizing Ni species on the nitrogen vacancies of g-C 3 N 4 for improving photocatalytic H 2 generation activity.
An indium-surfactant-assisted delta doping method is reported to enhance the hole concentration and efficiency of Mg-doped p-type GaN grown by metal organic chemical vapor deposition. The increased 1.5×1018 cm-3 using this method, which 92% higher than that conventional doping. This carrier leads an improved 12%. Secondary ion mass spectroscopy reveals Mg incorporation In surfactant. Photoluminescence analysis suggests nitrogen vacancies may be suppressed induced indium....
The advantages of using an AlxGa1-xN carrier reservoir layer (CRL) instead the traditional last quantum barrier for deep-ultraviolet light-emitting diodes (DUV LEDs) were investigated. results indicate that internal efficiency is markedly enhanced and droop phenomenon alleviated. These improvements are mainly attributed to significantly hole-injection radiative recombination rate. Additionally, when Al contents CRL gradually decrease wells, a large number electrons holes reserved in region...
Hole transport control and carrier injection improvement have been demonstrated in the InGaN/GaN light-emitting diodes (LEDs) with step-stage multiple-quantum-well (MQW) structure Si-doped hole-blocking barriers. Single-wavelength emission was obtained under electrical pumping these LEDs by utilizing effect. The light around 450 nm showed a substantial increase compared reference sample single or indium-content MQWs. droop behavior wavelength stability were also improved significantly. These...
Recently, there have been increasing demands for high-quality AlN/sapphire templates due to their applications in deep ultraviolet light-emitting diodes (DUV LEDs). To acquire a low threading dislocation density (TDD), AlN films are usually thickened promote interaction. However, micro cracks easily generated when thicknesses exceed 2–3 μm, severely deteriorating device performances. In this study, we successfully fabricated 5.6 μm-thick crack-free film by employing medium-temperature (MT)...
Owing to the lack of large-diameter and affordable AlN bulk crystals, high-quality films grown on sapphire substrates have been intensively analyzed for potential applications in optoelectronic electronic devices. Herein, we successfully fabricated low-defect-density thin large-offcut-angle combining magnetron sputtering metal–organic chemical vapor deposition. It is found that crystalline qualities strongly depend densities geometric features atomic steps. When high-density zigzag...
The internal quantum efficiency (IQE) of conventional AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is seriously limited by the poor and inhomogeneous carrier injection. typical solution to optimize structure parameters p-type region active region. In this work, however, we try address issue introducing an n-type electron deceleration layer (EDL) underneath multiple wells (MQWs). On one hand, helps decrease velocity thus increase capture rate. other it can also reduce...