Semiconductor nanowire (NW) lasers provide significant potential to create a new generation of and on-chip coherent light sources by virtue their ability operate as single mode optical waveguides at the nanoscale. Due unique geometry, major benefit lies also in feasibility for direct integration on silicon (Si), enabling III–V-on-Si NW that could fuel applications interconnects data communication. In this review, we describe state-of-the-art recent progress GaAs–AlGaAs based emitting near...

We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping emission distinct s-shaped input-output characteristics, linewidth narrowing energies associated confined QWs are observed. Comparing low temperature performance QW NW laser structures having 7 coaxial a nominally identical structure only shows that threshold power density reduces...

Core-shell nanowires (NW) have become very prominent systems for band engineered NW heterostructures that effectively suppress detrimental surface states and improve performance of related devices. This concept is particularly attractive material with high intrinsic state densities, such as the low-bandgap In-containing group-III arsenides, however selection inappropriate, lattice-mismatched shell materials frequently caused undesired strain accumulation, defect formation, modifications...

Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing from individual bulk-type NWs emission tunable the near-infrared to telecommunications spectral region is, however, challenging requires low-dimensional active gain regions an adjustable band gap quantum confinement. Here, we demonstrate lasing GaAs-(InGaAs/AlGaAs) core–shell multiple InGaAs wells (QW)...

Semiconductor nanowire (NW) lasers are nanoscale coherent light sources that exhibit a small footprint, low-threshold lasing characteristics, and properties suitable for monolithic site-selective integration onto Si photonic circuits. An important milestone on the way toward novel on-chip functionalities, such as injection locking of laser emission all-optical switching mediated by optical coupling feedback, is individual, deterministically addressable NW waveguides with efficient mode...

We elucidate the role of growth parameters (III/N flux ratio, temperature TG) on morphological and structural properties, as well compositional homogeneity carrier localization effects high In-content (x(In) > 0.75) In–polar InGaN films grown by plasma–assisted molecular beam epitaxy (PAMBE). Variations in III/N ratio evidence that higher excess In yields threading dislocation densities larger inhomogeneity measured x-ray diffraction. Most interestingly, variation TG we find a...

The ability to generate phase-stabilized trains of ultrafast laser pulses by mode-locking underpins photonics research in fields, such as precision metrology and spectroscopy. However, the complexity conventional mode-locked systems has hindered their realization at nanoscale. Here we demonstrate that GaAs-AlGaAs nanowire lasers are capable emitting pairs phase-locked picosecond with a repetition frequency up 200 GHz when subject incoherent pulsed optical excitation. By probing two-pulse...

The recent integration of III-V semiconductor nanowire (NW) lasers on silicon waveguides marked a key step toward their usage as coherent light sources for future photonics applications. However, the low index contrast between semiconductors and results in weak modal reflectivity, calling improved design structures that enable both low-threshold lasing good in-coupling efficiency into waveguides. Here, we perform numerical simulations to explore how alternating refractive waveguide with thin...

Core-shell semiconductor nanowires (NW) with internal quantum heterostructures are amongst the most complex nanostructured materials to be explored for assessing ultimate capabilities of diverse ultrahigh-resolution imaging techniques. To probe structure and composition these in their native environment minimal damage sample preparation calls high-resolution electron or ion microscopy methods, which have not yet been tested on such classes ultrasmall nanostructures. Here, we demonstrate that...

A time of flight-photoemission electron microscope is combined with a single-shot stereographic above-threshold ionization phase meter for studying attosecond control electrons in tailored plasmonic nanostructures spatially and energetically via carrier-envelope tagging technique. First phase-resolved measurements gold nanoparticles on plane surface roughness from film show an apparent modulation period π. This found to originate intensity dependence the photoelectron spectra measurement...

Summary form only given. Here, we present our recent highlights on monolithically integrated GaAs-nanowire lasers silicon and further demonstrate capabilities in epitaxial gain control to tune threshold power density lasing wavelength. Importantly, the investigated NW reveal high spontaneous emission coupling factors (beta-factor) of 0.2, ultrafast temporal down <; 3 ps, equivalent repetition rates > 250 GHz. Introduction coaxial multiple-quantum wells allows density, opening a gateway for...

We present recent advances on monolithically integrated GaAs-nanowire lasers silicon, and further demonstrate epitaxial gain control to tune threshold power density lasing wavelength using low-dimensional systems. Ultimately, we also show schemes for ultrafast emission unique phase coherence properties future phase-locked lasers.

We present our recent progress in the monolithic integration and epitaxial gain control of GaAs-based nanowire (NW) lasers on Si photonic platform. First, we describe challenges realizing vertical-cavity NW SOI-based waveguides based stringent requirements for high gain, low-loss wave-guiding coupling efficiency as illustrated by detailed numerical simulations. Consequently, discuss bottom-up, schemes site-selective individual GaAs planar non-planar ridge under different geometries,...

Semiconductor nanowire (NW) lasers are nanoscale coherent light sources that exhibit a small footprint, low-threshold lasing characteristics, and properties suitable for monolithic integration onto Si photonic circuits. An important milestone on the way towards novel on-chip functionalities is of individual, deterministically addressable NW waveguides with efficient coupling mode propagation in underlying circuit. Here, we demonstrate single GaAs-based directly lithographically defined ridge...

III-V semiconductor nanowires (NW) are being considered as future coherent light sources for optoelectronic chips due to their small footprint and high refractive index. The 1D confinement also results in a natural Fabry-Perot resonance cavity. However, the most important feature is feasibility of direct growth on Si platform. research carried out this work consists time-resolved photoluminescence (TRPL) spectra at different optical excitation powers temperatures single GaAs-AlGaAs...

We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the WG is shown, with propagation distances of mode exceeding > 60 µm.

We demonstrate lasing from GaAs-InGaAs-based core-multiple quantum well nanowires with emission tunable ~0.8 to ~1.1 μm. By controlling the shell growth temperature, In-molar fraction is increased 25% without plastic relaxation. © 2019 The Author(s)

We numerically explored the coupling characteristics and critical interplay with end-facet reflectivities of nanowire lasers coupled to proximal silicon-waveguides. A proper waveguide design enables high efficiencies enhanced $\sim$ 83%. © 2019 The Author(s)

Summary form only given. Recent demonstrations of direct integration GaAs-based nanowire lasers on Si photonic circuits exhibited efficient in-coupling lasing emission to proximal waveguides - however, transmission in the waveguide suffered from high absorption losses. To overcome these issues, we develop here GaAs-(In,Al)GaAs-based with tunable longer wavelengths (>1.1 μm) by using coaxial InGaAs/AlGaAs MQW (multi-quantum well) structures as active gain media. We illustrate also sensitive...

We demonstrate lasing from GaAs-InGaAs-based core-multiple quantum well nanowires with emission tunable ~0.8 to ~1.1μm. By controlling the shell growth temperature, In-molar fraction is increased 25% without plastic relaxation.

We numerically explored the coupling characteristics and critical interplay with end-facet reflectivities of nanowire lasers coupled to proximal silicon-waveguides. A proper waveguide design enables high efficiencies enhanced ~83%.

Recent progress in III-V nanowire (NW) light sources integrated onto Si (quantum) photonic circuits is presented, illustrating key results for low-threshold vertical-cavity NW-lasers and NW-quantum emitters with efficient coupling to waveguides.